Body of Knowledge (BOK) for Copper Wire Bonds

Copper wire bonds have replaced gold wire bonds in the majority of commercial semiconductor devices for the latest technology nodes. Although economics has been the driving mechanism to lower semiconductor packaging costs for a savings of about 20% by replacing gold wire bonds with copper, copper also has materials property advantages over gold. When compared to gold, copper has approximately: 25% lower electrical resistivity, 30% higher thermal conductivity, 75% higher tensile strength and 45% higher modulus of elasticity. Copper wire bonds on aluminum bond pads are also more mechanically robust over time and elevated temperature due to the slower intermetallic formation rate - approximately 1/100th that of the gold to aluminum intermetallic formation rate. However, there are significant tradeoffs with copper wire bonding - copper has twice the hardness of gold which results in a narrower bonding manufacturing process window and requires that the semiconductor companies design more mechanically rigid bonding pads to prevent cratering to both the bond pad and underlying chip structure. Furthermore, copper is significantly more prone to corrosion issues. The semiconductor packaging industry has responded to this corrosion concern by creating a palladium coated copper bonding wire, which is more corrosion resistant than pure copper bonding wire. Also, the selection of the device molding compound is critical because use of environmentally friendly green compounds can result in internal CTE (Coefficient of Thermal Expansion) mismatches with the copper wire bonds that can eventually lead to device failures during thermal cycling. Despite the difficult problems associated with the changeover to copper bonding wire, there are billions of copper wire bonded devices delivered annually to customers. It is noteworthy that Texas Instruments announced in October of 2014 that they are shipping microcircuits containing copper wire bonds for safety critical automotive applications. An evaluation of copper wire bond technology for applicability to spaceflight hardware may be warranted along with concurrently compiling a comprehensive understanding of the failure mechanisms involved with copper wire bonded semiconductor devices

Stitch Bonding Strength of Cu Wire on AuAg/Pd/Ni Preplated Cu Leadframes: Influence of AuAg Thickness

Copper (Cu) wire bonding on the pre-plated leadframes with Ni/Pd/AuAg plating has been applied extensively in the semiconductor industry for the interconnection of integrated-circuit (IC) packaging due to the lower material cost of Cu and its excellent electrical properties. Furthermore, the Cu wire bonding on the preplated leadframe has advantages, such as the tin whisker prevention and the robust package for automotive application. Nevertheless, a stitch bondability of Cu wire-preplated leadframe is facing several challenges, such as the Cu oxidation, the high hardness of Cu wire and the very thin AuAg plating on the leadframes. This paper discusses the effect of AuAg plating thickness in roughened pre-plated leadframe on the stitch bonding of Cu wires with the leadframe. The stitch bonding integrity was assessed using Dage 4000 shear/pull tool at a key wire bond responses of stitch pull at time zero (T0). Results show that the stitch pull strength of the Cu-leadframe stitch bonding increases with the increase thickness of AuAg layer. FESEM images of the stitch bonding between the Cu wires and the pre-plated leadframes of different AuAg plating thickness did not show any defect in microstructures, thus it suggests that the bonding property is determined by diffusion mechanism at the Cu wire/AuAg stitch bonding interface. Finally, a brief discussion is provided on the stitch bondability of high performance Au-flashed palladium-coated copper wires on the pre-plated leadframe with different AuAg thickness

Effects of process parameters on bondability in thermosonic copper ball bonding

Thermosonic copper ball bonding is an absorbing interconnection technology that serves as a viable and cost saving alternative to gold ball bonding. Its excellent mechanical and electrical characteristics make copper ball bonding attractive for high-speed, power devices and fine-pitch applications. However, copper is easily oxidized and harder than gold, which causes some critical process problems in connection with bondability. In this study, a 50 mum copper wire with purity of 99.99% was bonded on aluminum metallization with thickness 3 mum using an ASM angle 60 automatic thermosonic ball/wedge bonder. Experimental studies of copper free air balls (FABs) formation and bonding process were conducted to establish the bonding mechanism and to explain the effects of process parameters on bondability. A micro-slipping model was proposed to account for the effects of the ultrasonic power and bonding force on bondability. It was found that the bondability was determined by a slip area at the bonding interface. The occurrence of bonding only at the periphery of the contact area between FAB and aluminum metallization was attributed to partial slips at the bonding interface. Variation in the ultrasonic power and bonding force that lead to different stick-slip modes, can effect bondability in the ultrasonic bonding process. It is important to set a proper bonding time to achieve interatomic bonding without causing fatigue rupture of microjoints. It was also found that preheating of the chip to a certain temperature can improve bondability

Experimental Characterization Of Cu Free-Air Ball And Simulations Of Dielectric Fracture During Wire Bonding

Wire bonding is the process of forming electrical connection between the integrated circuit (IC) and its structural package. ICs made of material with low dielectric constant (low-k) and ultra low-k are porous in nature, and are prone to fracture induced failure during packaging process. In recent years, there is increasing interest in copper wire bond technology as an alternative to gold wire bond in microelectronic devices due to its superior electrical performance and low cost. Copper wires are also approximately 25% more conductive than Au wires aiding in better heat dissipation. At present, validated constitutive models for the strain rate and temperature dependent behavior of Cu free-air ball (FAB) appear to be largely missing in the literature. The lack of reliable constitutive models for the Cu FAB has hampered the modeling of the wire bonding process and the ability to assess risk of fracture in ultra low-k dielectric stacks. The challenge to FAB characterization is primarily due to the difficulty in performing mechanical tests on spherical FAB of micrometers in size. To address this challenge, compression tests are performed on FAB using custom-built microscale tester in the current study. Specifically, the tester has three closed-loop controlled linear stages with submicron resolution, a manual tilt stage, a six-axis load cell with sub-Newton load resolution for eliminating misalignment, a milliNewton resolution load cell for compression load measurement, a capacitance sensor to estimate sample deformation and to control the vertical stage in closed loop, a high working depth camera for viewing the sample deformation, and controllers for the stages implemented in the LabVIEW environment. FAB is compressed between tungsten carbide punches and a constitutive model is developed for Cu FAB through an inverse modeling procedure. In the inverse procedure, appropriate constitutive model parameter values are iterated through an automated optimization workflow, until the load-displacement response matches the experimentally observed response. Using the material properties obtained from the experiment, a macroscale finite element model for the impact and ulatrasonic vibration stages of wire bonding process is constructed to simulate (a) Plastic deformation of the Cu FAB at different time steps (b) Evolution of contact pressure (c) Phenomenon such as pad splash and lift-off. The deformations from the macroscale model are provided as input to a microscale model of the dielectric with copper vias as well as line-type heterogeneities. The microscale model is used to identify potential crack nucleation sites as well as the crack path within the ILD stack during wire bonding. The modeling provides insight into the relative amounts of damage accumulated during the impact and the ultrasonic excitation stages. In general, Bonding over Active Circuit (BOAC) has made wire bonding a considerable challenge due to the brittleness of the dielectric. Identifying and locating microscale fractures beneath the bond pads during wire bonding require extensive sample preparation and investigation for microscopic characterization. While simulations of fracture are an attractive alternative to trial and error microscopic characterization, the length scale of components involved in wire bonding varies from millimeters to nanometers. Therefore, constructing a finite element mesh across the model is computationally costly. Also, a multi-scale simulation framework is necessary. Such a modeling framework is also developed in this work to predict crack nucleation and propagation in wire bond induced failure

Thermosonic flip chip interconnection using electroplated copper column arrays

Published versio

Design of a Smart Ultrasonic Transducer for Interconnecting Machine Applications

A high-frequency ultrasonic transducer for copper or gold wire bonding has been designed, analyzed, prototyped and tested. Modeling techniques were used in the design phase and a practical design procedure was established and used. The transducer was decomposed into its elementary components. For each component, an initial design was obtained with simulations using a finite elements model (FEM). Simulated ultrasonic modules were built and characterized experimentally through the Laser Doppler Vibrometer (LDV) and electrical resonance spectra. Compared with experimental data, the FEM could be iteratively adjusted and updated. Having achieved a remarkably highly-predictive FEM of the whole transducer, the design parameters could be tuned for the desired applications, then the transducer is fixed on the wire bonder with a complete holder clamping was calculated by the FEM. The approach to mount ultrasonic transducers on wire bonding machines also is of major importance for wire bonding in modern electronic packaging. The presented method can lead to obtaining a nearly complete decoupling clamper design of the transducer to the wire bonder

Developing the knowledge-based human resources that support the implementation of the National Dual Training System (NDTS): evaluation of TVET teacher's competency at MARA Training Institutions

Development in the world of technical and vocational education and training (TVET) on an ongoing basis is a challenge to the profession of the TVET-teachers to maintain their performance. The ability of teachers to identify the competencies required by their profession is very critical to enable them to make improvements in teaching and learning. For a broader perspective the competency needs of the labour market have to be matched by those developed within the vocational learning processes. Consequently, this study has focused on developing and validating the new empirical based TVET-teacher competency profile and evaluating teacher’s competency. This study combines both quantitative and qualitative research methodology that was designed to answer all the research questions. The new empirical based competency profile development and TVET-teacher evaluation was based upon an instructional design model. In addition, a modified Delphi technique has also been adopted throughout the process. Initially, 98 elements of competencies were listed by expert panel and rated by TVET institutions as important. Then, analysis using manual and statistical procedure found that 112 elements of competencies have emerged from seventeen (17) clusters of competencies. Prior to that, using the preliminary TVET-teacher competency profile, the level of TVETteacher competencies was found to be Proficient and the finding of 112 elements of competencies with 17 clusters was finally used to develop the new empirical based competency profile for MARA TVET-teacher. Mean score analysis of teacher competencies found that there were gaps in teacher competencies between MARA institutions (IKM) and other TVET institutions, where MARA-teacher was significantly better than other TVET teacher. ANOVA and t-test analysis showed that there were significant differences between teacher competencies among all TVET institutions in Malaysia. On the other hand, the study showed that teacher’s age, grade and year of experience are not significant predictors for TVET-teacher competency. In the context of mastering the competency, the study also found that three competencies are classified as most difficult or challenging, twelve competencies are classified as should be improved, and eight competencies are classified as needed to be trained. Lastly, to make NDTS implementation a reality for MARA the new empirical based competency profile and the framework for career development and training pathway were established. This Framework would serve as a significant tool to develop the knowledge based human resources needed. This will ensure that TVET-teachers at MARA are trained to be knowledgeable, competent, and professional and become a pedagogical leader on an ongoing basis towards a world class TVET-education system