428 research outputs found
A Complementary Resistive Switch-based Crossbar Array Adder
Redox-based resistive switching devices (ReRAM) are an emerging class of
non-volatile storage elements suited for nanoscale memory applications. In
terms of logic operations, ReRAM devices were suggested to be used as
programmable interconnects, large-scale look-up tables or for sequential logic
operations. However, without additional selector devices these approaches are
not suited for use in large scale nanocrossbar memory arrays, which is the
preferred architecture for ReRAM devices due to the minimum area consumption.
To overcome this issue for the sequential logic approach, we recently
introduced a novel concept, which is suited for passive crossbar arrays using
complementary resistive switches (CRSs). CRS cells offer two high resistive
storage states, and thus, parasitic sneak currents are efficiently avoided.
However, until now the CRS-based logic-in-memory approach was only shown to be
able to perform basic Boolean logic operations using a single CRS cell. In this
paper, we introduce two multi-bit adder schemes using the CRS-based
logic-in-memory approach. We proof the concepts by means of SPICE simulations
using a dynamical memristive device model of a ReRAM cell. Finally, we show the
advantages of our novel adder concept in terms of step count and number of
devices in comparison to a recently published adder approach, which applies the
conventional ReRAM-based sequential logic concept introduced by Borghetti et
al.Comment: 12 pages, accepted for IEEE Journal on Emerging and Selected Topics
in Circuits and Systems (JETCAS), issue on Computing in Emerging Technologie
Memristor-based Synaptic Networks and Logical Operations Using In-Situ Computing
We present new computational building blocks based on memristive devices.
These blocks, can be used to implement either supervised or unsupervised
learning modules. This is achieved using a crosspoint architecture which is an
efficient array implementation for nanoscale two-terminal memristive devices.
Based on these blocks and an experimentally verified SPICE macromodel for the
memristor, we demonstrate that firstly, the Spike-Timing-Dependent Plasticity
(STDP) can be implemented by a single memristor device and secondly, a
memristor-based competitive Hebbian learning through STDP using a synaptic network. This is achieved by adjusting the memristor's
conductance values (weights) as a function of the timing difference between
presynaptic and postsynaptic spikes. These implementations have a number of
shortcomings due to the memristor's characteristics such as memory decay,
highly nonlinear switching behaviour as a function of applied voltage/current,
and functional uniformity. These shortcomings can be addressed by utilising a
mixed gates that can be used in conjunction with the analogue behaviour for
biomimetic computation. The digital implementations in this paper use in-situ
computational capability of the memristor.Comment: 18 pages, 7 figures, 2 table
Teaching Memory Circuit Elements via Experiment-Based Learning
The class of memory circuit elements which comprises memristive,
memcapacitive, and meminductive systems, is gaining considerable attention in a
broad range of disciplines. This is due to the enormous flexibility these
elements provide in solving diverse problems in analog/neuromorphic and
digital/quantum computation; the possibility to use them in an integrated
computing-memory paradigm, massively-parallel solution of different
optimization problems, learning, neural networks, etc. The time is therefore
ripe to introduce these elements to the next generation of physicists and
engineers with appropriate teaching tools that can be easily implemented in
undergraduate teaching laboratories. In this paper, we suggest the use of
easy-to-build emulators to provide a hands-on experience for the students to
learn the fundamental properties and realize several applications of these
memelements. We provide explicit examples of problems that could be tackled
with these emulators that range in difficulty from the demonstration of the
basic properties of memristive, memcapacitive, and meminductive systems to
logic/computation and cross-bar memory. The emulators can be built from
off-the-shelf components, with a total cost of a few tens of dollars, thus
providing a relatively inexpensive platform for the implementation of these
exercises in the classroom. We anticipate that this experiment-based learning
can be easily adopted and expanded by the instructors with many more case
studies.Comment: IEEE Circuits and Systems Magazine (in press
Toward large-scale access-transistor-free memristive crossbars
Abstract — Memristive crossbars have been shown to be excel-lent candidates for building an ultra-dense memory system be-cause a per-cell access-transistor may no longer be necessary. However, the elimination of the access-transistor introduces sev-eral parasitic effects due to the existence of partially-selected de-vices during memory accesses, which could limit the scalability of access-transistor-free (ATF) memristive crossbars. In this paper we discuss these challenges in detail and describe some solutions addressing these challenges at multiple levels of design abstrac-tion. I
An Analytical Approach for Memristive Nanoarchitectures
As conventional memory technologies are challenged by their technological
physical limits, emerging technologies driven by novel materials are becoming
an attractive option for future memory architectures. Among these technologies,
Resistive Memories (ReRAM) created new possibilities because of their
nano-features and unique - characteristics. One particular problem that
limits the maximum array size is interference from neighboring cells due to
sneak-path currents. A possible device level solution to address this issue is
to implement a memory array using complementary resistive switches (CRS).
Although the storage mechanism for a CRS is fundamentally different from what
has been reported for memristors (low and high resistances), a CRS is simply
formed by two series bipolar memristors with opposing polarities. In this paper
our intention is to introduce modeling principles that have been previously
verified through measurements and extend the simulation principles based on
memristors to CRS devices and hence provide an analytical approach to the
design of a CRS array. The presented approach creates the necessary design
methodology platform that will assist designers in implementation of CRS
devices in future systems.Comment: 12 pages, 10 figures, 4 table
Crossbar-based memristive logic-in-memory architecture
The use of memristors and resistive random access memory (ReRAM) technology to perform logic computations, has drawn considerable attention from researchers in recent years.
However, the topological aspects of the underlying ReRAM architecture and its organization have received less attention, as the focus has mainly been on device-specific properties for functionally complete logic gates through conditional switching in ReRAM
circuits. A careful investigation and optimization of the target geometry is thus highly desirable for the implementation of logic-in-memory architectures. In this paper, we propose a crossbar-based in-memory parallel processing system in which, through the heterogeneity of the resistive cross-point devices, we achieve local information processing in a state-of-the-art ReRAM crossbar architecture with vertical group-accessed transistors as cross-point
selector devices. We primarily focus on the array organization, information storage, and processing flow, while proposing a novel
geometry for the cross-point selection lines to mitigate current sneak-paths during an arbitrary number of possible parallel logic
computations. We prove the proper functioning and potential capabilities of the proposed architecture through SPICE-level circuit simulations of half-adder and sum-of-products logic functions.
We compare certain features of the proposed logic-in-memory approach with another work of the literature, and present an analysis of circuit resources, integration density, and logic computation parallelism.Peer ReviewedPostprint (author's final draft
- …