1,637 research outputs found
Single Event Effects in CMOS Image Sensors
In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI) happened. However Single Event Transient (SET) effects happened on frames: line disturbances, and half or full circular clusters of white pixels. The collection of charges in cluster was investigated with arrays of two pixel width (7 and 10 \textmu{}m), with bulk and epitaxial substrates. This paper shows technological and design parameters involved in the transient events. It also shows that STARDUST simulation software can predict cluster obtained for bulk substrate devices. However, the discrepancies in epitaxial layer devices are large - which shows the need for an improved model
Effects of cosmic rays on single event upsets
Assistance was provided to the Brookhaven Single Event Upset (SEU) Test Facility. Computer codes were developed for fragmentation and secondary radiation affecting Very Large Scale Integration (VLSI) in space. A computer controlled CV (HP4192) test was developed for Terman analysis. Also developed were high speed parametric tests which are independent of operator judgment and a charge pumping technique for measurement of D(sub it) (E). The X-ray secondary effects, and parametric degradation as a function of dose rate were simulated. The SPICE simulation of static RAMs with various resistor filters was tested
A review of advances in pixel detectors for experiments with high rate and radiation
The Large Hadron Collider (LHC) experiments ATLAS and CMS have established
hybrid pixel detectors as the instrument of choice for particle tracking and
vertexing in high rate and radiation environments, as they operate close to the
LHC interaction points. With the High Luminosity-LHC upgrade now in sight, for
which the tracking detectors will be completely replaced, new generations of
pixel detectors are being devised. They have to address enormous challenges in
terms of data throughput and radiation levels, ionizing and non-ionizing, that
harm the sensing and readout parts of pixel detectors alike. Advances in
microelectronics and microprocessing technologies now enable large scale
detector designs with unprecedented performance in measurement precision (space
and time), radiation hard sensors and readout chips, hybridization techniques,
lightweight supports, and fully monolithic approaches to meet these challenges.
This paper reviews the world-wide effort on these developments.Comment: 84 pages with 46 figures. Review article.For submission to Rep. Prog.
Phy
Method and apparatus for increasing resistance of bipolar buried layer integrated circuit devices to single-event upsets
Bipolar transistors fabricated in separate buried layers of an integrated circuit chip are electrically isolated with a built-in potential barrier established by doping the buried layer with a polarity opposite doping in the chip substrate. To increase the resistance of the bipolar transistors to single-event upsets due to ionized particle radiation, the substrate is biased relative to the buried layer with an external bias voltage selected to offset the built-in potential just enough (typically between about +0.1 to +0.2 volt) to prevent an accumulation of charge in the buried-layer-substrate junction
Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications
Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS)
technology are being considered for High Energy Physics applications due to the
ease of production and the reduced costs. Such technology is especially
appealing when large areas to be covered and material budget are concerned.
This is the case of the outermost pixel layers of the future ATLAS tracking
detector for the HL-LHC. For experiments at hadron colliders, radiation
hardness is a key requirement which is not fulfilled by standard CMOS sensor
designs that collect charge by diffusion. This issue has been addressed by
depleted active pixel sensors in which electronics are embedded into a large
deep implantation ensuring uniform charge collection by drift. Very first small
prototypes of hybrid depleted active pixel sensors have already shown a
radiation hardness compatible with the ATLAS requirements. Nevertheless, to
compete with the present hybrid solutions a further reduction in costs
achievable by a fully monolithic design is desirable. The H35DEMO is a large
electrode full reticle demonstrator chip produced in AMS 350 nm HV-CMOS
technology by the collaboration of Karlsruher Institut f\"ur Technologie (KIT),
Institut de F\'isica d'Altes Energies (IFAE), University of Liverpool and
University of Geneva. It includes two large monolithic pixel matrices which can
be operated standalone. One of these two matrices has been characterised at
beam test before and after irradiation with protons and neutrons. Results
demonstrated the feasibility of producing radiation hard large area fully
monolithic pixel sensors in HV-CMOS technology. H35DEMO chips with a substrate
resistivity of 200 cm irradiated with neutrons showed a radiation
hardness up to a fluence of ncm with a hit efficiency of
about 99% and a noise occupancy lower than hits in a LHC bunch
crossing of 25ns at 150V
Effects of cosmic rays on single event upsets
The efforts at establishing a research program in space radiation effects are discussed. The research program has served as the basis for training several graduate students in an area of research that is of importance to NASA. In addition, technical support was provided for the Single Event Facility Group at Brookhaven National Laboratory
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