11,616 research outputs found
RRAM variability and its mitigation schemes
Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. However, critical causes of hardware reliability failures, such as process variation due to their nano-scale structure have gained considerable importance for acceptable memory yields. Such vulnerabilities make it essential to investigate new robust design strategies at the circuit system level. In this paper we have analyzed the RRAM variability phenomenon, its impact and variation tolerant techniques at the circuit level. Finally a variation-monitoring circuit is presented that discerns the reliable memory cells affected by process variability.Peer ReviewedPostprint (author's final draft
System-Level Design for Nano-Electronics
Latest fabrication technologies of self-assembly nano-circuits (carbon nanotubes, silicon nanowires, etc.) have deployed bottom-up techniques that reach feature sizes well below 65nm, holding great promise for future large silicon-based integrated circuits. However, new nano-devices intrinsically have much higher failure rates than CMOS-based ones. Thus, new design methodologies must address the combination of devicelevel error-prone technologies with system integration constraints (low power, performance) to deliver competitive devices at the nanometer scale. In this paper we show that a very promising way to achieve nano-scale devices is combining imperfection-aware design techniques during fabrication with gate defect modeling at circuit level. Our results using this approach to define a Carbon Nanotube Field-Effect Transistor (CNFET)-based design flow for nanoscale logic circuits attain more than 3x energy-delay-product advantage compared to 65nm CMOS-based ones
Meeting the design challenges of nano-CMOS electronics: an introduction to an upcoming EPSRC pilot project
The years of âhappy scalingâ are over and the fundamental challenges that the semiconductor industry faces, at both technology and device level, will impinge deeply upon the design of future integrated circuits and systems. This paper provides an introduction to these challenges and gives an overview of the Grid infrastructure that will be developed as part of a recently funded EPSRC pilot project to address them, and we hope, which will revolutionise the electronics design industry
CMOS-3D smart imager architectures for feature detection
This paper reports a multi-layered smart image sensor architecture for feature extraction based on detection of interest points. The architecture is conceived for 3-D integrated circuit technologies consisting of two layers (tiers) plus memory. The top tier includes sensing and processing circuitry aimed to perform Gaussian filtering and generate Gaussian pyramids in fully concurrent way. The circuitry in this tier operates in mixed-signal domain. It embeds in-pixel correlated double sampling, a switched-capacitor network for Gaussian pyramid generation, analog memories and a comparator for in-pixel analog-to-digital conversion. This tier can be further split into two for improved resolution; one containing the sensors and another containing a capacitor per sensor plus the mixed-signal processing circuitry. Regarding the bottom tier, it embeds digital circuitry entitled for the calculation of Harris, Hessian, and difference-of-Gaussian detectors. The overall system can hence be configured by the user to detect interest points by using the algorithm out of these three better suited to practical applications. The paper describes the different kind of algorithms featured and the circuitry employed at top and bottom tiers. The Gaussian pyramid is implemented with a switched-capacitor network in less than 50 ÎŒs, outperforming more conventional solutions.Xunta de Galicia 10PXIB206037PRMinisterio de Ciencia e InnovaciĂłn TEC2009-12686, IPT-2011-1625-430000Office of Naval Research N00014111031
Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines
Large-capacity Content Addressable Memory (CAM) is a key element in a wide
variety of applications. The inevitable complexities of scaling MOS transistors
introduce a major challenge in the realization of such systems. Convergence of
disparate technologies, which are compatible with CMOS processing, may allow
extension of Moore's Law for a few more years. This paper provides a new
approach towards the design and modeling of Memristor (Memory resistor) based
Content Addressable Memory (MCAM) using a combination of memristor MOS devices
to form the core of a memory/compare logic cell that forms the building block
of the CAM architecture. The non-volatile characteristic and the nanoscale
geometry together with compatibility of the memristor with CMOS processing
technology increases the packing density, provides for new approaches towards
power management through disabling CAM blocks without loss of stored data,
reduces power dissipation, and has scope for speed improvement as the
technology matures.Comment: 10 pages, 11 figure
ToPoliNano: Nanoarchitectures Design Made Real
Many facts about emerging nanotechnologies are yet to be assessed. There are still major concerns, for instance, about maximum achievable device density, or about which architecture is best fit for a specific application. Growing complexity requires taking into account many aspects of technology, application and architecture at the same time. Researchers face problems that are not new per se, but are now subject to very different constraints, that need to be captured by design tools. Among the emerging nanotechnologies, two-dimensional nanowire based arrays represent promising nanostructures, especially for massively parallel computing architectures. Few attempts have been done, aimed at giving the possibility to explore architectural solutions, deriving information from extensive and reliable nanoarray characterization. Moreover, in the nanotechnology arena there is still not a clear winner, so it is important to be able to target different technologies, not to miss the next big thing. We present a tool, ToPoliNano, that enables such a multi-technological characterization in terms of logic behavior, power and timing performance, area and layout constraints, on the basis of specific technological and topological descriptions. This tool can aid the design process, beside providing a comprehensive simulation framework for DC and timing simulations, and detailed power analysis. Design and simulation results will be shown for nanoarray-based circuits. ToPoliNano is the first real design tool that tackles the top down design of a circuit based on emerging technologie
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