Floating gate common mode feedback circuit for low noise amplifiers

Journal ArticleMost low noise amplifier designs focus on eliminating sources of noise that are intrinsic 1.0 the amplifier (thermal noise, Ilfnoise). As integrated (circuit design moves increasingly towards mixed signal implementations, the design of low-noise malog amplifiers must be re-evaluated to consider the switching noise generated by on-chip digital circuitry. We designed three fully differential versions of a previously reported single-ended low-noise amplifier for biomedical applications. Each design uses a different common mode feedback (CMFB) circuit. The first uses a standard continuous-time CMFB circuit, the second uSes a switched capacitor CMFB circuit, and the third uses a novel floating gate CMFB circuit. A test chip he3 been fabricated in a 1.5 pm CMOS process. Tha fully differential amplifiers outperform the single-ended amplifier in the presence of switching noise. The amplifier with the floating gate CMFB circuit has the lowest total harmonic distortion over the critical range and exhibits the smallest fluctuation in the common mode output level

CMOS front-end amplifier for broadband DTV tuner

In this work, the design of a CMOS broadband low noise amplifier with inherent high performance single-to-differential conversion is presented. These characteristics are driven by the double quadrature single conversion digital television tuner which requires accurately balanced differential signals to perform its function and to improve image rejection. A three-stage amplifier is designed to satisfy several requirements of front-end circuits at the same time. The resistive shunt-feedback topology is adopted to implement a single-ended broadband low-noise amplifier as the first stage. The second stage is an on-chip single-to-differential converter, which employs a novel method to improve its balancing performance. A fully differential buffer capable of driving heavy loads is used as the third stage to further suppress the phase and magnitude errors of output differential signals. Fabricated in 0.35??m TSMC standard CMOS technology, the designed broadband front-end amplifier manages to limit the phase error to within ??1.5?? and magnitude error ??0.75dB over 50~850 MHz frequency range, with 16dB gain and a noise figure of 4dB

A wideband noise-canceling CMOS LNA exploiting a transformer

A broadband LNA incorporating single-ended to differential conversion, has been successfully implemented using a noise-canceling technique and a single on-chip transformer. The LNA achieves a high voltage gain of 19dB, a wideband input match (2.5-4.0 GHz), and a noise figure of 4-5.4 dB, while consuming only 8mW. The LNA is implemented in a 90nm CMOS process with 6 metal layers

Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends

A Fully Differential CMOS Potentiostat

A CMOS potentiostat for chemical sensing in a noisy environment is presented. The potentiostat measures bidirectional electrochemical redox currents proportional to the concentration of a chemical down to pico-ampere range. The fully differential architecture with differential recording electrodes suppresses the common mode interference. A 200μm×200μm prototype was fabricated in a standard 0.35μm standard CMOS technology and yields a 70dB dynamic range. The in-channel analog-to-digital converter (ADC) performs 16-bit current-tofrequency quantization. The integrated potentiostat functionality is validated in electrical and electrochemical experiments

A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.A fully-integrated reconfigurable dual-band (760-960 MHz and 2.4-2.5 GHz) transceiver (TRX) for short range wireless communications is presented. The TRX consists of two individually-optimized RF front-ends for each band and one shared power-scalable analog baseband. The sub-GHz receiver has achieved the maximum 75 dBc 3rd-order harmonic rejection ratio (HRR3) by inserting a Q-enhanced notch filtering RF amplifier (RFA). In 2.4 GHz band, a single-ended-to-differential RFA with gain/phase imbalance compensation is proposed in the receiver. A ΣΔ fractional-N PLL frequency synthesizer with two switchable Class-C VCOs is employed to provide the LOs. Moreover, the integrated multi-mode PAs achieve the output P1dB (OP1dB) of 16.3 dBm and 14.1 dBm with both 25% PAE for sub-GHz and 2.4 GHz bands, respectively. A power-control loop is proposed to detect the input signal PAPR in real-time and flexibly reconfigure the PA's operation modes to enhance the back-off efficiency. With this proposed technique, the PAE of the sub-GHz PA is improved by x3.24 and x1.41 at 9 dB and 3 dB back-off powers, respectively, and the PAE of the 2.4 GHz PA is improved by x2.17 at 6 dB back-off power. The presented transceiver has achieved comparable or even better performance in terms of noise figure, HRR, OP1dB and power efficiency compared with the state-of-the-art.Peer reviewe

An Octave-Range, Watt-Level, Fully-Integrated CMOS Switching Power Mixer Array for Linearization and Back-Off-Efficiency Improvement

The power mixer array is presented as a novel power generation approach for non-constant envelope signals. It comprises several power mixer units that are dynamically turned on and off to improve the linearity and back-off efficiency. At the circuit level, the power mixer unit can operate as a switching amplifier to achieve high peak power efficiency. Additional circuit level linearization and back-off efficiency improvement techniques are also proposed. To demonstrate the feasibility of this idea, a fully-integrated octave-range CMOS power mixer array is implemented in a 130 nm CMOS process. It is operational between 1.2 GHz and 2.4 GHz and can generate an output power of +31.3 dBm into an external 50 Ω load with a PAE of 42% and a gain compression of only 0.4 dB at 1.8 GHz. It achieves a PAE of 25%, at an average output power of +26.4 dBm, and an EVM of 4.6% with a non-constant-envelope 16 QAM signal. It can also produce arbitrary signal levels down to -70 dBm of output power with the 16 QAM-modulated signal without any RF gain control circuit

Low-Power, High-Speed Transceivers for Network-on-Chip Communication

Networks on chips (NoCs) are becoming popular as they provide a solution for the interconnection problems on large integrated circuits (ICs). But even in a NoC, link-power can become unacceptably high and data rates are limited when conventional data transceivers are used. In this paper, we present a low-power, high-speed source-synchronous link transceiver which enables a factor 3.3 reduction in link power together with an 80% increase in data-rate. A low-swing capacitive pre-emphasis transmitter in combination with a double-tail sense-amplifier enable speeds in excess of 9 Gb/s over a 2 mm twisted differential interconnect, while consuming only 130 fJ/transition without the need for an additional supply. Multiple transceivers can be connected back-to-back to create a source-synchronous transceiver-chain with a wave-pipelined clock, operating with 6sigma offset reliability at 5 Gb/s

A fully integrated 24-GHz phased-array transmitter in CMOS

This paper presents the first fully integrated 24-GHz phased-array transmitter designed using 0.18-/spl mu/m CMOS transistors. The four-element array includes four on-chip CMOS power amplifiers, with outputs matched to 50 /spl Omega/, that are each capable of generating up to 14.5 dBm of output power at 24 GHz. The heterodyne transmitter has a two-step quadrature up-conversion architecture with local oscillator (LO) frequencies of 4.8 and 19.2 GHz, which are generated by an on-chip frequency synthesizer. Four-bit LO path phase shifting is implemented in each element at 19.2 GHz, and the transmitter achieves a peak-to-null ratio of 23 dB with raw beam-steering resolution of 7/spl deg/ for radiation normal to the array. The transmitter can support data rates of 500 Mb/s on each channel (with BPSK modulation) and occupies 6.8 mm /spl times/ 2.1 mm of die area