A Comparative Study Between a Micromechanical Cantilever Resonator and MEMS-based Passives for Band-pass Filtering Application

Over the past few years, significant growth has been observed in using MEMS based passive components in the RF microelectronics domain, especially in transceiver components. This is due to some excellent properties of the MEMS devices like low loss, excellent isolation etc. in the microwave frequency domain where the on-chip passives normally tend to become leakier and degrades the transceiver performance. This paper presents a comparative analysis between MEMS-resonator based and MEMS-passives based band-pass filter configurations for RF applications, along with their design, simulation, fabrication and characterization. The filters were designed to have a center frequency of 455 kHz, meant for use as the intermediate frequency (IF) filter in superheterodyne receivers. The filter structures have been fabricated in PolyMUMPs process, a three-polysilicon layer surface micromachining process.Comment: 6 pages, 15 figure

Silicon on Nothing Mems Electromechanical Resonator

The very significant growth of the wireless communication industry has spawned tremendous interest in the development of high performances radio frequencies (RF) components. Micro Electro Mechanical Systems (MEMS) are good candidates to allow reconfigurable RF functions such as filters, oscillators or antennas. This paper will focus on the MEMS electromechanical resonators which show interesting performances to replace SAW filters or quartz reference oscillators, allowing smaller integrated functions with lower power consumption. The resonant frequency depends on the material properties, such as Young's modulus and density, and on the movable mechanical structure dimensions (beam length defined by photolithography). Thus, it is possible to obtain multi frequencies resonators on a wafer. The resonator performance (frequency, quality factor) strongly depends on the environment, like moisture or pressure, which imply the need for a vacuum package. This paper will present first resonator mechanisms and mechanical behaviors followed by state of the art descriptions with applications and specifications overview. Then MEMS resonator developments at STMicroelectronics including FEM analysis, technological developments and characterization are detailed.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing

Acoustic Wave Based MEMS Devices, Development and Applications

Acoustic waves based MEMS devices offer a promising technology platform for a wide range of applications due to their high sensitivity and the capability to operate wirelessly. These devices utilize acoustic waves propagating through or on the surface of a piezoelectric material. An acoustic wave device typically consists of two layers, metal transducers on top of piezoelectric substrate or thin films. The piezoelectric material has inherent capabilities of generating acoustic waves related to the input electrical sinusoidal signals placed on the transducers. Using this characteristic, different transducer designs can be placed on top of the piezoelectric material to create acoustic wave based filters, resonators or sensors. Historically, acoustic wave devices have been and are still widely used in telecommunications industry, primarily in mobile cell phones and base stations. Surface Acoustic Wave (SAW) devices are capable of performing powerful signal processing and have been successfully functioning as filters, resonators and duplexers for the past 60 years. Although SAW devices are technological mature and have served the telecommunication industry for several decades, these devices are typically fabricated on piezoelectric substrates and are packaged as discrete components. Considering the wide flexibility and capabilities of the SAW device to form filters, resonators there has been motivation to integrate such devices on silicon substrates as demonstrated in (Nordin et al., 2007; M. J. Vellekoop et al., 1987; Visser et al., 1989). One such example is illustrated in (Nordin et al., 2007) where a CMOS SAW resonator was fabricated using 0.6 m AMIs CMOS technology process with additional MEMS post-processing. The traditional SAW structure of having the piezoelectric at the bottom was inverted. Instead, the IDTs were cleverly manufactured using standard complementary-metal-oxide-semiconductor (CMOS) process and the piezoelectric layer was placed on the top. Active circuitry can be placed adjacent to the CMOS resonator and can be connected using the integrated metal layers. A SAW device can also be designed to have a long propagation path between the input and output transducer. The propagating acoustic waves will then be very sensitive to ambient changes, allowing the device to act as a sensor. Any variations to the characteristics of the propagation path affect the velocity or amplitude of the wave. Important application for acoustic wave devices as sensors include torque and tire pressure sensors (Cullen et al., 1980; Cullen et al., 1975; Pohl et al., 1997), gas sensors (Levit et al., 2002; Nakamoto et al., 1996; Staples, 1999; Wohltjen et al., 1979), biosensors for medical applications (Andle et al., 1995; Ballantine et al., 1996; Cavic et al., 1999; Janshoff et al., 2000), and industrial and commercial applications (vapor, humidity, temperature, and mass sensors) (Bowers et al., 1991; Cheeke et al., 1996; Smith, 2001; N. J. Vellekoop et al., 1999; Vetelino et al., 1996; Weld et al., 1999). In recent years, the interest in the development of highly sensitive acoustic wave devices as biosensor platforms has grown. For biological applications the acoustic wave device is integrated in a microfluidic system and the sensing area is coated with a biospecific layer. When a bioanalyte interacts with this sensing layer, physical, chemical, and/or biochemical changes are produced. Typically, mass and viscosity changes of the biospecific layer can be detected by analyzing changes in the acoustic wave properties such as velocity, attenuation and resonant frequency of the sensor. An important advantage of the acoustic wave biosensors is simple electronic readout that characterizes these sensors. The measurement of the resonant frequency or time delay can be performed with high degree of precision using conventional electronics. This chapter is focused on two important applications of the acoustic-wave based MEMS devices; (1) biosensors and (2) telecommunications. For biological applications these devices are integrated in a microfluidic system and the sensing area is coated with a biospecific layer. When a bioanalyte interacts with this sensing layer, physical, chemical, and/or biochemical changes are produced. Typically, mass and viscosity changes of the biospecific layer can be detected by analyzing changes in the acoustic wave properties such as velocity, attenuation and resonant frequency of the sensor. An important advantage of the acoustic wave biosensors is simple electronic readout that characterizes these sensors. The measurement of the resonant frequency and time delay can be performed with high degree of precision using conventional electronics. Only few types of acoustic wave devices could be integrated in microfluidic systems without significant degradation of the quality factor. The acoustic wave based MEMS devices reported in the literature as biosensors are film bulk acoustic wave resonators (FBAR) and surface acoustic waves (SAW) resonators and SAW delay lines. Different approaches to the realization of FBARs and SAW resonators and SAW delay lines used for various biochemical applications are presented. Next, acoustic wave MEMS devices used in telecommunications applications are presented. Telecommunication devices have different requirements compared to sensors, where acoustic wave devices operating as a filter or resonator are expected to operate at high frequencies (GHz), have high quality factors and low insertion losses. Traditionally, SAW devices have been widely used in the telecommunications industry, however with advancement in lithographic techniques, FBARs are rapidly gaining popularity. FBARs have the advantage of meeting the stringent requirement of telecommunication industry of having Qs in the 10,000 range and silicon compatibility

RF MEMS Based Tunable Bowtie Shaped Substrate Integrated Waveguide Filter

A tunable bandpass filter based on a technique that utilizes substrate integrated waveguide (SIW) and double coupling is presented. The SIW based bandpass filter is implemented using a bowtie shaped resonator structure. The bowtie shaped filter exhibits similar performance as found in rectangular and circular shaped SIW based bandpass filters. This concept reduces the circuit foot print of SIW; along with miniaturization high quality factor is maintained by the structure. The design methodology for single-pole triangular resonator structure is presented. Two different inter-resonator couplings of the resonators are incorporated in the design of the two-pole bowtie shaped SIW bandpass filter, and switching between the two couplings using a packaged RF MEMS switch delivers the tunable filter. A tunning of 1 GHz is achieved for two frequency states of 6.3 and 7.3 GHz. The total size of the circuit is 70mm x 36mm x 0.787 mm (LxWxH)

Performance Analysis of MEMS Based Oscillator for High Frequency Wireless Communication Systems

The frequency oscillator is a basic component found in many electrical, electronic, and communications circuits and systems. Oscillators come in a variety of shapes and sizes, depending on the frequency range employed in a given application. Some applications need oscillators that generate low frequencies and other applications need oscillators that generate extremely high and high frequencies. As a result of the expansion and speed of modern technologies, new oscillators appeared that operating at extremely high frequencies. Most wireless communication systems are constrained in their performance by the accuracy and stability of the reference frequency. Because of its compatibility with silicon, micro-electro-mechanical system (MEMS) is the preferred technology for circuit integration and power reduction. MEMS are a rapidly evolving area of advanced microelectronics. The integration of electrical and mechanical components at the micro size is referred to as a MEMS. MEMS based oscillators have demonstrated tremendous high frequency application potential in recent years. This is owing to their great characteristics such as small size, integration of CMOS IC technology, high frequency-quality factor product, low power consumption, and cheap batch manufacturing cost. This paper's primary objective is to describe the performance of MEMS oscillator technology in high-frequency applications, as well as to discuss the challenges of developing a new MEMS oscillator capable of operating at gigahertz frequencies