Fault-tolerance techniques for hybrid CMOS/nanoarchitecture

The authors propose two fault-tolerance techniques for hybrid CMOS/nanoarchitecture implementing logic functions as look-up tables. The authors compare the efficiency of the proposed techniques with recently reported methods that use single coding schemes in tolerating high fault rates in nanoscale fabrics. Both proposed techniques are based on error correcting codes to tackle different fault rates. In the first technique, the authors implement a combined two-dimensional coding scheme using Hamming and Bose-Chaudhuri-Hocquenghem (BCH) codes to address fault rates greater than 5. In the second technique, Hamming coding is complemented with bad line exclusion technique to tolerate fault rates higher than the first proposed technique (up to 20). The authors have also estimated the improvement that can be achieved in the circuit reliability in the presence of Don-t Care Conditions. The area, latency and energy costs of the proposed techniques were also estimated in the CMOS domain

Built-in Self-test and Defect Tolerance in Molecular Electronics-based Nanofabrics

Abstract. We propose a built-in self-test (BIST) procedure for nanofabrics implemented using chemically assembled electronic nanotechnology. Several fault detection configurations are presented to target stuck-at faults, shorts, opens, and connection faults in nanoblocks and switchblocks. The detectability of multiple faults in blocks within the nanofabric is also considered. We present an adaptive recovery procedure through which we can identify defect-free nanoblocks and switchblocks in the nanofabric-under-test. The proposed BIST, recovery, and defect tolerance procedures are based on the reconfiguration of the nanofabric to achieve complete fault coverage for different types of faults. We show that a large fraction of defect-free blocks can be recovered using a small number of BIST configurations. We also present simple bounds on the recovery that can be achieved for a given defect density. Simulation results are presented for various nanofabric sizes, different defect densities, and for random and clustered defects. The proposed BIST procedure is well suited for regular and dense architectures that have high defect densities