Continuous Mode High Efficiency Power Amplifier Design for X Band

This thesis is focused on the investigation and implementation of novel techniques for the design of X band (8 - 12GHz) power amplifiers. One of the main topics is the expansion and novel implementation of continuous mode theory, with the intention of improving the bandwidth and efficiency of X band power amplifiers. This work builds upon the Class B/J continuous mode theory to incorporate cases where <[ZF0] 6= RL, not described by the original Class B/J theory, with a tool called the “clipping contour”. The clipping contour tool shows a graphical representation on the Smith chart of the boundary between impedances generating a voltage waveform which will modulate or “clip” the current waveform, and a voltage waveform which will leave the current waveform unaltered. This non-clipping space is shown, with measured load pull and amplifier data, to represent the maximum efficiency case for a given ZF0, thus the clipping contour tool thus gives designers the ability to predict the areas of highest efficiency and power given any ZF0, without the need to use costly, time consuming multi harmonic load pull techniques. Push pull amplifiers using quarter wave coupled line baluns are proposed as an ideal matching topology to exploit this new tool. Various balun topologies are studied using a novel extended transmission line model. This model is shown to predict accurately and explain the “trace separation” effect seen in planar baluns and not their 3D coaxial cable equivalents. It also forms the basis of analysis which results in a powerful new equation capable of guaranteeing the elimination of trace separation completely, without compromising performance. This equation is used to design an optimal balun which possesses the largest fractional bandwidth (130%) of any balun ever published on single layer thin film Alumina, whilst simultaneously eliminating trace separation. The optimised Alumina baluns are used to construct push pull output demonstrator circuits which show efficiencies of 40% over greater than an octave bandwidth, a significant advancement of any other comparable published work. These techniques demonstrate the potential to exceed double octave bandwidths with efficiencies greater than 40% once optimised. Initial investigations on MMIC and 2.5D processes show the potential to replicate the Alumina performance over octave and decade bandwidths respectively

Design and Linearization of Energy Efficiency Power Amplifier in Nonlinear OFDM Transmitter for LTE-5G Applications. Simulation and measurements of energy efficiency power amplifier in the presence of nonlinear OFDM transmitter system and digital predistortion based on Hammerstein-Wiener method

This research work has made an effort to understand a novel line of radio frequency power amplifiers (RFPAs) that address initiatives for efficiency enhancement and linearity compensation to harmonize the fifth generation (5G) campaign. The objective is to enhance the performance of an orthogonal frequency division multiplexing-long term evolution (OFDM-LTE) transmitter by reducing the nonlinear distortion of the RFPA. The first part of this work explores the design and implementation of 15.5 W class AB RF power amplifier, adopting a balanced technique to stimulate efficiency enhancement and redeeming exhibition of excessive power in the transmitter. Consequently, this work goes beyond improving efficiency over a linear RF power amplifier design; in which a comprehensive investigation on the fundamental and harmonic components of class F RF power amplifier using a load-pull approach to realise an optimum load impedance and the matching network is presented. The frequency bandwidth for both amplifiers was allocated to operate in the 2.620-2.690 GHz of mobile LTE applications. The second part explores the development of the behavioural model for the class AB power amplifier. A particular novel, Hammerstein-Wiener based model is proposed to describe the dynamic nonlinear behaviour of the power amplifier. The RF power amplifier nonlinear distortion is approximated using a new linear parameter approximation approach. The first and second-order Hammerstein-Wiener using the Normalised Least Mean Square Error (NLMSE) algorithm is used with the aim of easing the complexity of filtering process during linear memory cancellation. Moreover, an enhanced adaptive Wiener model is proposed to explore the nonlinear memory effect in the system. The proposed approach is able to balance between convergence speed and high-level accuracy when compared with behavioural modelling algorithms that are more complex in computation. Finally, the adaptive predistorter technique is implemented and verified in the OFDM transceiver test-bed. The results were compared against the computed one from MATLAB simulation for OFDM and 5G modulation transmitters. The results have confirmed the reliability of the model and the effectiveness of the proposed predistorter.Fundacão para a Ciência e a Tecnologia, Portugal, under European Union’s Horizon 2020 research and innovation programme ... grant agreement H2020-MSCA-ITN- 2016 SECRET-722424 I also acknowledge the role of the National Space Research and Development Agency (NASRDA) Sokoto State Government Petroleum Technology Trust Fund (PTDF

Wide Bandgap Based Devices

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits

DESIGN TECHNIQUES FOR HIGH-EFFICIENCY MICROWAVE POWER AMPLIFIERS

The increasingly diffusion of wireless devices during the last years has established a sort of “second youth” of analog electronics related to telecommunication systems. Nowadays, in fact, electronic equipments for wireless communication are exploited not only for niche sectors as strategic applications (e.g., military, satellite and so on): as a matter of fact, a large number of commercial devices exploit wireless transmitting systems operating at RF and microwave frequencies. As a consequence, increasing interest has been focused by academic and industrial communities on RF and microwave circuits and in particular on power amplifiers, that represent the core of a wireless transmitting system. In this context, more and more challenging performance are demanded to such a kind of circuit, especially in terms of output power, bandwidth and efficiency. The present thesis work has been focused on RF and microwave power amplifier design that, as said before, represents one of most actual and attractive research theme. Several aspects of such topic have been covered, from the analysis of different design techniques available in literature to the development of an innovative design approach, providing many experimental results related to realized power amplifiers. Particular emphasis has been given to high-efficiency power amplifier classes of operation, that represent an hot issue in a world more and more devoted to the energy conservation. Moreover, electron device degradation phenomena were investigated, that although not directly accounted for, represent a key issue in microwave power amplifier design. In particular, the first chapter of this thesis provides an overview of commonly adopted design methodologies for microwave power amplifier, analyzing the advantages and the critical aspects of such approaches. Moreover, nonlinear device modeling issues oriented to microwave power amplifier design have been dealt with. In the second chapter, an innovative design technique is presented. It is based on experimental electron device nonlinear characterization, carried out by means of a low-frequency large signal measurement setup, in conjunction with the modeling of high-frequency nonlinear dynamic phenomena. Several design examples have been carried out by exploiting the proposed approach that confirm the effectiveness of the design technique. In the third chapter, the proposed design methodology has been applied to high-efficiency power amplifier classes of operations, that need to control the device terminations not only at the fundamental frequency, but also at harmonics. Two high-efficiency power amplifiers have been realized by adopting such a technique, demonstrating performance in terms of output power and efficiency comparable with the state of the art. Finally, in chapter four an important power amplifier design aspect has been dealt with, related to degradation and performance limitation of microwave electron devices. Several experimental results have been carried out by exploiting a new measurement setup, oriented to the characterization of degradation phenomena of microwave electron devices