Integrated Silicon Photonics for High-Speed Quantum Key Distribution

Integrated photonics offers great potential for quantum communication devices in terms of complexity, robustness and scalability. Silicon photonics in particular is a leading platform for quantum photonic technologies, with further benefits of miniaturisation, cost-effective device manufacture and compatibility with CMOS microelectronics. However, effective techniques for high-speed modulation of quantum states in standard silicon photonic platforms have been limited. Here we overcome this limitation and demonstrate high-speed low-error quantum key distribution modulation with silicon photonic devices combining slow thermo-optic DC biases and fast (10~GHz bandwidth) carrier-depletion modulation. The ability to scale up these integrated circuits and incorporate microelectronics opens the way to new and advanced integrated quantum communication technologies and larger adoption of quantum-secured communications

Silicon photonic modulators for PAM transmissions

High-speed optical interconnects are crucial for both data centers and high performance computing systems. High power consumption and limited device bandwidth have hindered the move to higher optical transmission speeds. Integrated optical transceivers in silicon photonics (SiP) using pulse-amplitude modulation (PAM) are a promising solution to increase data rates. In this paper, we review recent progress in SiP for PAM transmissions. We focus on materials and technologies available CMOS-compatible photonics processes. Performance metrics of SiP modulators and crucial considerations for high-speed PAM transmissions are discussed. Various driving strategies to achieve optical PAM signals are presented. Some of the state-of-the-art SiP PAM modulators and integrated transmitters are reviewed

Transmetteurs photoniques sur silicium pour les transmissions optiques à grande capacité

Les applications exigeant des très nombreuses données (médias sociaux, diffusion vidéo en continu, mégadonnées, etc.) se développent à un rythme rapide, ce qui nécessite de plus en plus de liaisons optiques ultra-rapides. Ceci implique le développment des transmetteurs optiques intégrés et à bas coût et plus particulirement en photonique sur silicium en raison de ses avantages par rapport aux autres technologies (LiNbO3 et InP), tel que la compatibilité avec le procédé de fabrication CMOS. Les modulateurs optoélectronique sont un élément essentiel dans la communication op-tique. Beaucoup de travaux de recherche sont consacrées au développement de dispositifs optiques haut débit efficaces. Cependant, la conception de modulateurs en photonique sur sili-cium (SiP) haut débit est diffcile, principalement en raison de l'absence d'effet électro-optique intrinsèque dans le silicium. De nouvelles approches et de architectures plus performances doivent être développées afin de satisfaire aux critères réliés au système d'une liaison optique aux paramètres de conception au niveau du dispositif integré. En outre, la co-conception de circuits integrés photoniques sur silicium et CMOS est cruciale pour atteindre tout le potentiel de la technologie de photonique sur silicium. Ainsi cette thèse aborde les défits susmentionnés. Dans notre première contribution, nous préesentons pour la première fois un émetteur phononique sur silicium PAM-4 sans utiliser un convertisseur numérique analog (DAC)qui comprend un modulateur Mach Zehnder à électrodes segmentées SiP (LES-MZM) implémenté dans un procédé photonique sur silicium générique avec jonction PN latérale et son conducteur CMOS intégré. Des débits allant jusqu'à 38 Gb/s/chnnel sont obtenus sans utili-ser un convertisseur numérique-analogique externe. Nous présentons également une nouvelle procédure de génération de délai dans le excitateur de MOS complémentaire. Un effet, un délai robuste aussi petit que 7 ps est généré entre les canaux de conduite. Dans notre deuxième contribution, nous présentons pour la première fois un nouveau fac-teur de mérite (FDM) pour les modulateurs SiP qui inclut non seulement la perte optique et l'efficacité (comme les FDMs précédents), mais aussi la bande passante électro-optique du modulateur SiP (BWEO). Ce nouveau FDM peut faire correspondre les paramètres de conception physique du modulateur SiP à ses critères de performance au niveau du système, facilitant à la fois la conception du dispositif optique et l'optimisation du système. Pour la première fois nous définissons et utilisons la pénalité de puissance du modulateur (MPP) induite par le modulateur SiP pour étudier la dégradation des performances au niveau du système induite par le modulateur SiP dans une communication à base de modulation d'amplitude d'impulsion optique. Nous avons développé l'équation pour MPP qui inclut les facteurs de limitation du modulateur (perte optique, taux d'extinction limité et limitation de la bande passante électro-optique). Enfin, dans notre troisième contribution, une nouvelle méthodologie de conception pour les modulateurs en SiP intégré à haute débit est présentée. La nouvelle approche est basée sur la minimisation de la MPP SiP en optimisant l'architecture du modulateur et le point de fonctionnement. Pour ce processus, une conception en longueur unitaire du modulateur Mach Zehnder (MZM) peut être optimisée en suivant les spécifications du procédé de fabrication et les règles de conception. Cependant, la longueur et la tension de biais du d'éphaseur doivent être optimisées ensemble (par exemple selon vitesse de transmission et format de modulation). Pour vérifier l'approche d'optimisation proposée expérimentale mont, a conçu un modulateur photonique sur silicium en phase / quadrature de phase (IQ) ciblant le format de modulation 16-QAM à 60 Gigabaud. Les résultats expérimentaux prouvent la fiabilité de la méthodologie proposée. D'ailleurs, nous avons augmenté la vitesse de transmission jusqu'à 70 Gigabaud pour tester la limite de débit au système. Une transmission de données dos à dos avec des débits binaires de plus de 233 Gigabit/s/channel est observée. Cette méthodologie de conception ouvre ainsi la voie à la conception de la prochaine génération d'émetteurs intégrés à double polarisation 400+ Gigabit/s/channel.Data-hungry applications (social media, video streaming, big data, etc.) are expanding at a fast pace, growing demand for ultra-fast optical links. This driving force reveals need for low-cost, integrated optical transmitters and pushes research in silicon photonics because of its advantages over other platforms (i.e. LiNbO3 and InP), such as compatibility with CMOS fabrication processes, the ability of on-chip polarization manipulation, and cost effciency. Electro-optic modulators are an essential component of optical communication links and immense research is dedicated to developing effcient high-bitrate devices. However, the design of high-capacity Silicon Photonics (SiP) transmitters is challenging, mainly due to lack of inherent electro-optic effect in silicon. New design methodologies and performance merits have to be developed in order to map the system-level criteria of an optical link to the design parameters in device-level. In addition, co-design of silicon photonics and CMOS integrated circuits is crucial to reveal the full potential of silicon photonics. This thesis addresses the aforementioned challenges. In our frst contribution, for the frst time we present a DAC-less PAM-4 silicon photonic transmitter that includes a SiP lumped-element segmented-electrode Mach Zehnder modula-tor (LES-MZM) implemented in a generic silicon photonic process with lateral p-n junction and its co-designed CMOS driver. Using post processing, bitrates up to 38 Gb/s/channel are achieved without using an external digital to analog converter. We also presents a novel delay generation procedure in the CMOS driver. A robust delay as small as 7 ps is generated between the driving channels. In our second contribution, for the frst time we present a new figure of merit (FOM) for SiP modulators that includes not only the optical loss and effciency (like the prior FOMs), but also the SiP modulator electro-optic bandwidth ( BWEO). This new FOM can map SiP modulator physical design parameters to its system-level performance criteria, facilitating both device design and system optimization. For the frst time we define and employ the modulator power penalty (MPP) induced by the SiP modulator to study the system level performance degradation induced by SiP modulator in an optical pulse amplitude modulation link. We develope a closed-form equation for MPP that includes the SiP modulator limiting factors (optical loss, limited extinction ratio and electro-optic bandwidth limitation). Finally in our third contribution, we present a novel design methodology for integrated high capacity SiP modulators. The new approach is based on minimizing the power penalty of a SiP modulator (MPP) by optimizing modulator design and bias point. For the given process, a unit-length design of Mach Zehnder modulator (MZM) can be optimized following the process specifications and design rules. However, the length and the bias voltage of the phase shifter must be optimized together in a system context (e.g., baud rate and modulation format). Moreover, to verify the proposed optimization approach in experiment, we design an in-phase/quadrature-phase (IQ) silicon photonic modulator targeting 16-QAM modulation format at 60 Gbaud. Experimental results proves the reliability of our proposed methodology. We further push the baud rate up to 70 Gbaud to examine the capacity boundary of the device. Back to back data transmission with bitrates more than 233 Gb/s/channel are captured. This design methodology paves the way for designing the next generation of integrated dual- polarization 400+ Gb/s/channel transmitters

Towards Compact and High Speed Silicon Modulators

Los moduladores son elementos claves para la transmisión de la señal y el procesamiento de la información. Las técnicas de fabricación avanzadas "complementary metal-oxide semiconductor" (CMOS) permiten reducir drásticamente las dimensiones de estos dispositivos de interés para la implementación a gran escala en un chip de silicito a bajo coste. El trabajo realizado en esta tesis se centra en el diseño, la fabricación y la caracterización de estructuras de onda lenta con el objetivo de realizar moduladores compactos y eficientes integrados en un chip de silicio. El trabajo se divide en cuatro capítulos y un capítulo de conclusión y perspectivas. El capítulo uno introduce los fundamentos de física del estado sólido y de los mecanismos básicos de propagación guiada de la luz por reflexión total interna. El capítulo dos presenta los parámetros importantes de los moduladroes electro-ópticos así como un trabajo de recopilación de todos los mecanismos físicos que pueden ser empleados para modular la luz en silicio. Además, se presenta el estado del arte de los moduladores basados en silicio. El capítulo tres presenta el diseño , fabricación y caracterización de un modulador electro-óptico en silicio compacto y eficiente basado en el efecto de onda lenta en una estructura periódica unidimensional integrada, cuya geometría, similar a la de una red de Bragg, permite reducir la velocidad de grupo de un paquetes de ondas. Dicho efecto, se emplea para incrementar la interacción luz-materia y por lo tanto la eficiencia del modulador electro-óptico. El capítulo cuatro demuestra experimentalmente que dicha guía unidimensional periódica puede ser mejorada a fin de conseguir que el efecto de baja velocidad de grupo suceda en un rango mayor de longitudes de onda para posibles aplicaciones como la multiplexación por división de longitudinal de onda. En el capítulo cinco, se proporcionan conclusiones y perspectivas sobre el trabajo realizado.Brimont ., ACJ. (2011). Towards Compact and High Speed Silicon Modulators [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/14345Palanci

Silicon Photonic IQ Modulators for 400 Gb/s and beyond

Silicon photonics has enormous potential for ultrahigh-capacity coherent optical transceivers. We demonstrate an IQ modulator using silicon photonic traveling-wave modulators optimized for higher-order quadrature amplitude modulation (QAM). Its optical and RF characteristics are studied thoroughly in simulation and experiment. We propose a system-orientated approach to optimization of the silicon photonic IQ modulator, which minimizes modulator-induced power penalty in a QAM transmission link. We examine the trade-off between modulation efficiency and bandwidth for the optimal combination of modulator length and bias voltage to maximize the clear distance between adjacent constellation points. This optimum depends on baud rate and modulation format, as well as achievable driving voltage swing. Measured results confirm our prediction using the proposed methodology. Without pre-compensating bandwidth limitation of the modulator, net data rates up to 232 Gb/s (70 Gbaud 16-QAM) on single polarization are captured, indicating great potential for 400+ Gb/s dual-polarization transmission

Characterization and Analysis of Integrated Silicon Photonic Detectors for High-Speed Communications

As the digital age of rapidly expanding information systems and technology continue to grow and develop at an ever increasing rate, new fabrication media must be investigated in order to keep up with these trends. The modern age has been defined by the innovation and advancement of the semiconductor transistor specifically Silicon, however these days of exponential performance gain through gate minimization are coming to a close. One such field which shows great promise for meeting the challenges of the future is the integration of photonic and complementary metal oxide semiconductor components; leveraging the long standing fabrication history of Silicon devices. This document describes the characterization and analysis of integrated photodiodes for digital and analog applications. The photodiode is one small but necessary component for the integration of system-level photonic devices. A number of standard measurements were taken on the photodiodes to analyze their performance and potential application. Additionally, an anomalous detector behavior was investigated through both transient measurements to identify the driving mechanism of the abnormality. Through this testing the devices were found to perform with up to 30-GHz of bandwidth while maintaining dark currents below 5 nA. The non-linear behavior was observed under CW conditions and analyzed using the transient response of the photodiode. The transient response of the photodiode supported that the non-linear mechanism was photon-induced avalanche-like effect, however, further investigation is required. Additional work is described to further investigate this behavior, as well to identify potential effects on future application in system level communication designs

Development of an integrated silicon photonic transceiver for access networks

Debido a la imparable aparición de dispositivos móviles multifunción junto con aplicaciones que requieren cada vez más un mayor ancho de banda en cualquier momento y en cualquier lugar, las futuras redes de acceso deberán ser capaces de proporcionar servicios tanto inalámbricos como cableados. Es por ello que una solución a seguir es el uso de sistemas de comunicaciones ópticas como medio de transporte de señales inalámbricas en enlaces de radio sobre fibra. Con ello, se converge a un dominio óptico reduciendo y aliviando el cuello de botella entre los estándares de acceso inalámbrico y cableado. En esta tesis, como parte de los objetivos establecidos en el proyecto europeo HELIOS en el que está enmarcada, se han investigado y desarrollado los bloques funcionales básicos necesarios para realizar un transceptor fotónico integrado trabajando en el rango de longitudes de onda milimétricas, y haciendo uso de los formatos de modulación más robustos y que mejor se adaptan al ámbito de aplicación considerado. El trabajo que se presenta en esta tesis se puede dividir básicamente en tres partes. La primera de ellas ofrece una descripción general de los beneficios del uso de la fotónica en silicio para el desarrollo de enlaces inalámbricos a velocidades de Gbps, así como el estado del arte de los transceptores desarrollados por los grupos de investigación más activos y punteros para satisfacer las necesidades de mercado, cada vez más exigentes. La segunda parte se centra en el estudio y desarrollo del transmisor integrado de onda milimétrica. Primero realizamos una breve introducción teórica tanto del funcionamiento de los dispositivos que forman parte del transmisor, como a los formatos de modulación existentes, centrando la atención en la modulación por desplazamiento de fase (PSK) que es la que se va a utilizar en el desarrollo de los dispositivos implicados, y más concretamente en la modulación (diferencial) de fase en cuadratura ((D)QPSK). También se presentan los bloques básicos que integran nuestro transmisor y se fijan las especificaciones que deben cumplir dichos bloques para conseguir una transmisión libre de errores. El transmisor está compuesto por un filtro/demultiplexor encargado de separar dos portadoras ópticas separadas una frecuencia de 60 GHz. Una de estas portadoras es modulada al pasar por un modulador DQPSK basado en una estructura de dos MachZehnders (MZs) anidados, para ser nuevamente combinada con la otra portadora óptica que se ha mantenido intacta. Una vez combinadas, éstas son fotodetectadas para ser transmitidas inalámbricamente. En la tercera parte de esta tesis, se investiga el uso de un esquema de diversidad en polarización junto a un receptor DQPSK integrado para la demodulación de la señal recibida. El esquema de diversidad en polarización está formado básicamente por dos bloques: un separador de polarización con el objetivo de separar la luz a la entrada del chip en sus dos componentes ortogonales; y un rotador de polarización. En lo que se refiere al receptor DQPSK propiamente dicho, se ha investigado y optimizado cada uno de los bloques funcionales que lo componen. Éstos son básicamente un divisor de potencia termo-ópticamente sintonizable basado en un interferómetro MZ, en serie con un interferómetro MZ que introduce un retardo de duración de un bit en uno de sus brazos, para obtener una correcta demodulación diferencial. El siguiente bloque que forma parte de nuestro receptor DQPSK es un 2x4 acoplador de interferencia multimodal actuando como un híbrido de 90 grados, cuyas salidas van a parar a dos fotodetectores balanceados de germanio. Las contribuciones principales de esta tesis han sido: ¿ Demostración de un filtro/demultiplexor con tres grados de sintonización con una relación de extinción superior a 25dB. ¿ Demostración de un rotador con una longitud de tan sólo 25µm y CMOS compatible. ¿ Demostración de un modulador DPSK a una velocidad máxima de 20 Gbit/s. ¿ Demostración de un demodulador DQPSK a una velocidad máxima de 20 Gbit/s.Due to the relentless emergence of multifunction mobile devices with applications that require increasingly greater bandwidth at anytime and anywhere, future access networks must be capable of providing both wireless and wired services. The use of optical communications systems as transport medium of wireless signals over fiber radio links is a steady solution to be taken into account. This will make possible a convergence to an optical domain reducing and alleviating the bottleneck between wireless access standards and current wired access. In this thesis, as part of the objectives of the European project HELIOS in which it is framed, we have investigated and developed the basic functional blocks needed to achieve an integrated photonic transceiver working in the range of millimetre wavelengths, and using robust modulation formats that best fit the scope considered. The work presented in this thesis can be basically divided into three parts. The first one provides an overview of the benefits of using silicon photonics for the development of wireless links at rates of Gbps, and the state of the art of the transceivers reported by the most important research groups in order to meet the increasingly demanding needs¿ market. The second part focuses on the study and development of millimetre-wave integrated transmitter. First we provide a brief theoretical introduction of the operation principles of the devices involved in the transmitter such as a modulation formats, focusing on the phase shift keying (PSK) which is the one that will be used, particularly the (differential) quadrature phase shift keying ((D) QPSK). We also present the building blocks involved in our transmitter and we set the specifications that must be met by these devices in order to achieve an error-free transmission. The transmitter includes a filter/demultiplexer which must separate two optical carriers 60 GHz separated. One of these optical carriers is modulated by passing through a DQPSK Mach-Zehnder-based modulator (MZM) by arranging two MZMs in a nested configuration. Using a combiner, the modulated optical signal and the un-modulated carrier are combined and photodetected to be transmitted wirelessly. In the third part of this thesis, we investigate the use of a polarization diversity scheme with an integrated DQPSK receiver for demodulating of the wireless signal. The polarization diversity scheme basically consists of two blocks: a polarization splitter in order to separate the random polarization state of the incoming light into its two orthogonal components, and a polarization rotator. Regarding the DQPSK receiver itself, all the functional blocks that comprise it have been investigated and optimized. It basically includes a thermo-optically tunable MZ interferometer power splitter, in series with a MZ interferometer that introduces, in one of its arms, a delay of one bit length in order to obtain a correct differential demodulation. The next building block of our DQPSK receiver is a 2x4 multimode interference coupler acting as a 90 degree hybrid, whose outputs are connected to two balanced germanium photodetectors. The main contributions of this thesis are: ¿ Demonstration of a filter/demultiplexer with three degrees of tuning and an extinction ratio greater than 25dB. ¿ Demonstration of a polarization rotator with a length of only 25¿m and CMOS compatible. ¿ Demonstration of a DPSK modulator at a maximum rate of 20 Gbit/s. ¿ Demonstration of a DQPSK demodulator to a maximum rate of 20 Gbit/s.Aamer, M. (2013). Development of an integrated silicon photonic transceiver for access networks [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/31649TESI

High Efficiency Silicon Photonic Interconnects

Silicon photonic has provided an opportunity to enhance future processor speed by replacing copper interconnects with an on chip optical network. Although photonics are supposed to be efficient in terms of power consumption, speed, and bandwidth, the existing silicon photonic technologies involve problems limiting their efficiency. Examples of limitations to efficiency are transmission loss, coupling loss, modulation speed limited by electro-optical effect, large amount of energy required for thermal control of devices, and the bandwidth limit of existing optical routers. The objective of this dissertation is to investigate novel materials and methods to enhance the efficiency of silicon photonic devices. The first part of this dissertation covers the background, theory and design of on chip optical interconnects, specifically silicon photonic interconnects. The second part describes the work done to build a 300mm silicon photonic library, including its process flow, comprised of basic elements like electro-optical modulators, germanium detectors, Wavelength Division Multiplexing (WDM) interconnects, and a high efficiency grating coupler. The third part shows the works done to increase the efficiency of silicon photonic modulators, unitizing the χ(3) nonlinear effect of silicon nanocrystals to make DC Kerr effect electro-optical modulator, combining silicon with lithium niobate to make χ(2) electro-optical modulators on silicon, and increasing the efficiency of thermal control by incorporating micro-oven structures in electro-optical modulators. The fourth part introduces work done on dynamic optical interconnects including a broadband optical router, single photon level adiabatic wavelength conversion, and optical signal delay. The final part summarizes the work and talks about future development