18 research outputs found

    Redesigning Commercial Floating-Gate Memory for Analog Computing Applications

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    We have modified a commercial NOR flash memory array to enable high-precision tuning of individual floating-gate cells for analog computing applications. The modified array area per cell in a 180 nm process is about 1.5 um^2. While this area is approximately twice the original cell size, it is still at least an order of magnitude smaller than in the state-of-the-art analog circuit implementations. The new memory cell arrays have been successfully tested, in particular confirming that each cell may be automatically tuned, with ~1% precision, to any desired subthreshold readout current value within an almost three-orders-of-magnitude dynamic range, even using an unoptimized tuning algorithm. Preliminary results for a four-quadrant vector-by-matrix multiplier, implemented with the modified memory array gate-coupled with additional peripheral floating-gate transistors, show highly linear transfer characteristics over a broad range of input currents.Comment: 4 pages, 6 figure

    Two Transistor Synapse with Spike Timing Dependent Plasticity

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    We present a novel two transistor synapse (“2TS”) that exhibits spike timing dependent plasticity (“STDP”). Temporal coincidence of synthetic pre- and post- synaptic action potentials across the 2TS induces localized floating gate injection and tunneling that result in proportional Hebbian synaptic weight updates. In the absence of correlated pre- and postsynaptic activity, no significant weight updates occur. A compact implementation of the 2TS has been designed, simulated, and fabricated in a commercial 0.5 μm process. Suitable synthetic neural waveforms for symmetric STDP have been derived and circuit and network operation have been modeled and tested. Simulations agree with theory and preliminary experimental results

    A study on hardware design for high performance artificial neural network by using FPGA and NoC

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    制度:新 ; 報告番号:甲3421号 ; 学位の種類:博士(工学) ; 授与年月日:2011/9/15 ; 早大学位記番号:新574

    480-GMACS/mW Resonant Adiabatic Mixed-Signal Processor Array for Charge-Based Pattern Recognition

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