Stress Monitoring of Post-processed MEMS Silicon Microbridge Structures Using Raman Spectroscopy

Inherent residual stresses during material deposition can have profound effects on the functionality and reliability of fabricated Micro-Electro-Mechanical Systems (MEMS) devices. Residual stress often causes device failure due to curling, buckling, or fracture. Typically, the material properties of thin films used in surface micromachining are not well controlled during deposition. The residual stress; for example, tends to vary significantly for different deposition methods. Currently, few nondestructive techniques are available to measure residual stress in MEMS devices prior to the final release etch. In this research, micro-Raman spectroscopy is used to measure the residual stresses in polysilicon MEMS microbridge devices. This measurement technique was selected since it is nondestructive, fast, and provides the potential for in-situ stress monitoring. Raman spectroscopy residual stress profiles on unreleased and released MEMS microbridge beams are compared to analytical and FEM models to assess the viability of micro-Raman spectroscopy as an in-situ stress measurement technique. Raman spectroscopy was used during post-processing phosphorus ion implants on unreleased MEMS devices to investigate and monitor residual stress levels at key points during the post-processing sequences. As observed through Raman stress profiles and verified using on-chip test structures, the post-processing implants and accompanying anneals resulted in residual stress relaxation of over 90%

A survey of carbon nanotube interconnects for energy efficient integrated circuits

This article is a review of the state-of-art carbon nanotube interconnects for Silicon application with respect to the recent literature. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) challenges with current copper interconnects, 2) process & growth of carbon nanotube interconnects compatible with back-end-of-line integration, and 3) modeling and simulation for circuit-level benchmarking and performance prediction. The focus is on the evolution of carbon nanotube interconnects from the process, theoretical modeling, and experimental characterization to on-chip interconnect applications. We provide an overview of the current advancements on carbon nanotube interconnects and also regarding the prospects for designing energy efficient integrated circuits. Each selected category is presented in an accessible manner aiming to serve as a survey and informative cornerstone on carbon nanotube interconnects relevant to students and scientists belonging to a range of fields from physics, processing to circuit design

On-a-chip microdischarge thruster arrays inspired by photonic device technology for plasma television

This study shows that the practical scaling of a hollow cathode thruster device to MEMS level should be possible albeit with significant divergence from traditional design. The main divergence is the need to operate at discharge pressures between 1-3bar to maintain emitter diameter pressure products of similar values to conventional hollow cathode devices. Without operating at these pressures emitter cavity dimensions become prohibitively large for maintenance of the hollow cathode effect and without which discharge voltage would be in the hundreds of volts as with conventional microdischarge devices. In addition this requires sufficiently constrictive orifice diameters in the 10µm – 50µm range for single cathodes or <5µm larger arrays. Operation at this pressure results in very small Debye lengths (4 -5.2pm) and leads to large reductions in effective work function (0.3 – 0.43eV) via the Schottky effect. Consequently, simple work function lowering compounds such as lanthanum hexaboride (LaB6) can be used to reduce operating temperature without the significant manufacturing complexity of producing porous impregnated thermionic emitters as with macro scale hollow cathodes, while still operating <1200°C at the emitter surface. The literature shows that LaB6 can be deposited using a variety of standard microfabrication techniques

Transient electrothermal simulation of power semiconductor devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature

Iris segmentation

The quality of eye image data become degraded particularly when the image is taken in the non-cooperative acquisition environment such as under visible wavelength illumination. Consequently, this environmental condition may lead to noisy eye images, incorrect localization of limbic and pupillary boundaries and eventually degrade the performance of iris recognition system. Hence, this study has compared several segmentation methods to address the abovementioned issues. The results show that Circular Hough transform method is the best segmentation method with the best overall accuracy, error rate and decidability index that more tolerant to ‘noise’ such as reflection

Assessing polymeric nanocomposites and advanced cooling techniques for thermal management of next-generation power electronics

The field of power electronics devices has seen two significant trends in recent years: rapid miniaturization of devices and the replacement of silicon-based devices with wide bandgap semiconductor materials-based devices (Silicon Carbide (SiC), Gallium Nitride (GaN)). The end result of these advancements are devices that need advanced cooling technologies to dissipate ultrahigh high and concentrated heat loads. Multiple advanced thermal management solutions such as liquid cooling, jet, and spray impingement have been proposed as potential solutions. The present dissertation quantifies the benefits of key advanced cooling techniques for thermal management of power electronics packages. An analytical modeling framework based on a thermal resistance circuit has been utilized to estimate the maximum heat flux that can be dissipated from a power electronics package, and the junction temperatures at varying levels of power dissipation. Analysis was conducted for heat sinks made of copper (k=400 W/mK) and a polymer (k=20 W/mK). The developed modeling framework takes into account heat spreading in both lateral directions while capturing the influence of material properties on the spreading angle. The model can, therefore, be considered to capture 3D effects as well. Additionally, 3D Finite Element Analysis (FEA) simulations have been carried out to compare with the findings of the analytical model. This dissertation also studies the influence of polymeric encapsulants of varying thermal conductivities on the resulting temperature distributions in the package via steady 2D coupled electro-thermal simulations. Overall, the methodology and results presented in this dissertation provide insights for selecting optimal combinations of thermal management technologies and advanced polymeric materials, based on the heat dissipation requirements of power electronics packages.Mechanical Engineerin

Enhancement and tunability of near-field radiative heat transfer mediated by surface plasmon polaritons in thin plasmonic films

The properties of thermal radiation exchange between hot and cold objects can be strongly modified if they interact in the near field where electromagnetic coupling occurs across gaps narrower than the dominant wavelength of thermal radiation. Using a rigorous fluctuational electrodynamics approach, we predict that ultra-thin films of plasmonic materials can be used to dramatically enhance near-field heat transfer. The total spectrally integrated film-to-film heat transfer is over an order of magnitude larger than between the same materials in bulk form and also exceeds the levels achievable with polar dielectrics such as SiC. We attribute this enhancement to the significant spectral broadening of radiative heat transfer due to coupling between surface plasmon polaritons (SPPs) on both sides of each thin film. We show that the radiative heat flux spectrum can be further shaped by the choice of the substrate onto which the thin film is deposited. In particular, substrates supporting surface phonon polaritons (SPhP) strongly modify the heat flux spectrum owing to the interactions between SPPs on thin films and SPhPs of the substrate. The use of thin film phase change materials on polar dielectric substrates allows for dynamic switching of the heat flux spectrum between SPP-mediated and SPhP-mediated peaks.Comment: 25 pages, 11 figure

Ultrafast Temperature Profile Calculation in Ic Chips

One of the crucial steps in the design of an integrated circuit is the minimization of heating and temperature non-uniformity. Current temperature calculation methods, such as finite element analysis and resistor networks have considerable computation times, making them incompatible for use in routing and placement optimization algorithms. In an effort to reduce the computation time, we have developed a new method, deemed power blurring, for calculating temperature distributions using a matrix convolution technique in analogy with image blurring. For steady state analysis, power blurring was able to predict hot spot temperatures within 1 degree C with computation times 3 orders of magnitude faster than FEA. For transient analysis the computation times where enhanced by a factor of 1000 for a single pulse and around 100 for multiple frequency application, while predicting hot spot temperature within about 1 degree C. The main strength of the power blurring technique is that it exploits the dominant heat spreading in the silicon substrate and it uses superposition principle. With one or two finite element simulations, the temperature point spread function for a sophisticated package can be calculated. Additional simulations could be used to improve the accuracy of the point spread function in different locations on the chip. In this calculation, we considered the dominant heat transfer path through the back of the IC chip and the heat sink. Heat transfer from the top of the chip through metallization layers and the board is usually a small fraction of the total heat dissipation and it is neglected in this analysis.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions