A Process Variation Tolerant Self-Compensation Sense Amplifier Design

As we move under the aegis of the Moore\u27s law, we have to deal with its darker side with problems like leakage and short channel effects. Once we go beyond 45nm regime process variations also have emerged as a significant design concern.Embedded memories uses sense amplifier for fast sensing and typically, sense amplifiers uses pair of matched transistors in a positive feedback environment. A small difference in voltage level of applied input signals to these matched transistors is amplified and the resulting logic signals are latched. Intra die variation causes mismatch between the sense transistors that should ideally be identical structures. Yield loss due to device and process variations has never been so critical to cause failure in circuits. Due to growth in size of embedded SRAMs as well as usage of sense amplifier based signaling techniques, process variations in sense amplifiers leads to significant loss of yield for that we need to come up with process variation tolerant circuit styles and new devices. In this work impact of transistor mismatch due to process variations on sense amplifier is evaluated and this problem is stated. For the solution of the problem a novel self compensation scheme on sense amplifiers is presented on different technology nodes up to 32nm on conventional bulk MOSFET technology. Our results show that the self compensation technique in the conventional bulk MOSFET latch type sense amplifier not just gives improvement in the yield but also leads to improvement in performance for latch type sense amplifiers. Lithography related CD variations, fluctuations in dopant density, oxide thickness and parametric variations of devices are identified as a major challenge to the classical bulk type MOSFET. With the emerging nanoscale devices, SIA roadmap identifies FinFETs as a candidate for post-planar end-of-roadmap CMOS device. With current technology scaling issues and with conventional bulk type MOSFET on 32nm node our technique can easily be applied to Double Gate devices. In this work, we also develop the model of Double Gate MOSFET through 3D Device Simulator Damocles and TCAD simulator. We propose a FinFET based process variation tolerant sense amplifier design that exploits the back gate of FinFET devices for dynamic compensation against process variations. Results from statistical simulation show that the proposed dynamic compensation is highly effective in restoring yield at a level comparable to that of sense amplifiers without process variations. We created the 32nm double gate models generated from Damocles 3-D device simulations [25] and Taurus Device Simulator available commercially from Synopsys [47] and use them in the nominal latch type sense amplifier design and on the Independent Gate Self Compensation Sense Amplifier Design (IGSSA) to compare the yield and performance benefits of sense amplifier design on FinFET technology over the conventional bulk type CMOS based sense amplifier on 32nm technology node effective in restoring yield at a level comparable to that of sense amplifiers without process variations. We created the 32nm double gate models generated from Damocles 3-D device simulations [25] and Taurus Device Simulator available commercially from Synopsys [47] and use them in the nominal latch type sense amplifier design and on the Independent Gate Self Compensation Sense Amplifier Design (IGSSA) to compare the yield and performance benefits of sense amplifier design on FinFET technology over the conventional bulk type CMOS based sense amplifier on 32nm technology node

Low-Power Soft-Error-Robust Embedded SRAM

Soft errors are radiation-induced ionization events (induced by energetic particles like alpha particles, cosmic neutron, etc.) that cause transient errors in integrated circuits. The circuit can always recover from such errors as the underlying semiconductor material is not damaged and hence, they are called soft errors. In nanometer technologies, the reduced node capacitance and supply voltage coupled with high packing density and lack of masking mechanisms are primarily responsible for the increased susceptibility of SRAMs towards soft errors. Coupled with these are the process variations (effective length, width, and threshold voltage), which are prominent in scaled-down technologies. Typically, SRAM constitutes up to 90% of the die in microprocessors and SoCs (System-on-Chip). Hence, the soft errors in SRAMs pose a potential threat to the reliable operation of the system. In this work, a soft-error-robust eight-transistor SRAM cell (8T) is proposed to establish a balance between low power consumption and soft error robustness. Using metrics like access time, leakage power, and sensitivity to single event transients (SET), the proposed approach is evaluated. For the purpose of analysis and comparisons the results of 8T cell are compared with a standard 6T SRAM cell and the state-of-the-art soft-error-robust SRAM cells. Based on simulation results in a 65-nm commercial CMOS process, the 8T cell demonstrates higher immunity to SETs along with smaller area and comparable leakage power. A 32-kb array of 8T cells was fabricated in silicon. After functional verification of the test chip, a radiation test was conducted to evaluate the soft error robustness. As SRAM cells are scaled aggressively to increase the overall packing density, the smaller transistors exhibit higher degrees of process variation and mismatch, leading to larger offset voltages. For SRAM sense amplifiers, higher offset voltages lead to an increased likelihood of an incorrect decision. To address this issue, a sense amplifier capable of cancelling the input offset voltage is presented. The simulated and measured results in 180-nm technology show that the sense amplifier is capable of detecting a 4 mV differential input signal under dc and transient conditions. The proposed sense amplifier, when compared with a conventional sense amplifier, has a similar die area and a greatly reduced offset voltage. Additionally, a dual-input sense amplifier architecture is proposed with corroborating silicon results to show that it requires smaller differential input to evaluate correctly.1 yea

A 128Kb RAM Design with Capacitor-Based Offset Compensation and Double-Diode based Read Assist Circuits at Low VDD

Low power static random access memory (SRAM) takes significant portion of area on chip in all modern SOCs and emerging Computing-in-memory applications for edge devices in IoT. This work proposes novel readability assist with the double-diode based word line under drive (WLUD) has been effective improving the read-static noise-margin (RSNM) by 26–46%and proposed a capacitor based current controlled sense amplifier offset compensation scheme. This scheme achieves 4X reduction in standard deviation of offset voltage over conventional sense amplifier design with 1.1% and 2.9% of area, power overheads respectively with 90 nm CMOS technology at 0.5–1.0 V supply voltages

A 128Kb RAM Design with Capacitor-Based Offset Compensation and Double-Diode based Read Assist Circuits at Low VDD

788-793Low power static random access memory (SRAM) takes significant portion of area on chip in all modern SOCs and emerging Computing-in-memory applications for edge devices in IoT. This work proposes novel readability assist with the double-diode based word line under drive (WLUD) has been effective improving the read-static noise-margin (RSNM) by 26–46%and proposed a capacitor based current controlled sense amplifier offset compensation scheme. This scheme achieves 4X reduction in standard deviation of offset voltage over conventional sense amplifier design with 1.1% and 2.9% of area, power overheads respectively with 90 nm CMOS technology at 0.5–1.0 V supply voltages

SRAM Read-Assist Scheme for Low Power High Performance Applications

Semiconductor technology scaling resulted in a considerable reduction in the transistor cost and an astonishing enhancement in the performance of VLSI (very large scale integration) systems. These nanoscale technologies have facilitated integration of large SRAMs which are now very popular for both processors and system-on-chip (SOC) designs. The density of SRAM array had a quadratic increase with each generation of CMOS technology. However, these nanoscale technologies unveiled few significant challenges to the design of high performance and low power embedded memories. First, process variation has become more significant in these technologies which threaten reliability of sensing circuitry. In order to alleviate this problem, we need to have larger signal swings on the bitlines (BLs) which degrade speed as well as power dissipation. The second challenge is due to the variation in the cell current which will reduce the worst case cell current. Since this cell current is responsible for discharging BLs, this problem will translate to longer activation time for the wordlines (WLs). The longer the WL pulse width is, the more likely is the cell to be unstable. A long WL pulse width can also degrade noise margin. Furthermore, as a result of continuous increase in the size of SRAMs, the BL capacitance has increased significantly which will deteriorate speed as well as power dissipation. The aforementioned problems require additional techniques and treatment such as read-assist techniques to insure fast, low power and reliable read operation in nanoscaled SRAMs. In this research we address these concerns and propose a read-assist sense amplifier (SA) in 65nm CMOS technology that expedites the process of developing differential voltage to be sensed by sense amplifier while reducing voltage swing on the BLs which will result in increased sensing speed, lower power and shorter WL activation time. A complete comparison is made between the proposed scheme, conventional SA and a state of the art design which shows speed improvement and power reduction of 56.1% and 25.9%, respectively over the conventional scheme at the expense of negligible area overhead. Also, the proposed scheme enables us to reduce cell VDD for having the same sensing speed which results in considerable reduction in leakage power dissipation

Project and development of hardware accelerators for fast computing in multimedia processing

2017 - 2018The main aim of the present research work is to project and develop very large scale electronic integrated circuits, with particular attention to the ones devoted to image processing applications and the related topics. In particular, the candidate has mainly investigated four topics, detailed in the following. First, the candidate has developed a novel multiplier circuit capable of obtaining floating point (FP32) results, given as inputs an integer value from a fixed integer range and a set of fixed point (FI) values. The result has been accomplished exploiting a series of theorems and results on a number theory problem, known as Bachet’s problem, which allows the development of a new Distributed Arithmetic (DA) based on 3’s partitions. This kind of application results very fit for filtering applications working on an integer fixed input range, such in image processing applications, in which the pixels are coded on 8 bits per channel. In fact, in these applications the main problem is related to the high area and power consumption due to the presence of many Multiply and Accumulate (MAC) units, also compromising real-time requirements due to the complexity of FP32 operations. For these reasons, FI implementations are usually preferred, at the cost of lower accuracies. The results for the single multiplier and for a filter of dimensions 3x3 show respectively delay of 2.456 ns and 4.7 ns on FPGA platform and 2.18 ns and 4.426 ns on 90nm std_cell TSMC 90 nm implementation. Comparisons with state-of-the-art FP32 multipliers show a speed increase of up to 94.7% and an area reduction of 69.3% on FPGA platform. ... [edited by Author]XXXI cicl

A 300mV 10MHz 4kb 10T Subthreshold SRAM for Ultralow-Power Application

[[notice]]缺頁數[[conferencetype]]國際[[conferencedate]]20121104~20121107[[booktype]]電子版[[iscallforpapers]]Y[[conferencelocation]]New Taipei City, Taiwa

A 0.3V 1kb Sub-Threshold SRAM for Ultra-Low-Power Application in 90nm CMOS

[[notice]]缺頁數[[conferencetype]]國際[[conferencedate]]20120715~20120718[[booktype]]電子版[[iscallforpapers]]Y[[conferencelocation]]Sapporo, Japa

U-DVS SRAM design considerations

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.Includes bibliographical references (leaves 73-78).With the continuous scaling down of transistor feature sizes, the semiconductor industry faces new challenges. One of these challenges is the incessant increase of power consumption in integrated circuits. This problem has motivated the industry and academia to pay significant attention to low-power circuit design for the past two decades. Operating digital circuits at lower voltage levels was shown to increase energy efficiency and lower power consumption. Being an integral part of the digital systems, Static Random Access Memories (SRAMs), dominate the power consumption and area of modern integrated circuits. Consequently, designing low-power high density SRAMs operational at low voltage levels is an important research problem. This thesis focuses on and makes several contributions to low-power SRAM design. The trade-offs and potential overheads associated with designing SRAMs for a very large voltage range are analyzed. An 8T SRAM cell is designed and optimized for both sub-threshold and above-threshold operation. Hardware reconfigurability is proposed as a solution to power and area overheads due to peripheral assist circuitry which are necessary for low voltage operation. A 64kbit SRAM has been designed in 65nm CMOS process and the fabricated chip has been tested, demonstrating operation at power supply levels from 0.25V to 1.2V. This is the largest operating voltage range reported in 65nm semiconductor technology node. Additionally, another low voltage SRAM has been designed for the on-chip caches of a low-power H.264 video decoder. Power and performance models of the memories have been developed along with a configurable interface circuit. This custom memory implemented with the low-power architecture of the decoder provides nearly 10X power savings.by Mahmut E. Sinangil.S.M