Detecting Neutral Atoms on an Atom Chip

Detecting single atoms (qubits) is a key requirement for implementing quantum information processing on an atom chip. The detector should ideally be integrated on the chip. Here we present and compare different methods capable of detecting neutral atoms on an atom chip. After a short introduction to fluorescence and absorption detection we discuss cavity enhanced detection of single atoms. In particular we concentrate on optical fiber based detectors such as fiber cavities and tapered fiber dipole traps. We discuss the various constraints in building such detectors in detail along with the current implementations on atom chips. Results from experimental tests of fiber integration are also described. In addition we present a pilot experiment for atom detection using a concentric cavity to verify the required scaling.Comment: 13 pages, 12 figure

Tuning the exponential sensitivity of a bound-state-in-continuum optical sensor.

In this work, we investigate the evanescent field sensing mechanism provided by an all-dielectric metasurface supporting bound states in the continuum (BICs). The metasurface is based on a transparent photonic crystal with subwavelength thickness. The BIC electromagnetic field is localized along the direction normal to the photonic crystal nanoscale-thin slab (PhCS) because of a topology-induced confinement, exponentially decaying in the material to detect. On the other hand, it is totally delocalized in the PhCS plane, which favors versatile and multiplexing sensing schemes. Liquids with different refractive indices, ranging from 1.33 to 1.45, are infiltrated in a microfluidic chamber bonded to the sensing dielectric metasurface. We observe an experimental exponential sensitivity leading to differential values as large as 226 nm/RIU with excellent FOM. This behavior is explained in terms of the physical superposition of the field with the material under investigation and supported by a thorough numerical analysis. The mechanism is then translated to the case of molecular adsorption where a suitable theoretical engineering of the optical structure points out potential sensitivities as large as 4000 nm/RIU

Effective electrothermal analysis of electronic devices and systems with parameterized macromodeling

We propose a parameterized macromodeling methodology to effectively and accurately carry out dynamic electrothermal (ET) simulations of electronic components and systems, while taking into account the influence of key design parameters on the system behavior. In order to improve the accuracy and to reduce the number of computationally expensive thermal simulations needed for the macromodel generation, a decomposition of the frequency-domain data samples of the thermal impedance matrix is proposed. The approach is applied to study the impact of layout variations on the dynamic ET behavior of a state-of-the-art 8-finger AlGaN/GaN high-electron mobility transistor grown on a SiC substrate. The simulation results confirm the high accuracy and computational gain obtained using parameterized macromodels instead of a standard method based on iterative complete numerical analysis

Energy resolution and efficiency of phonon-mediated Kinetic Inductance Detectors for light detection

The development of sensitive cryogenic light detectors is of primary interest for bolometric experiments searching for rare events like dark matter interactions or neutrino-less double beta decay. Thanks to their good energy resolution and the natural multiplexed read-out, Kinetic Inductance Detectors (KIDs) are particularly suitable for this purpose. To efficiently couple KIDs-based light detectors to the large crystals used by the most advanced bolometric detectors, active surfaces of several cm$^2$ are needed. For this reason, we are developing phonon-mediated detectors. In this paper we present the results obtained with a prototype consisting of four 40 nm thick aluminum resonators patterned on a 2$\times$2 cm$^2$ silicon chip, and calibrated with optical pulses and X-rays. The detector features a noise resolution $\sigma_E=154\pm7$ eV and an (18$\pm$2)$\%$ efficiency.Comment: 5 pages, 5 figure

Compact modelling in RF CMOS technology

With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years. Today, the standard CMOS technology has become a popular choice for realizing radio frequency (RF) applications. The focus of the thesis is on device compact modelling methodologies in RF CMOS. Compact models oriented to integrated circuit (ICs) computer automatic design (CAD) are the key component of a process design kit (PDK) and the bridge between design houses and foundries. In this work, a novel substrate model is proposed for accurately characterizing the behaviour of RF-MOSFETs with deep n-wells (DNW). A simple test structure is presented to directly access the substrate parasitics from two-port measurements in DNWs. The most important passive device in RFIC design in CMOS is the spiral inductor. A 1-pi model with a novel substrate network is proposed to characterize the broadband loss mechanisms of spiral inductors. Based on the proposed 1-pi model, a physics-originated fully-scalable 2-pi model and model parameter extraction methodology are also presented for spiral inductors in this work. To test and verify the developed active and passive device models and model parameter extraction methods, a series of RF-MOSFETs and planar on-chip spiral inductors with different geometries manufactured by employing standard RF CMOS processes were considered. Excellent agreement between the measured and the simulated results validate the compact models and modelling technologies developed in this work