Novel Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications

In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor (FET) structure. This planar device is based on our previously published Si-nanowire (SiNW) technology. Schottky barrier source/drain (S/D) contacts and a silicon-on-insulator (SOI) technology platform are the key features of this dual-gated but single channel universal FET. The combination of two electrically independent gates, one back-gate for S/D Schottky barrier modulation as well as channel formation to establish Schottky barrier FET (SBFET) operation and one front-gate forming a junctionless FET (JLFET) for actual current control, significantly increases the temperature robustness of the device.Comment: 18 pages, 11 figure

Resonant Visible Light Modulation with Graphene

Fast modulation and switching of light at visible and near-infrared (vis-NIR) frequencies is of utmost importance for optical signal processing and sensing technologies. No fundamental limit appears to prevent us from designing wavelength-sized devices capable of controlling the light phase and intensity at gigaherts (and even terahertz) speeds in those spectral ranges. However, this problem remains largely unsolved, despite recent advances in the use of quantum wells and phase-change materials for that purpose. Here, we explore an alternative solution based upon the remarkable electro-optical properties of graphene. In particular, we predict unity-order changes in the transmission and absorption of vis-NIR light produced upon electrical doping of graphene sheets coupled to realistically engineered optical cavities. The light intensity is enhanced at the graphene plane, and so is its absorption, which can be switched and modulated via Pauli blocking through varying the level of doping. Specifically, we explore dielectric planar cavities operating under either tunneling or Fabry-Perot resonant transmission conditions, as well as Mie modes in silicon nanospheres and lattice resonances in metal particle arrays. Our simulations reveal absolute variations in transmission exceeding 90% as well as an extinction ratio >15 dB with small insertion losses using feasible material parameters, thus supporting the application of graphene in fast electro-optics at vis-NIR frequencies.Comment: 17 pages, 13 figures, 54 reference

Electrostatically driven vacuum-encapsulated polysilicon resonators part I. design and fabrication

Basic design issues and a fabrication process based on surface-micromachining techniques for electrostatically driven vacuum-encapsulated polysilicon resonators are presented. A novel freeze-drying method that does not require vacuum equipment is presented. Reactive sealing with LPCVD silicon nitride is used to create the evacuated cavity, resulting in cavity pressures close to the deposition pressure. Design issues regarding choice of materials, technology and layout are discussed. First experimental results, including an admittance plot of the one-port resonator and a plot indicating the dependence of the Q-factor on the resonator geometry and ambient pressure, are presented

Stretching the limits of dynamic range, shielding effectiveness, and multiband frequency response

In this dissertation, an RF MEMS variable capacitor suitable for applications requiring ultrawide capacitive tuning ranges is reported. The device uses an electrostatically tunable liquid dielectric interface to continuously vary the capacitance without the use of any moving parts. As compared to existing MEMS varactors in literature, this device has an extremely simple design that can be implemented using simple fabrication methods that do not necessitate the use of clean room equipment. In addition, this varactor is particularly suited for incorporating a wide range of liquid dielectric materials for specific tuning ratio requirements. Additionally, the shielding effectiveness performance of graphene-doped ABS thin films is investigated. The use of graphene as a replacement for metal fillers in composite EMI shielding materials is quickly becoming a widely-investigated field in the electromagnetic compatibility community. By replacing conventional metal-based shielding methods with graphene-doped polymers, low-weight, field-use temporary shielding enclosures can be implemented that do not suffer from mechanical unreliability and corrosion/oxidation like a traditional metal enclosure. While the performance of composite EMI shielding materials has not yet surpassed metals, the advantages of polymer-based shielding methods could find usage in a variety of applications. Finally, mutliband pre-fractal antennas fabricated via 3D printing are reported. These devices are the first to incorporate the advantages of 3D printing (rapid prototyping, fabrication of complex geometries otherwise unobtainable) with the advantages of self-similar antennas (increased gain and multiband performance) in a single device. The Sierpinski tetrahedron-based antenna design was both computationally modeled and physically realized to illustrate its potential as a solution to enable true multiband communication platforms

Design and Fabrication of Electrostatically Actuated Serpentine-Hinged Nickel-Phosphorous Micromirror Devices

A process for micromachining of micro-mirror devices from silicon-on-insulator wafers was proposed and implemented. Test methods and force applicators for these devices were developed. Following successful fabrication of these devices, a novel process for fabrication of devices out of the plane of the silicon wafer was proposed, so that the devices could be actuated electrostatically. In particular, the process makes use of thick photoresist layers as a sacrificial mold into which an amorphous nickel-phosphorous alloy may be deposited. Ideal design of the electrostatically actuated micro-mirrors was investigated, and a final design was selected and modeled using FEA software, which found that serpentine-hinged devices require approximately 33% of the actuation force of their straight-beamed counterparts. An aqueous electroless plating solution composed of nickel acetate, sodium hypophosphite, citric acid, ammonium acetate, and Triton X-100 in was developed for use with the process, and bath operating parameters of 85°C and 4.5 pH were determined. However, this electroless solution failed to deposit in the presence of the photoresist. Several mechanisms proposed for deposition failure included leaching of organic solvents from the photoresist, oxidation of the nickel-titanium seed layer on which the deposition was intended to occur, and nonlinear diffusion of dissolved oxygen in the solution

Surface micromachined mechanisms and micromotors

Electric micromotors are sub-millimeter sized actuators capable of unrestrained motion in at least one degree of freedom. Polysilicon surface micromachining using heavily phosphorus-doped LPCVD polysilicon for the structural material, LPCVD silicon nitride for the electrical isolation and deposited silicon dioxide for the sacrificial material has formed the fabrication technology base for the development of these micromotors. Two polysilicon surface micromachining processes, referred to here as the center-pin and flange, have been demonstrated for the fabrication of passive mechanisms and micromotors. Passive mechanisms such as gear trains, cranks and manipulators have been implemented on silicon. Reported operational micromotors have been of the rotary variable-capacitance salient-pole and harmonic (or wobble) side-drive designs. These micromotors are capable of motive torques in the 10 pN m order of magnitude range. Preliminary progress has been made in studying the operational, friction and wear characteristics of these micromechanical devices. Typical operational voltages have been as low as 37 V and 26 V across 1.5 mu m air gap salient-pole and harmonic micromotors. These excitations correspond to electric field intensities above 10(8) Vm-1 in the micromotor air gaps. Salient-pole and wobble micromotors have been reported to operate at speeds as high as 15000 rpm and 700 rpm, respectively. Micromotor lifetimes of at least many millions of cycles over a period of several days have been reported

Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook

Two-dimensional (2D) semiconductors provide a unique opportunity for optoelectronics due to their layered atomic structure, electronic and optical properties. To date, a majority of the application-oriented research in this field has been focused on field-effect electronics as well as photodetectors and light emitting diodes. Here we present a perspective on the use of 2D semiconductors for photovoltaic applications. We discuss photonic device designs that enable light trapping in nanometer-thickness absorber layers, and we also outline schemes for efficient carrier transport and collection. We further provide theoretical estimates of efficiency indicating that 2D semiconductors can indeed be competitive with and complementary to conventional photovoltaics, based on favorable energy bandgap, absorption, external radiative efficiency, along with recent experimental demonstrations. Photonic and electronic design of 2D semiconductor photovoltaics represents a new direction for realizing ultrathin, efficient solar cells with applications ranging from conventional power generation to portable and ultralight solar power.Comment: 4 figure