Nasics: A `Fabric-Centric\u27 Approach Towards Integrated Nanosystems

This dissertation addresses the fundamental problem of how to build computing systems for the nanoscale. With CMOS reaching fundamental limits, emerging nanomaterials such as semiconductor nanowires, carbon nanotubes, graphene etc. have been proposed as promising alternatives. However, nanoelectronics research has largely focused on a `device-first\u27 mindset without adequately addressing system-level capabilities, challenges for integration and scalable assembly. In this dissertation, we propose to develop an integrated nano-fabric, (broadly defined as nanostructures/devices in conjunction with paradigms for assembly, inter-connection and circuit styles), as opposed to approaches that focus on MOSFET replacement devices as the ultimate goal. In the `fabric-centric\u27 mindset, design choices at individual levels are made compatible with the fabric as a whole and minimize challenges for nanomanufacturing while achieving system-level benefits vs. scaled CMOS. We present semiconductor nanowire based nano-fabrics incorporating these fabric-centric principles called NASICs and N3ASICs and discuss how we have taken them from initial design to experimental prototype. Manufacturing challenges are mitigated through careful design choices at multiple levels of abstraction. Regular fabrics with limited customization mitigate overlay alignment requirements. Cross-nanowire FET devices and interconnect are assembled together as part of the uniform regular fabric without the need for arbitrary fine-grain interconnection at the nanoscale, routing or device sizing. Unconventional circuit styles are devised that are compatible with regular fabric layouts and eliminate the requirement for using complementary devices. Core fabric concepts are introduced and validated. Detailed analyses on device-circuit co-design and optimization, cascading, noise and parameter variation are presented. Benchmarking of nanowire processor designs vs. equivalent scaled 16nm CMOS shows up to 22X area, 30X power benefits at comparable performance, and with overlay precision that is achievable with present-day technology. Building on the extensive manufacturing-friendly fabric framework, we present recent experimental efforts and key milestones that have been attained towards realizing a proof-of-concept prototype at dimensions of 30nm and below

Thermal Characterization of Next-Generation Workloads on Heterogeneous MPSoCs

Next-generation High-Performance Computing (HPC) applications need to tackle outstanding computational complexity while meeting latency and Quality-of-Service constraints. Heterogeneous Multi-Processor Systems-on-Chip (MPSoCs), equipped with a mix of general-purpose cores and reconfigurable fabric for custom acceleration of computational blocks, are key in providing the flexibility to meet the requirements of next-generation HPC. However, heterogeneity brings new challenges to efficient chip thermal management. In this context, accurate and fast thermal simulators are becoming crucial to understand and exploit the trade-offs brought by heterogeneous MPSoCs. In this paper, we first thermally characterize a next-generation HPC workload, the online video transcoding application, using a highly-accurate Infra-Red (IR) microscope. Second, we extend the 3D-ICE thermal simulation tool with a new generic heat spreader model capable of accurately reproducing package surface temperature, with an average error of 6.8% for the hot spots of the chip. Our model is used to characterize the thermal behaviour of the online transcoding application when running on a heterogeneous MPSoC. Moreover, by using our detailed thermal system characterization we are able to explore different application mappings as well as the thermal limits of such heterogeneous platforms

Modeling Power Consumption and Temperature in TLM Models

International audienceMany techniques and tools exist to estimate the power consumption and the temperature map of a chip. These tools help the hardware designers develop power efficient chips in the presence of temperature constraints. For this task, the application can be ignored or at least abstracted by some high level scenarios; at this stage, the actual embedded software is generally not available yet. However, after the hardware is defined, the embedded software can still have a significant influence on the power consumption; i.e., two implementations of the same application can consume more or less power. Moreover, the actual software powe

Reliability-Aware Design for Nanometer-Scale Devices, January 2008

Continuous transistor scaling due to improvements in CMOS devices and manufacturing technologies is increasing processor power densities and temperatures; thus, creating challenges to maintain manufacturing yield rates and reliable devices in their expected lifetimes for latest nanometer-scale dimensions. In fact, new system and processor microarchitectures require new reliability-aware design methods and exploration tools that can face these challenges without significantly increasing manufacturing cost, reducing system performance or imposing large area overheads due to redundancy. In this paper we overview the latest approaches in reliability modeling and variability-tolerant design for latest technology nodes, and advocate the need of reliability-aware design for forthcoming consumer electronics. Moreover, we illustrate with a case study of an embedded processor that effec- tive reliability-aware design can be achieved in nanometer-scale devices through integral design approaches that covers modeling and exploration of reliability effects, and hardware-software architectural techniques to provide reliability-enhanced solutions at both microarchitectural- and system-level

Modeling DVFS and Power-Gating Actuators for Cycle-Accurate NoC-Based Simulators

Networks-on-chip (NoCs) are a widely recognized viable interconnection paradigm to support the multi-core revolution. One of the major design issues of multicore architectures is still the power, which can no longer be considered mainly due to the cores, since the NoC contribution to the overall energy budget is relevant. To face both static and dynamic power while balancing NoC performance, different actuators have been exploited in literature, mainly dynamic voltage frequency scaling (DVFS) and power gating. Typically, simulation-based tools are employed to explore the huge design space by adopting simplified models of the components. As a consequence, the majority of state-of-the-art on NoC power-performance optimization do not accurately consider timing and power overheads of actuators, or (even worse) do not consider them at all, with the risk of overestimating the benefits of the proposed methodologies. This article presents a simulation framework for power-performance analysis of multicore architectures with specific focus on the NoC. It integrates accurate power gating and DVFS models encompassing also their timing and power overheads. The value added of our proposal is manyfold: (i) DVFS and power gating actuators are modeled starting from SPICE-level simulations; (ii) such models have been integrated in the simulation environment; (iii) policy analysis support is plugged into the framework to enable assessment of different policies; (iv) a flexible GALS (globally asynchronous locally synchronous) support is provided, covering both handshake and FIFO re-synchronization schemas. To demonstrate both the flexibility and extensibility of our proposal, two simple policies exploiting the modeled actuators are discussed in the article

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Multi-objective optimization for building retrofit: a model using genetic algorithm and artificial neural network and an application

Retrofitting of existing buildings offers significant opportunities for improving occupants’ comfort and well-being, reducing global energy consumption and greenhouse gas emissions. This is being considered as one of the main approaches to achieve sustainability in the built environment at relatively low cost and high uptake rates. Although a wide range of retrofit technologies is readily available, methods to identify the most suitable set of retrofit actions for particular projects are still a major technical and methodological challenge. This paper presents a multi-objective optimization model using genetic algorithm (GA) and artificial neural network (ANN) to quantitatively assess technology choices in a building retrofit project. This model combines the rapidity of evaluation of ANNs with the optimization power of GAs. A school building is used as a case study to demonstrate the practicability of the proposed approach and highlight potential problems that may arise. The study starts with the individual optimization of objective functions focusing on building's characteristics and performance: energy consumption, retrofit cost, and thermal discomfort hours. Then a multi-objective optimization model is developed to study the interaction between these conflicting objectives and assess their trade-offs

An Experimental Study of Reduced-Voltage Operation in Modern FPGAs for Neural Network Acceleration

We empirically evaluate an undervolting technique, i.e., underscaling the circuit supply voltage below the nominal level, to improve the power-efficiency of Convolutional Neural Network (CNN) accelerators mapped to Field Programmable Gate Arrays (FPGAs). Undervolting below a safe voltage level can lead to timing faults due to excessive circuit latency increase. We evaluate the reliability-power trade-off for such accelerators. Specifically, we experimentally study the reduced-voltage operation of multiple components of real FPGAs, characterize the corresponding reliability behavior of CNN accelerators, propose techniques to minimize the drawbacks of reduced-voltage operation, and combine undervolting with architectural CNN optimization techniques, i.e., quantization and pruning. We investigate the effect of environmental temperature on the reliability-power trade-off of such accelerators. We perform experiments on three identical samples of modern Xilinx ZCU102 FPGA platforms with five state-of-the-art image classification CNN benchmarks. This approach allows us to study the effects of our undervolting technique for both software and hardware variability. We achieve more than 3X power-efficiency (GOPs/W) gain via undervolting. 2.6X of this gain is the result of eliminating the voltage guardband region, i.e., the safe voltage region below the nominal level that is set by FPGA vendor to ensure correct functionality in worst-case environmental and circuit conditions. 43% of the power-efficiency gain is due to further undervolting below the guardband, which comes at the cost of accuracy loss in the CNN accelerator. We evaluate an effective frequency underscaling technique that prevents this accuracy loss, and find that it reduces the power-efficiency gain from 43% to 25%.Comment: To appear at the DSN 2020 conferenc