Accelerating Electromigration Aging: Fast Failure Detection for Nanometer ICs

For practical testing and detection of electromigration (EM) induced failures in dual damascene copper interconnects, one critical issue is creating stressing conditions to induce the chip to fail exclusively under EM in a very short period of time so that EM sign-off and validation can be carried out efficiently. Existing acceleration techniques, which rely on increasing temperature and current densities beyond the known limits, also accelerate other reliability effects making it very difficult, if not impossible, to test EM in isolation. In this article, we propose novel EM wear-out acceleration techniques to address the aforementioned issue. First we show that multi-segment interconnects with reservoir and sink structures can be exploited to significantly speedup the EM wear-out process. Based on this observation, we propose three strategies to accelerate EM induced failure: reservoir-enhanced acceleration, sink-enhanced acceleration, and a hybrid method that combines both reservoir and sink structures. We then propose several configurable interconnect structures that exploit atomic reservoirs and sinks for accelerated EM testing. Such configurable interconnect structures are very flexible and can be used to achieve significant lifetime reductions at the cost of some routing resources. Using the proposed technique, EM testing can be carried out at nominal current densities, and at a much lower temperature compared to traditional testing methods. This is the most significant contribution of this work since, to our knowledge, this is the only method that allows EM testing to be performed in a controlled environment without the risk of invoking other reliability effects that are also accelerated by elevated temperature and current density. Simulation results show that, using the proposed method, we can reduce the EM lifetime of a chip from 10 years down to a few hours 10^5X acceleration under the 150C temperature limit, which is sufficient for practical EM testing of typical nanometer CMOS ICs

An Electromigration and Thermal Model of Power Wires for a Priori High-Level Reliability Prediction

In this paper, a simple power-distribution electrothermal model including the interconnect self-heating is used together with a statistical model of average and rms currents of functional blocks and a high-level model of fanout distribution and interconnect wirelength. Following the 2001 SIA roadmap projections, we are able to predict a priori that the minimum width that satisfies the electromigration constraints does not scale like the minimum metal pitch in future technology nodes. As a consequence, the percentage of chip area covered by power lines is expected to increase at the expense of wiring resources unless proper countermeasures are taken. Some possible solutions are proposed in the paper

Physics-Based Electromigration Modeling and Analysis and Optimization

Long-term reliability is a major concern in modern VLSI design. Literature has shown that reliability gets worse as technology advances. It is expected that the future VLSI systems would have shorter reliability-induced lifetime comparing with previous generations. Being one of the most serious reliability effects, electromigration (EM) is a physical phenomenon of the migration of metal atoms due to the momentum exchange between atoms and the conducting electrons. It can cause wire resistance change or open circuit and result in functional failure of the circuit. Power-ground networks are the most vulnerable part to EM effect among all the interconnect wires since the current flow on this part is the largest on the chip. With new generation oftechnology node and aggressive design strategies, more accurate and efficient EM models are required. However, traditional EM approaches are very conservative and cannot meet current aggressive design strategies. Besides circuit level, EM also need to be thoroughly studied in system level due to limited power and temperature budgets among cores on chip. This research focuses on developing physical level EM model for VLSI circuits and system level EM optimization for multi-core systems in order to overcome the aforementioned problems. Specifically, for physical level, we develop two EM immortality check methods and a power grid EM check method. Firstly, a voltage based EM immortality analysis has been developed. Immortality condition in nucleation phase can be determined fast and accurately for multi-segment interconnect wires. Secondly, a saturation volume based incubation phase immortality check method has been proposed. This method can further reduce the redundancy in VLSI circuit design by immortality check in multiphase. Furthermore, both immortality check methods are integrated into a new power grid EM check methodology (EMspice) as filter for EM analysis. These filters can accelerate the simulation by filtering out immortal trees so that we only need to do simulation on fewer trees that are mortal. Coupled EM simulation considering both hydrostatic stress and electronic current/voltage in the power grid network will be applied to these mortal trees. This tool can work seamlessly with commercial synthesis flow. Besides physical level reliability models, system level reliability optimization is also discussed in this research. A deep reinforcement learning based EM optimization has been proposed for multi-core system. Both long term reliability effect (hard error) and transient soft error are considered. Energy can be optimized with all the reliability and other constraints fast and accurately compared to existing reliability management techniques. Last but not least, a scheduling based reliability optimization method for multi-core systems has been proposed. NBTI, HCI and EM are considered jointly. Lifetime of the system can be improved significantly compared to traditional methods which mainly focus on utilization

Electromigration modeling and layout optimization for advanced VLSI

textElectromigration (EM) is a critical problem for interconnect reliability in advanced VLSI design. Because EM is a strong function of current density, a smaller cross-sectional area of interconnects can degrade the EM-related lifetime of IC, which is expected to become more severe in future technology nodes. Moreover, as EM is governed by various factors such as temperature, material property, geometrical shape, and mechanical stress, different interconnect structures can have distinct EM issues and solutions to mitigate them. For example, one of the most prominent technologies, die stacking technology of three-dimensional (3D) ICs, can have different EM problems from that of planer ICs, due to their unique interconnects such as through-silicon vias (TSVs). This dissertation investigates EM in various interconnect structures, and applies the EM models to optimize IC layout. First, modeling of EM is developed for chip-level interconnects, such as wires, local vias, TSVs, and multi-scale vias (MSVs). Based on the models, fast and accurate EM-prediction methods are proposed for the chip-level designs. After that, by utilizing the EM-prediction methods, the layout optimization methods are suggested, such as EM-aware routing for 3D ICs and EM-aware redundant via insertion for the future technology nodes in VLSI. Experimental results show that the proposed EM modeling approaches enable fast and accurate EM evaluation for chip design, and the EM-aware layout optimization methods improve EM-robustness of advanced VLSI designs.Electrical and Computer Engineerin

Simulation for Reliability, Hardware Security, and Ising Computing in VLSI Chip Design

The continued scaling of VLSI circuits has provided a wealth of opportunities andchallenges to the VLSI circuit design area. Both these challenges and opportunities, however,require new simulation tools that can enable their solution or exploitation as classicalmethods typically dealt with problem domains with smaller scales or less complexity. Inthis dissertation, simulation methods are presented to address the emerging VLSI designtopics of Electromigration induced aging and Ising computing and are then applied to theapplication areas of hardware security and graph partitioning respectively.The Electromigration aging effect in VLSI circuits is a long-term reliability issueaffecting current carrying metal wires leading to IR drop degradation. Typically, simpleanalytical equations can determine a wire’s effective age or if it will be affected by the EMaging effect at all. However, these classical methods are overly conservative and can lead toover design or unnecessary design iterations. Furthermore, it is expected that the EM agingeffect will become more severe in future Integrated Cirucits (ICs) due to increasing currentdensities and the prevalance of polycrystaline copper atom structures seen at small wiredimensions. For this reason, more comprehensive simulation techniques that can efficientlysimulate the EM effect with less conservative results can help mitigate overdesign andincrease design margins while reducing design iterations.The area of Hardware Security is becoming increasingly important as the chipsupply chain becomes more globalized and the integrity of chips becomes more diffiuclt toverify. Utilizing the accurate simulation techniques for EM, we can utilize this reliabilityeffect to demonstrate how a reliability based attack could be perpatrated. Furthermore, wecan utilize this aging effect as a defense mechanism to help us validate the integrity of anIC and detect counterfeit chips in the component supply chain market.Ising computing is an emerging method of solving combinatorial optimization problemsby simulating the interactions of so-called spin glasses and their interactions. Borrowingconcepts from quantum computing, this methods mimics the quantum interaction betweenspin glasses in such a way that finding a ground state of these spin glass models leadsto the solution of a particular problem. In this dissertation, effective methods of simulatingthe spin glass interactions using General Purpose Graphics Processing Units (GPGPUs)and finding their ground state are developed.In addition to the GPU based Ising model simulations, important combinatorialproblems can be mapped to the Ising model. In this dissertation the Ising solver is appliedto graph partitioning which can be utilized in VLSI design and many other domains as well.Specifically, solvers for the maxcut problem and the balanced min-cut partitioning problemare developed

Constraint-Aware, Scalable, and Efficient Algorithms for Multi-Chip Power Module Layout Optimization

Moving towards an electrified world requires ultra high-density power converters. Electric vehicles, electrified aerospace, data centers, etc. are just a few fields among wide application areas of power electronic systems, where high-density power converters are essential. As a critical part of these power converters, power semiconductor modules and their layout optimization has been identified as a crucial step in achieving the maximum performance and density for wide bandgap technologies (i.e., GaN and SiC). New packaging technologies are also introduced to produce reliable and efficient multichip power module (MCPM) designs to push the current limits. The complexity of the emerging MCPM layouts is surpassing the capability of a manual, iterative design process to produce an optimum design with agile development requirements. An electronic design automation tool called PowerSynth has been introduced with ongoing research toward enhanced capabilities to speed up the optimized MCPM layout design process. This dissertation presents the PowerSynth progression timeline with the methodology updates and corresponding critical results compared to v1.1. The first released version (v1.1) of PowerSynth demonstrated the benefits of layout abstraction, and reduced-order modeling techniques to perform rapid optimization of the MCPM module compared to the traditional, manual, and iterative design approach. However, that version is limited by several key factors: layout representation technique, layout generation algorithms, iterative design-rule-checking (DRC), optimization algorithm candidates, etc. To address these limitations, and enhance PowerSynth’s capabilities, constraint-aware, scalable, and efficient algorithms have been developed and implemented. PowerSynth layout engine has evolved from v1.3 to v2.0 throughout the last five years to incorporate the algorithm updates and generate all 2D/2.5D/3D Manhattan layout solutions. These fundamental changes in the layout generation methodology have also called for updates in the performance modeling techniques and enabled exploring different optimization algorithms. The latest PowerSynth 2 architecture has been implemented to enable electro-thermo-mechanical and reliability optimization on 2D/2.5D/3D MCPM layouts, and set up a path toward cabinet-level optimization. PowerSynth v2.0 computer-aided design (CAD) flow has been hardware-validated through manufacturing and testing of an optimized novel 3D MCPM layout. The flow has shown significant speedup compared to the manual design flow with a comparable optimization result

End-of-Life and Constant Rate Reliability Modeling for Semiconductor Packages Using Knowledge-Based Test Approaches

End-of-life and constant rate reliability modeling for semiconductor packages are the focuses of this dissertation. Knowledge-based testing approaches are applied and the test-to-failure approach is approved to be a reliable approach. First of all, the end-of-life AF models for solder joint reliability are studied. The research results show using one universal AF model for all packages is flawed approach. An assessment matrix is generated to guide the application of AF models. The AF models chosen should be either assessed based on available data or validated through accelerated stress tests. A common model can be applied if the packages have similar structures and materials. The studies show that different AF models will be required for SnPb solder joints and SAC lead-free solder joints. Second, solder bumps under power cycling conditions are found to follow constant rate reliability models due to variations of the operating conditions. Case studies demonstrate that a constant rate reliability model is appropriate to describe non solder joint related semiconductor package failures as well. Third, the dissertation describes the rate models using Chi-square approach cannot correlate well with the expected failure mechanisms in field applications. The estimation of the upper bound using a Chi-square value from zero failure is flawed. The dissertation emphasizes that the failure data is required for the failure rate estimation. A simple but tighter approach is proposed and provides much tighter bounds in comparison of other approaches available. Last, the reliability of solder bumps in flip chip packages under power cycling conditions is studied. The bump materials and underfill materials will significantly influence the reliability of the solder bumps. A set of comparable bump materials and the underfill materials will dramatically improve the end-of-life solder bumps under power cycling loads, and bump materials are one of the most significant factors. Comparing to the field failure data obtained, the end-of-life model does not predict the failures in the field, which is more close to an approximately constant failure rate. In addition, the studies find an improper underfill material could change the failure location from solder bump cracking to ILD cracking or BGA solder joint failures

Effective network grid synthesis and optimization for high performance very large scale integration system design

制度:新 ; 文部省報告番号:甲2642号 ; 学位の種類:博士(工学) ; 授与年月日:2008/3/15 ; 早大学位記番号:新480