5,083 research outputs found
Coherent modulation up to 100 GBd 16QAM using silicon-organic hybrid (SOH) devices
We demonstrate the generation of higher-order modulation formats using
silicon-based inphase/quadrature (IQ) modulators at symbol rates of up to 100
GBd. Our devices exploit the advantages of silicon-organic hybrid (SOH)
integration, which combines silicon-on-insulator waveguides with highly
efficient organic electro-optic (EO) cladding materials to enable small drive
voltages and sub-millimeter device lengths. In our experiments, we use an SOH
IQ modulator with a {\pi}-voltage of 1.6 V to generate 100 GBd 16QAM signals.
This is the first time that the 100 GBd mark is reached with an IQ modulator
realized on a semiconductor substrate, leading to a single-polarization line
rate of 400 Gbit/s. The peak-to-peak drive voltages amount to 1.5 Vpp,
corresponding to an electrical energy dissipation in the modulator of only 25
fJ/bit
Silicon-Organic Hybrid (SOH) Mach-Zehnder Modulators for 100 Gbit/s On-Off Keying
Electro-optic modulators for high-speed on-off keying (OOK) are key
components of short- and mediumreach interconnects in data-center networks.
Besides small footprint and cost-efficient large-scale production, small drive
voltages and ultra-low power consumption are of paramount importance for such
devices. Here we demonstrate that the concept of silicon-organic hybrid (SOH)
integration is perfectly suited for meeting these challenges. The approach
combines the unique processing advantages of large-scale silicon photonics with
unrivalled electro-optic (EO) coefficients obtained by molecular engineering of
organic materials. In our proof-of-concept experiments, we demonstrate
generation and transmission of OOK signals with line rates of up to 100 Gbit/s
using a 1.1 mm-long SOH Mach-Zehnder modulator (MZM) which features a
{\pi}-voltage of only 0.9 V. This experiment represents not only the first
demonstration of 100 Gbit/s OOK on the silicon photonic platform, but also
leads to the lowest drive voltage and energy consumption ever demonstrated at
this data rate for a semiconductor-based device. We support our experimental
results by a theoretical analysis and show that the nonlinear transfer
characteristic of the MZM can be exploited to overcome bandwidth limitations of
the modulator and of the electric driver circuitry. The devices are fabricated
in a commercial silicon photonics line and can hence be combined with the full
portfolio of standard silicon photonic devices. We expect that high-speed
power-efficient SOH modulators may have transformative impact on short-reach
optical networks, enabling compact transceivers with unprecedented energy
efficiency that will be at the heart of future Ethernet interfaces at Tbit/s
data rates
Electrically packaged silicon-organic hybrid (SOH) I/Q-modulator for 64 GBd operation
Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small
footprint with low operating voltage and hence low power dissipation, thus
lending themselves to on-chip integration of large-scale device arrays. Here we
demonstrate an electrical packaging concept that enables high-density
radio-frequency (RF) interfaces between on-chip SOH devices and external
circuits. The concept combines high-resolution
printed-circuit boards with technically simple metal wire bonds and is amenable
to packaging of device arrays with small on-chip bond pad pitches. In a set of
experiments, we characterize the performance of the underlying RF building
blocks and we demonstrate the viability of the overall concept by generation of
high-speed optical communication signals. Achieving line rates (symbols rates)
of 128 Gbit/s (64 GBd) using quadrature-phase-shiftkeying (QPSK) modulation and
of 160 Gbit/s (40 GBd) using 16-state quadrature-amplitudemodulation (16QAM),
we believe that our demonstration represents an important step in bringing SOH
modulators from proof-of-concept experiments to deployment in commercial
environments
Optical interconnect solution with plasmonic modulator and Ge photodetector array
We report on an optical chip-to-chip interconnect solution, thereby demonstrating plasmonics as a solution for ultra-dense, high-speed short-reach communications. The interconnect comprises a densely integrated plasmonic Mach-Zehnder modulator array that is packaged with standard driving electronics. On the receiver side, a germanium photodetector array is integrated with trans-impedance amplifiers. A multicore fiber provides a compact optical interface to the array. We demonstrate 4 × 20 Gb/s on-off keying signaling with direct detection.ISSN:1041-1135ISSN:1941-017
Development and Implementation - DSIF Development
Antenna system instrumentation, phase modulator designs, control systems for transmitter and motor generator, and related DSIF development
Broadband energy-efficient optical modulation by hybrid integration of silicon nanophotonics and organic electro-optic polymer
Silicon-organic hybrid integrated devices have emerging applications ranging
from high-speed optical interconnects to photonic electromagnetic-field
sensors. Silicon slot photonic crystal waveguides (PCWs) filled with
electro-optic (EO) polymers combine the slow-light effect in PCWs with the high
polarizability of EO polymers, which promises the realization of
high-performance optical modulators. In this paper, a broadband,
power-efficient, low-dispersion, and compact optical modulator based on an EO
polymer filled silicon slot PCW is presented. A small voltage-length product of
V{\pi}*L=0.282Vmm is achieved, corresponding to an unprecedented record-high
effective in-device EO coefficient (r33) of 1230pm/V. Assisted by a backside
gate voltage, the modulation response up to 50GHz is observed, with a 3-dB
bandwidth of 15GHz, and the estimated energy consumption is 94.4fJ/bit at
10Gbit/s. Furthermore, lattice-shifted PCWs are utilized to enhance the optical
bandwidth by a factor of ~10X over other modulators based on
non-band-engineered PCWs and ring-resonators.Comment: 12 pages, 4 figures, SPIE Photonics West Conference 201
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