Evaluation of STT-MRAM main memory for HPC and real-time systems

It is questionable whether DRAM will continue to scale and will meet the needs of next-generation systems. Therefore, significant effort is invested in research and development of novel memory technologies. One of the candidates for nextgeneration memory is Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM is an emerging non-volatile memory with a lot of potential that could be exploited for various requirements of different computing systems. Being a novel technology, STT-MRAM devices are already approaching DRAM in terms of capacity, frequency and device size. Special STT-MRAM features such as intrinsic radiation hardness, non-volatility, zero stand-by power and capability to function in extreme temperatures also make it particularly suitable for aerospace, avionics and automotive applications. Despite of being a conceivable alternative for main memory technology, to this day, academic research of STT-MRAM main memory remains marginal. This is mainly due to the unavailability of publicly available detailed timing parameters of this novel technology, which are required to perform a cycle accurate main memory simulation. Some researchers adopt simplistic memory models to simulate main memory, but such models can introduce significant errors in the analysis of the overall system performance. Therefore, detailed timing parameters are a must-have for any evaluation or architecture exploration study of STT-MRAM main memory. These detailed parameters are not publicly available because STT-MRAM manufacturers are reluctant to release any delicate information on the technology. This thesis demonstrates an approach to perform a cycle accurate simulation of STT-MRAM main memory, being the first to release detailed timing parameters of this technology from academia, essentially enabling researchers to conduct reliable system level simulation of STT-MRAM using widely accepted existing simulation infrastructure. Our results show that, in HPC domain STT-MRAM provide performance comparable to DRAM. Results from the power estimation indicates that STT-MRAM power consumption increases significantly for Activation/Precharge power while Burst power increases moderately and Background power does not deviate much from DRAM. The thesis includes detailed STT-MRAM main memory timing parameters to the main repositories of DramSim2 and Ramulator, two of the most widely used and accepted state-of-the-art main memory simulators. The STT-MRAM timing parameters that has been originated as a part of this thesis, are till date the only reliable and publicly available timing information on this memory technology published from academia. Finally, the thesis analyzes the feasibility of using STT-MRAM in real-time embedded systems by investigating STT-MRAM main memory impact on average system performance and WCET. STT-MRAM's suitability for the real-time embedded systems is validated on benchmarks provided by the European Space Agency (ESA), EEMBC Autobench and MediaBench suite by analyzing performance and WCET impact. In quantitative terms, our results show that STT-MRAM main memory in real-time embedded systems provides performance and WCET comparable to conventional DRAM, while opening up opportunities to exploit various advantages.Es cuestionable si DRAM continuará escalando y cumplirá con las necesidades de los sistemas de la próxima generación. Por lo tanto, se invierte un esfuerzo significativo en la investigación y el desarrollo de nuevas tecnologías de memoria. Uno de los candidatos para la memoria de próxima generación es la Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM es una memoria no volátil emergente con un gran potencial que podría ser explotada para diversos requisitos de diferentes sistemas informáticos. Al ser una tecnología novedosa, los dispositivos STT-MRAM ya se están acercando a la DRAM en términos de capacidad, frecuencia y tamaño del dispositivo. Las características especiales de STTMRAM, como la dureza intrínseca a la radiación, la no volatilidad, la potencia de reserva cero y la capacidad de funcionar en temperaturas extremas, también lo hacen especialmente adecuado para aplicaciones aeroespaciales, de aviónica y automotriz. A pesar de ser una alternativa concebible para la tecnología de memoria principal, hasta la fecha, la investigación académica de la memoria principal de STT-MRAM sigue siendo marginal. Esto se debe principalmente a la falta de disponibilidad de los parámetros de tiempo detallados públicamente disponibles de esta nueva tecnología, que se requieren para realizar un ciclo de simulación de memoria principal precisa. Algunos investigadores adoptan modelos de memoria simplistas para simular la memoria principal, pero tales modelos pueden introducir errores significativos en el análisis del rendimiento general del sistema. Por lo tanto, los parámetros de tiempo detallados son indispensables para cualquier evaluación o estudio de exploración de la arquitectura de la memoria principal de STT-MRAM. Estos parámetros detallados no están disponibles públicamente porque los fabricantes de STT-MRAM son reacios a divulgar información delicada sobre la tecnología. Esta tesis demuestra un enfoque para realizar un ciclo de simulación precisa de la memoria principal de STT-MRAM, siendo el primero en lanzar parámetros de tiempo detallados de esta tecnología desde la academia, lo que esencialmente permite a los investigadores realizar una simulación confiable a nivel de sistema de STT-MRAM utilizando una simulación existente ampliamente aceptada infraestructura. Nuestros resultados muestran que, en el dominio HPC, STT-MRAM proporciona un rendimiento comparable al de la DRAM. Los resultados de la estimación de potencia indican que el consumo de potencia de STT-MRAM aumenta significativamente para la activation/Precharge power, mientras que la Burst power aumenta moderadamente y la Background power no se desvía mucho de la DRAM. La tesis incluye parámetros detallados de temporización memoria principal de STT-MRAM a los repositorios principales de DramSim2 y Ramulator, dos de los simuladores de memoria principal más avanzados y más utilizados y aceptados. Los parámetros de tiempo de STT-MRAM que se han originado como parte de esta tesis, son hasta la fecha la única información de tiempo confiable y disponible al público sobre esta tecnología de memoria publicada desde la academia. Finalmente, la tesis analiza la viabilidad de usar STT-MRAM en real-time embedded systems mediante la investigación del impacto de la memoria principal de STT-MRAM en el rendimiento promedio del sistema y WCET. La idoneidad de STTMRAM para los real-time embedded systems se valida en los applicaciones proporcionados por la European Space Agency (ESA), EEMBC Autobench y MediaBench, al analizar el rendimiento y el impacto de WCET. En términos cuantitativos, nuestros resultados muestran que la memoria principal de STT-MRAM en real-time embedded systems proporciona un desempeño WCET comparable al de una memoria DRAM convencional, al tiempo que abre oportunidades para explotar varias ventajas

CoMeT: An Integrated Interval Thermal Simulation Toolchain for 2D, 2.5 D, and 3D Processor-Memory Systems

Processing cores and the accompanying main memory working in tandem enable the modern processors. Dissipating heat produced from computation, memory access remains a significant problem for processors. Therefore, processor thermal management continues to be an active research topic. Most thermal management research takes place using simulations, given the challenges of measuring temperature in real processors. Since core and memory are fabricated on separate packages in most existing processors, with the memory having lower power densities, thermal management research in processors has primarily focused on the cores. Memory bandwidth limitations associated with 2D processors lead to high-density 2.5D and 3D packaging technology. 2.5D packaging places cores and memory on the same package. 3D packaging technology takes it further by stacking layers of memory on the top of cores themselves. Such packagings significantly increase the power density, making processors prone to heating. Therefore, mitigating thermal issues in high-density processors (packaged with stacked memory) becomes an even more pressing problem. However, given the lack of thermal modeling for memories in existing interval thermal simulation toolchains, they are unsuitable for studying thermal management for high-density processors. To address this issue, we present CoMeT, the first integrated Core and Memory interval Thermal simulation toolchain. CoMeT comprehensively supports thermal simulation of high- and low-density processors corresponding to four different core-memory configurations - off-chip DDR memory, off-chip 3D memory, 2.5D, and 3D. CoMeT supports several novel features that facilitate overlying system research. Compared to an equivalent state-of-the-art core-only toolchain, CoMeT adds only a ~5% simulation-time overhead. The source code of CoMeT has been made open for public use under the MIT license.Comment: https://github.com/marg-tools/CoMe

Evaluation of STT-MRAM main memory for HPC and real-time systems

It is questionable whether DRAM will continue to scale and will meet the needs of next-generation systems. Therefore, significant effort is invested in research and development of novel memory technologies. One of the candidates for nextgeneration memory is Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM is an emerging non-volatile memory with a lot of potential that could be exploited for various requirements of different computing systems. Being a novel technology, STT-MRAM devices are already approaching DRAM in terms of capacity, frequency and device size. Special STT-MRAM features such as intrinsic radiation hardness, non-volatility, zero stand-by power and capability to function in extreme temperatures also make it particularly suitable for aerospace, avionics and automotive applications. Despite of being a conceivable alternative for main memory technology, to this day, academic research of STT-MRAM main memory remains marginal. This is mainly due to the unavailability of publicly available detailed timing parameters of this novel technology, which are required to perform a cycle accurate main memory simulation. Some researchers adopt simplistic memory models to simulate main memory, but such models can introduce significant errors in the analysis of the overall system performance. Therefore, detailed timing parameters are a must-have for any evaluation or architecture exploration study of STT-MRAM main memory. These detailed parameters are not publicly available because STT-MRAM manufacturers are reluctant to release any delicate information on the technology. This thesis demonstrates an approach to perform a cycle accurate simulation of STT-MRAM main memory, being the first to release detailed timing parameters of this technology from academia, essentially enabling researchers to conduct reliable system level simulation of STT-MRAM using widely accepted existing simulation infrastructure. Our results show that, in HPC domain STT-MRAM provide performance comparable to DRAM. Results from the power estimation indicates that STT-MRAM power consumption increases significantly for Activation/Precharge power while Burst power increases moderately and Background power does not deviate much from DRAM. The thesis includes detailed STT-MRAM main memory timing parameters to the main repositories of DramSim2 and Ramulator, two of the most widely used and accepted state-of-the-art main memory simulators. The STT-MRAM timing parameters that has been originated as a part of this thesis, are till date the only reliable and publicly available timing information on this memory technology published from academia. Finally, the thesis analyzes the feasibility of using STT-MRAM in real-time embedded systems by investigating STT-MRAM main memory impact on average system performance and WCET. STT-MRAM's suitability for the real-time embedded systems is validated on benchmarks provided by the European Space Agency (ESA), EEMBC Autobench and MediaBench suite by analyzing performance and WCET impact. In quantitative terms, our results show that STT-MRAM main memory in real-time embedded systems provides performance and WCET comparable to conventional DRAM, while opening up opportunities to exploit various advantages.Es cuestionable si DRAM continuará escalando y cumplirá con las necesidades de los sistemas de la próxima generación. Por lo tanto, se invierte un esfuerzo significativo en la investigación y el desarrollo de nuevas tecnologías de memoria. Uno de los candidatos para la memoria de próxima generación es la Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). STT-MRAM es una memoria no volátil emergente con un gran potencial que podría ser explotada para diversos requisitos de diferentes sistemas informáticos. Al ser una tecnología novedosa, los dispositivos STT-MRAM ya se están acercando a la DRAM en términos de capacidad, frecuencia y tamaño del dispositivo. Las características especiales de STTMRAM, como la dureza intrínseca a la radiación, la no volatilidad, la potencia de reserva cero y la capacidad de funcionar en temperaturas extremas, también lo hacen especialmente adecuado para aplicaciones aeroespaciales, de aviónica y automotriz. A pesar de ser una alternativa concebible para la tecnología de memoria principal, hasta la fecha, la investigación académica de la memoria principal de STT-MRAM sigue siendo marginal. Esto se debe principalmente a la falta de disponibilidad de los parámetros de tiempo detallados públicamente disponibles de esta nueva tecnología, que se requieren para realizar un ciclo de simulación de memoria principal precisa. Algunos investigadores adoptan modelos de memoria simplistas para simular la memoria principal, pero tales modelos pueden introducir errores significativos en el análisis del rendimiento general del sistema. Por lo tanto, los parámetros de tiempo detallados son indispensables para cualquier evaluación o estudio de exploración de la arquitectura de la memoria principal de STT-MRAM. Estos parámetros detallados no están disponibles públicamente porque los fabricantes de STT-MRAM son reacios a divulgar información delicada sobre la tecnología. Esta tesis demuestra un enfoque para realizar un ciclo de simulación precisa de la memoria principal de STT-MRAM, siendo el primero en lanzar parámetros de tiempo detallados de esta tecnología desde la academia, lo que esencialmente permite a los investigadores realizar una simulación confiable a nivel de sistema de STT-MRAM utilizando una simulación existente ampliamente aceptada infraestructura. Nuestros resultados muestran que, en el dominio HPC, STT-MRAM proporciona un rendimiento comparable al de la DRAM. Los resultados de la estimación de potencia indican que el consumo de potencia de STT-MRAM aumenta significativamente para la activation/Precharge power, mientras que la Burst power aumenta moderadamente y la Background power no se desvía mucho de la DRAM. La tesis incluye parámetros detallados de temporización memoria principal de STT-MRAM a los repositorios principales de DramSim2 y Ramulator, dos de los simuladores de memoria principal más avanzados y más utilizados y aceptados. Los parámetros de tiempo de STT-MRAM que se han originado como parte de esta tesis, son hasta la fecha la única información de tiempo confiable y disponible al público sobre esta tecnología de memoria publicada desde la academia. Finalmente, la tesis analiza la viabilidad de usar STT-MRAM en real-time embedded systems mediante la investigación del impacto de la memoria principal de STT-MRAM en el rendimiento promedio del sistema y WCET. La idoneidad de STTMRAM para los real-time embedded systems se valida en los applicaciones proporcionados por la European Space Agency (ESA), EEMBC Autobench y MediaBench, al analizar el rendimiento y el impacto de WCET. En términos cuantitativos, nuestros resultados muestran que la memoria principal de STT-MRAM en real-time embedded systems proporciona un desempeño WCET comparable al de una memoria DRAM convencional, al tiempo que abre oportunidades para explotar varias ventajas.Postprint (published version

CoMeT: An Integrated Interval Thermal Simulation Toolchain for 2D, 2.5D, and 3D Processor-Memory Systems

Processing cores and the accompanying main memory working in tandem enable modern processors. Dissipating heat produced from computation remains a significant problem for processors. Therefore, the thermal management of processors continues to be an active subject of research. Most thermal management research is performed using simulations, given the challenges in measuring temperatures in real processors. Fast yet accurate interval thermal simulation toolchains remain the research tool of choice to study thermal management in processors at the system level. However, the existing toolchains focus on the thermal management of cores in the processors, since they exhibit much higher power densities than memory. The memory bandwidth limitations associated with 2D processors lead to high-density 2.5D and 3D packaging technology: 2.5D packaging technology places cores and memory on the same package; 3D packaging technology takes it further by stacking layers of memory on the top of cores themselves. These new packagings significantly increase the power density of the processors, making them prone to overheating. Therefore, mitigating thermal issues in high-density processors (packaged with stacked memory) becomes even more pressing. However, given the lack of thermal modeling for memories in existing interval thermal simulation toolchains, they are unsuitable for studying thermal management for high-density processors. To address this issue, we present the first integrated Core and Memory interval Thermal (CoMeT) simulation toolchain. CoMeT comprehensively supports thermal simulation of high- and low-density processors corresponding to four different core-memory (integration) configurations-off-chip DDR memory, off-chip 3D memory, 2.5D, and 3D. CoMeT supports several novel features that facilitate overlying system research. CoMeT adds only an additional similar to 5% simulation-time overhead compared to an equivalent state-of-the-art core-only toolchain. The source code of CoMeT has been made open for public use under the MIT license

Cross-Layer Pathfinding for Off-Chip Interconnects

Off-chip interconnects for integrated circuits (ICs) today induce a diverse design space, spanning many different applications that require transmission of data at various bandwidths, latencies and link lengths. Off-chip interconnect design solutions are also variously sensitive to system performance, power and cost metrics, while also having a strong impact on these metrics. The costs associated with off-chip interconnects include die area, package (PKG) and printed circuit board (PCB) area, technology and bill of materials (BOM). Choices made regarding off-chip interconnects are fundamental to product definition, architecture, design implementation and technology enablement. Given their cross-layer impact, it is imperative that a cross-layer approach be employed to architect and analyze off-chip interconnects up front, so that a top-down design flow can comprehend the cross-layer impacts and correctly assess the system performance, power and cost tradeoffs for off-chip interconnects. Chip architects are not exposed to all the tradeoffs at the physical and circuit implementation or technology layers, and often lack the tools to accurately assess off-chip interconnects. Furthermore, the collaterals needed for a detailed analysis are often lacking when the chip is architected; these include circuit design and layout, PKG and PCB layout, and physical floorplan and implementation. To address the need for a framework that enables architects to assess the system-level impact of off-chip interconnects, this thesis presents power-area-timing (PAT) models for off-chip interconnects, optimization and planning tools with the appropriate abstraction using these PAT models, and die/PKG/PCB co-design methods that help expose the off-chip interconnect cross-layer metrics to the die/PKG/PCB design flows. Together, these models, tools and methods enable cross-layer optimization that allows for a top-down definition and exploration of the design space and helps converge on the correct off-chip interconnect implementation and technology choice. The tools presented cover off-chip memory interfaces for mobile and server products, silicon photonic interfaces, 2.5D silicon interposers and 3D through-silicon vias (TSVs). The goal of the cross-layer framework is to assess the key metrics of the interconnect (such as timing, latency, active/idle/sleep power, and area/cost) at an appropriate level of abstraction by being able to do this across layers of the design flow. In additional to signal interconnect, this thesis also explores the need for such cross-layer pathfinding for power distribution networks (PDN), where the system-on-chip (SoC) floorplan and pinmap must be optimized before the collateral layouts for PDN analysis are ready. Altogether, the developed cross-layer pathfinding methodology for off-chip interconnects enables more rapid and thorough exploration of a vast design space of off-chip parallel and serial links, inter-die and inter-chiplet links and silicon photonics. Such exploration will pave the way for off-chip interconnect technology enablement that is optimized for system needs. The basis of the framework can be extended to cover other interconnect technology as well, since it fundamentally relates to system-level metrics that are common to all off-chip interconnects

Doctor of Philosophy

dissertationThe computing landscape is undergoing a major change, primarily enabled by ubiquitous wireless networks and the rapid increase in the use of mobile devices which access a web-based information infrastructure. It is expected that most intensive computing may either happen in servers housed in large datacenters (warehouse- scale computers), e.g., cloud computing and other web services, or in many-core high-performance computing (HPC) platforms in scientific labs. It is clear that the primary challenge to scaling such computing systems into the exascale realm is the efficient supply of large amounts of data to hundreds or thousands of compute cores, i.e., building an efficient memory system. Main memory systems are at an inflection point, due to the convergence of several major application and technology trends. Examples include the increasing importance of energy consumption, reduced access stream locality, increasing failure rates, limited pin counts, increasing heterogeneity and complexity, and the diminished importance of cost-per-bit. In light of these trends, the memory system requires a major overhaul. The key to architecting the next generation of memory systems is a combination of the prudent incorporation of novel technologies, and a fundamental rethinking of certain conventional design decisions. In this dissertation, we study every major element of the memory system - the memory chip, the processor-memory channel, the memory access mechanism, and memory reliability, and identify the key bottlenecks to efficiency. Based on this, we propose a novel main memory system with the following innovative features: (i) overfetch-aware re-organized chips, (ii) low-cost silicon photonic memory channels, (iii) largely autonomous memory modules with a packet-based interface to the proces- sor, and (iv) a RAID-based reliability mechanism. Such a system is energy-efficient, high-performance, low-complexity, reliable, and cost-effective, making it ideally suited to meet the requirements of future large-scale computing systems

Doctor of Philosophy in Computing

dissertatio

Doctor of Philosophy in Computing

dissertationThe demand for main memory capacity has been increasing for many years and will continue to do so. In the past, Dynamic Random Access Memory (DRAM) process scaling has enabled this increase in memory capacity. Along with continued DRAM scaling, the emergence of new technologies like 3D-stacking, buffered Dual Inline Memory Modules (DIMMs), and crosspoint nonvolatile memory promise to continue this trend in the years ahead. However, these technologies will bring with them their own gamut of problems. In this dissertation, I look at the problems facing these technologies from a current delivery perspective. 3D-stacking increases memory capacity available per package, but the increased current requirement means that more pins on the package have to be now dedicated to provide Vdd/Vss, hence increasing cost. At the system level, using buffered DIMMs to increase the number of DRAM ranks increases the peak current requirements of the system if all the DRAM chips in the system are Refreshed simultaneously. Crosspoint memories promise to greatly increase bit densities but have long read latencies because of sneak currents in the cross-bar. In this dissertation, I provide architectural solutions to each of these problems. We observe that smart data placement by the architecture and the Operating System (OS) is a vital ingredient in all of these solutions. We thereby mitigate major bottlenecks in these technologies, hence enabling higher memory densities

Multi-Level Main Memory Systems: Technology Choices, Design Considerations, and Trade-off Analysis

Multi-level main memory systems provide a way to leverage the advantages of different memory technologies to build a main memory that overcomes the limitations of the current flat DRAM-based architecture. The slowdown of DRAM scaling has resulted in the development of new memory technologies that potentially enable the continued improvement of the main memory system in terms of performance, capacity, and energy efficiency. However, all of these novel technologies have weaknesses that necessitate the utilization of a multi-level main memory hierarchy in order to build a main memory system with acceptable characteristics. This dissertation investigates the implications of these new multi-level main memory architectures and provides key insights into the trade-offs associated with the technology and organization choices that are integral to their design. The design space of multi-level main memory systems is much larger than the traditional main memory system's because it also includes additional cache design and technology choices. This dissertation divides the analysis of that space into three more manageable components. First, we begin by exploring the ways in which high level design choices affect this new type of system differently than current state of the art systems. Second, we focus on the details of the DRAM cache and propose a novel design that efficiently enables associativity. Finally, we turn our attention to the backing store and evaluate the performance effects of different organizations and optimizations for that system. From these studies we are able to identify the critical aspects of the system that contribute significantly to its overall performance. In particular, we note that in most potential systems the ratio of hit latency to miss latency is the dominant factor that determines performance. This motivated the development of our novel associative DRAM cache design in order to minimize the miss rate and reduce the impact of the miss latency while maintaining an acceptable hit latency. In addition, we also observe that selecting the page size, organization, and prefetching degree that best suits each particular backing store technology can help to reduce the miss penalty thereby improving the performance of the overall system