集積化AlGaN/GaNイオン感応性電界効果トランジスタに関する研究

AlGaN/GaN heterostructure ion-sensitive field-effect transistors (ISFETs) can provide high sensitivity and fast response due to the high electron mobility and high electron density providing by the two-dimensional electron gas (2DEG) generated at the AlGaN/GaN heterostructure interface. My research mainly focuses on the investigation of the integrated AlGaN/GaN ISFETs for pH sensing. To achieve high performance on AlGaN/GaN ISFET pH sensor, we fabricated sensors with different Al composition (25%, and 35%). We compared the characteristics of the sensors with 25% and 35% Al composition. The pH sensor with Al composition (35%) in the barrier layer with a 16 nm transition layer of 25% Al composition shows better surface sensitivity (SV) of 56.01 mV/pH, which is higher than that of the sensor with 25% Al composition (53.94 mV /pH), but worse current sensitivity SA (-0.095 mA/pH Vs -0.102 mA/pH). In addition, threshold voltage increases from approximately -1.6 V to approximately -0.8 V when measured in alkaline solution for 5 times, along with a decreasing output current. High-resolution SEM photos show that there are high density hexagonal pits with the size of approximately 100 nm on the device surface, presenting the etching effect along the dislocations during alkaline sensing. The X-ray photoelectron spectroscopy (XPS) demonstrates that the intensity of the Ga3d and Al2p spectra decreases after pH sensing measurement, implying the variation of chemical component occurs in the upper AlGaN thin layer. Many voids with a size of approximately 100 nm were observed from the transmission electron microscope (TEM) pictures, which are comparable with that of the scanning electron microscope (SEM). Combining with the energy dispersive X-ray spectroscopy (EDX), the degradation in electrical performance can be attributed to the transformation of AlGaN into oxide as well as the followed alkaline solution dissolve. To avoid the reaction of surface Al with solution, a 3 nm GaN cap layer was added. To reduce the barrier layer thickness, a recessed gate with a length of 2 μm and a depth of about 14 nm was formed. The current sensitivity of the AlGaN/GaN ISFET pH sensors has been improved by 61%, from 52.25 to 84.39 μA/pH, by the recessed-gate structure and ammoniate water treatment. A pH meter system based on the GaN pH sensor was constructed and evaluated. GaN-based ISFET can measure the pH value of the solutions with similar circuit, whether in the linear region or the saturation region. The measurement is stable and repeatable. The small current in the linear region can make the measurement stable and fast, but the resolution is a bit low. High resolution can be obtained in the saturation region, but the measurement is unstable due to excessive current. The Schottky barrier diode (SBD) based on GaN can be used for temperature sensing, and the temperature sensitivity can be improved by different structure design. A recessed anode AlGaN/GaN SBD is suitable to integrate with GaN-based power device for temperature sensor application. The temperature dependent forward voltage at a fixed current shows good linearity, resulting in a sensitivity of approximately 1.0 mV/K. The p-NiO guard ring can suppress the electric field at the anode/GaN interface and field crowding at the anode edge effectively, which enhances the breakdown voltage to approximately -250 V. Using the same material, we can design an integrated device sensor based on GaN to measure temperature and pH simultaneously, which will solve the measurement deviation of pH sensor at different temperatures

NASA SBIR abstracts of 1991 phase 1 projects

The objectives of 301 projects placed under contract by the Small Business Innovation Research (SBIR) program of the National Aeronautics and Space Administration (NASA) are described. These projects were selected competitively from among proposals submitted to NASA in response to the 1991 SBIR Program Solicitation. The basic document consists of edited, non-proprietary abstracts of the winning proposals submitted by small businesses. The abstracts are presented under the 15 technical topics within which Phase 1 proposals were solicited. Each project was assigned a sequential identifying number from 001 to 301, in order of its appearance in the body of the report. Appendixes to provide additional information about the SBIR program and permit cross-reference of the 1991 Phase 1 projects by company name, location by state, principal investigator, NASA Field Center responsible for management of each project, and NASA contract number are included

Global tropospheric chemistry: Chemical fluexes in the global atmosphere

In October 1987, NSF, NASA, and NOAA jointly sponsored a workshop at Columbia University to assess the experimental tools and analysis procedures in use and under development to measure and understand gas and particle fluxes across this critical air-surface boundary. Results are presented for that workshop. It is published to summarize the present understanding of the various measurement techniques that are available, identify promising new technological developments for improved measurements, and stimulate thinking about this important measurement challenge

The NASA SBIR product catalog

The purpose of this catalog is to assist small business firms in making the community aware of products emerging from their efforts in the Small Business Innovation Research (SBIR) program. It contains descriptions of some products that have advanced into Phase 3 and others that are identified as prospective products. Both lists of products in this catalog are based on information supplied by NASA SBIR contractors in responding to an invitation to be represented in this document. Generally, all products suggested by the small firms were included in order to meet the goals of information exchange for SBIR results. Of the 444 SBIR contractors NASA queried, 137 provided information on 219 products. The catalog presents the product information in the technology areas listed in the table of contents. Within each area, the products are listed in alphabetical order by product name and are given identifying numbers. Also included is an alphabetical listing of the companies that have products described. This listing cross-references the product list and provides information on the business activity of each firm. In addition, there are three indexes: one a list of firms by states, one that lists the products according to NASA Centers that managed the SBIR projects, and one that lists the products by the relevant Technical Topics utilized in NASA's annual program solicitation under which each SBIR project was selected

The Study Of Gan Materials For Device Applications

Dalam projek ini, tumpuan kerja adalah pada kajian kualiti bahan GaN yang ditumbuh oleh teknik-teknik yang berlainan, sentuhan logam pada bahan-bahan GaN dan juga kajian pada sifat-sifat asas bahan GaN berliang, serta fabrikasi peranti berasaskan bahan GaN berliang. In this project, works are focusing on the investigation of the material quality grown by different techniques, metal contacts on GaN materials as well as the study of the fundamental properties of the porous GaN materials and the fabrication of devices based on porous GaN materials

The Study Of Gan Materials For Device Applications [QD181.N1 Y19 2007 f rb].

Dalam projek ini, tumpuan kerja adalah pada kajian kualiti bahan GaN yang ditumbuh oleh teknik-teknik yang berlainan, sentuhan logam pada bahan-bahan GaN dan juga kajian pada sifat-sifat asas bahan GaN berliang, serta fabrikasi peranti berasaskan bahan GaN berliang. In this project, works are focusing on the investigation of the material quality grown by different techniques, metal contacts on GaN materials as well as the study of the fundamental properties of the porous GaN materials and the fabrication of devices based on porous GaN materials

Beyond solid-state lighting: Miniaturization, hybrid integration, and applications og GaN nano- and micro-LEDs

Gallium Nitride (GaN) light-emitting-diode (LED) technology has been the revolution in modern lighting. In the last decade, a huge global market of efficient, long-lasting and ubiquitous white light sources has developed around the inception of the Nobel-price-winning blue GaN LEDs. Today GaN optoelectronics is developing beyond lighting, leading to new and innovative devices, e.g. for micro-displays, being the core technology for future augmented reality and visualization, as well as point light sources for optical excitation in communications, imaging, and sensing. This explosion of applications is driven by two main directions: the ability to produce very small GaN LEDs (microLEDs and nanoLEDs) with high efficiency and across large areas, in combination with the possibility to merge optoelectronic-grade GaN microLEDs with silicon microelectronics in a fully hybrid approach. GaN LED technology today is even spreading into the realm of display technology, which has been occupied by organic LED (OLED) and liquid crystal display (LCD) for decades. In this review, the technological transition towards GaN micro- and nanodevices beyond lighting is discussed including an up-to-date overview on the state of the art

Distributed environmental monitoring

With increasingly ubiquitous use of web-based technologies in society today, autonomous sensor networks represent the future in large-scale information acquisition for applications ranging from environmental monitoring to in vivo sensing. This chapter presents a range of on-going projects with an emphasis on environmental sensing; relevant literature pertaining to sensor networks is reviewed, validated sensing applications are described and the contribution of high-resolution temporal data to better decision-making is discussed