Remote Power Analysis of {RFID} Tags

We describe the first power analysis attack on passive RFID tags. Compared to standard power analysis attacks, this attack is unique in that it requires no physical contact with the device under attack. The power analysis can be carried out even if both the tag and the attacker are passive and transmit no data, making the attack very hard to detect. As a proof of concept, we use power analysis to extract the kill passwords from Class 1 EPC tags operating in the UHF frequency range. Tags from several major vendors were successfully attacked. Our attack can be extended to HF tags and to remote fault analysis. The main significance of our attack is not in the discovery of kill passwords but in its implications on future tag design -- any cryptographic functionality built into tags needs to be designed to be resistant to power analysis, and achieving this resistance is an undertaking which has an effect both on the price and on the performance of tags. (this is my Master\u27s thesis, carried out under the supervision of Prof. Adi Shamir. It may be considered as the extended version of the article Remote Password Extraction from RFID Tags , recently published in IEEE Transactions on Computers and indexed as http://dx.doi.org/10.1109/TC.2007.1050 or as http://ieeexplore.ieee.org/iel5/12/4288079/04288095.pdf

Solid State Gas Dissociating Device, Solid State Sensor, and Solid State Transformer

Patents filed by licensee. Patents connected to this disclosure were not entered into the ARGIS database therefore linking them all to this on disclosure

Wireless communication over NFC with a constrained resouce device

Tese de mestrado integrado. Engenharia Electrotécnica e de Computadores. Faculdade de Engenharia. Universidade do Porto. 201

Method of Fabricating Solid State Gas Dissociating Device By Laser Doping

Patents filed by licensee. Patents connected to this disclosure were not entered into the ARGIS database therefore linking them all to this on disclosure

Development and fabrication of S-band chip varactor parametric amplifier

A noncryogenic, S-band parametric amplifier operating in the 2.2 to 2.3 GHz band and having an average input noise temperature of less than 30 K was built and tested. The parametric amplifier module occupies a volume of less than 1-1/4 cubic feet and weighs less than 60 pounds. The module is designed for use in various NASA ground stations to replace larger, more complex cryogenic units which require considerably more maintenance because of the cryogenic refrigeration system employed. The amplifier can be located up to 15 feet from the power supply unit. Optimum performance was achieved through the use of high-quality unpackaged (chip) varactors in the amplifier design

Solid State Energy Conversion Device

A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation