Design methods for 60GHz beamformers in CMOS

The 60GHz band is promising for applications such as high-speed short-range wireless personal-area network (WPAN), real-time video streaming at rates of several-Gbps, automotive radar, and mm-Wave imaging, since it provides a large amount of bandwidth that can freely (i.e. without a license) be used worldwide. However, transceivers at 60GHz pose several additional challenges over microwave transceivers. In addition to the circuit design challenges of implementing high performance 60GHz RF circuits in mainstream CMOS technology, the path loss at 60GHz is significantly higher than at microwave frequencies because of the smaller size of isotropic antennas. This can be overcome by using phased array technology. This thesis studies the new concepts and design techniques that can be used for 60GHz phased array systems. It starts with an overview of various applications at mm-wave frequencies, such as multi-Gbps radio at 60GHz, automotive radar and millimeter-wave imaging. System considerations of mm-wave receivers and transmitters are discussed, followed by the selection of a CMOS technology to implement millimeter-wave (60GHz) systems. The link budget of a 60GHz WPAN is analyzed, which leads to the introduction of phased array techniques to improve system performance. Different phased array architectures are studied and compared. The system requirements of phase shifters are discussed. Several types of conventional RF phase shifters are reviewed. A 60GHz 4-bit passive phase shifter is designed and implemented in a 65nm CMOS technology. Measurement results are presented and compared to published prior art. A 60GHz 4-bit active phase shifter is designed and integrated with low noise amplifier and combiner for a phased array receiver. This is implemented in a 65nm CMOS technology, and the measurement results are presented. The design of a 60GHz 4-bit active phase shifter and its integration with power amplifier is also presented for a phased array transmitter. This is implemented in a 65nm CMOS technology. The measurement results are also presented and compared to reported prior art. The integration of a 60GHz CMOS amplifier and an antenna in a printed circuit-board (PCB) package is investigated. Experimental results are presented and discussed

High Performance Local Oscillator Design for Next Generation Wireless Communication

Local Oscillator (LO) is an essential building block in modern wireless radios. In modern wireless radios, LO often serves as a reference of the carrier signal to modulate or demod- ulate the outgoing or incoming data. The LO signal should be a clean and stable source, such that the frequency or timing information of the carrier reference can be well-defined. However, as radio architecture evolves, the importance of LO path design has become much more important than before. Of late, many radio architecture innovations have exploited sophisticated LO generation schemes to meet the ever-increasing demands of wireless radio performances. The focus of this thesis is to address challenges in the LO path design for next-generation high performance wireless radios. These challenges include (1) Congested spectrum at low radio frequency (RF) below 5GHz (2) Continuing miniaturization of integrated wireless radio, and (3) Fiber-fast (>10Gb/s) mm-wave wireless communication. The thesis begins with a brief introduction of the aforementioned challenges followed by a discussion of the opportunities projected to overcome these challenges. To address the challenge of congested spectrum at frequency below 5GHz, novel ra- dio architectures such as cognitive radio, software-defined radio, and full-duplex radio have drawn significant research interest. Cognitive radio is a radio architecture that opportunisti- cally utilize the unused spectrum in an environment to maximize spectrum usage efficiency. Energy-efficient spectrum sensing is the key to implementing cognitive radio. To enable energy-efficient spectrum sensing, a fast-hopping frequency synthesizer is an essential build- ing block to swiftly sweep the carrier frequency of the radio across the available spectrum. Chapter 2 of this thesis further highlights the challenges and trade-offs of the current LO gen- eration scheme for possible use in sweeping LO-based spectrum analysis. It follows by intro- duction of the proposed fast-hopping LO architecture, its implementation and measurement results of the validated prototype. Chapter 3 proposes an embedded phase-shifting LO-path design for wideband RF self-interference cancellation for full-duplex radio. It demonstrates a synergistic design between the LO path and signal to perform self-interference cancellation. To address the challenge of continuing miniaturization of integrated wireless radio, ring oscillator-based frequency synthesizer is an attractive candidate due to its compactness. Chapter 4 discussed the difficulty associated with implementing a Phase-Locked Loop (PLL) with ultra-small form-factor. It further proposes the concept sub-sampling PLL with time- based loop filter to address these challenges. A 65nm CMOS prototype and its measurement result are presented for validation of the concept. In shifting from RF to mm-wave frequencies, the performance of wireless communication links is boosted by significant bandwidth and data-rate expansion. However, the demand for data-rate improvement is out-pacing the innovation of radio architectures. A >10Gb/s mm-wave wireless communication at 60GHz is required by emerging applications such as virtual-reality (VR) headsets, inter-rack data transmission at data center, and Ultra-High- Definition (UHD) TV home entertainment systems. Channel-bonding is considered to be a promising technique for achieving >10Gb/s wireless communication at 60GHz. Chapter 5 discusses the fundamental radio implementation challenges associated with channel-bonding for 60GHz wireless communication and the pros and cons of prior arts that attempted to address these challenges. It is followed by a discussion of the proposed 60GHz channel- bonding receiver, which utilizes only a single PLL and enables both contiguous and non- contiguous channel-bonding schemes. Finally, Chapter 6 presents the conclusion of this thesis

Ultra-wideband CMOS signal generator using tunable linear superposition

Department of Electrical EngineeringWireless communication frequency bandwidth and center frequency are have been widening for high speed transmission of data. But the frequency bandwidth a transceiver can cover is severely limited. The circuit designed in the paper, called "signal generator", can offer a variety of wireless bandwidths. In this paper, a ultra wideband signal generator, based in 65nm CMOS technology, is designed after proposing and verifying two different types of signal generator design. The first version design of the signal generator is proposed, which is composed of a four-stage LC-ring voltagecontrolled oscillator (VCO) and a frequency synthesis circuit. A new concept of tunable linear superposition is proposed for wideband frequency synthesis and implemented to provide VCO core (1X)/ twofold (2X)/ quadruple (4X) programmable frequency multiplication function. In order to expand frequency coverage further, the LCring VCO adopted the tunable inductors which are composed of switchable bondwire pairs. A ultra-wideband operation from 4.3GHz to 27.4GHz was experimentally verified. The second version design of the signal generator using a reconfigurable phase selection process is proposed, which is proposed and consists of a multi-phase signal generation and a programmable frequency multiplication. This chip is proposed for wideband frequency synthesis and implemented to provide VCO core (1X)/ twofold (2X)/ quadruple (4X) and octuplet (8X) programmable frequency multiplication function. An LC-ring oscillator and a selective rectifying combiner are reconstructed adaptively for various frequency synthesis modes, minimizing their power consumption. A fully-integrated prototype verified to have very wide frequency characteristic from 6.3GHz to 59.4GHz.ope

Energy-Efficient Wireless Circuits and Systems for Internet of Things

As the demand of ultra-low power (ULP) systems for internet of thing (IoT) applications has been increasing, large efforts on evolving a new computing class is actively ongoing. The evolution of the new computing class, however, faced challenges due to hard constraints on the RF systems. Significant efforts on reducing power of power-hungry wireless radios have been done. The ULP radios, however, are mostly not standard compliant which poses a challenge to wide spread adoption. Being compliant with the WiFi network protocol can maximize an ULP radio’s potential of utilization, however, this standard demands excessive power consumption of over 10mW, that is hardly compatible with in ULP systems even with heavy duty-cycling. Also, lots of efforts to minimize off-chip components in ULP IoT device have been done, however, still not enough for practical usage without a clean external reference, therefore, this limits scaling on cost and form-factor of the new computer class of IoT applications. This research is motivated by those challenges on the RF systems, and each work focuses on radio designs for IoT applications in various aspects. First, the research covers several endeavors for relieving energy constraints on RF systems by utilizing existing network protocols that eventually meets both low-active power, and widespread adoption. This includes novel approaches on 802.11 communication with articulate iterations on low-power RF systems. The research presents three prototypes as power-efficient WiFi wake-up receivers, which bridges the gap between industry standard radios and ULP IoT radios. The proposed WiFi wake-up receivers operate with low power consumption and remain compatible with the WiFi protocol by using back-channel communication. Back-channel communication embeds a signal into a WiFi compliant transmission changing the firmware in the access point, or more specifically just the data in the payload of the WiFi packet. With a specific sequence of data in the packet, the transmitter can output a signal that mimics a modulation that is more conducive for ULP receivers, such as OOK and FSK. In this work, low power mixer-first receivers, and the first fully integrated ultra-low voltage receiver are presented, that are compatible with WiFi through back-channel communication. Another main contribution of this work is in relieving the integration challenge of IoT devices by removing the need for external, or off-chip crystals and antennas. This enables a small form-factor on the order of mm3-scale, useful for medical research and ubiquitous sensing applications. A crystal-less small form factor fully integrated 60GHz transceiver with on-chip 12-channel frequency reference, and good peak gain dual-mode on-chip antenna is presented.PHDElectrical and Computer EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/162975/1/jaeim_1.pd

Efficient, High power Precision RF and mmWave Digital Transmitter Architectures

Digital transmitters offer several advantages over conventional analog transmitters such as reconfigurability, elimination of scaling-unfriendly, power hungry and bulky analog blocks and portability across technology. The rapid advancement of technology in CMOS processes also enables integration of complex digital signal processing circuitry on the same die as the digital transmitter to compensate for their non-idealities. The use of this digital assistance can, for instance, enable the use of highly efficient but nonlinear switching-class power amplifiers by compensating for their severe nonlinearity through digital predistortion. While this shift to digitally intensive transmitter architectures is propelled by the benefits stated above, several pressing challenges arise that vary in their nature depending on the frequency of operation - from RF to mmWave. Millimeter wave CMOS power amplifiers have traditionally been limited in output power due to the low breakdown voltage of scaled CMOS technologies and poor quality of on-chip passives. Moreover, high data-rates and efficient spectrum utilization demand highly linear power amplifiers with high efficiency under back-off. However, linearity and high efficiency are traditionally at odds with each other in conventional power amplifier design. In this dissertation, digital assistance is used to relax this trade-off and enable the use of state-of-the-art switching class power amplifiers. A novel digital transmitter architecture which simultaneously employs aggressive device-stacking and large-scale power combining for watt-class output power, dynamic load modulation for linearization, and improved efficiency under back-off by supply-switching and load modulation is presented. At RF frequencies, while the problem of watt-class power amplification has been long solved, more pressing challenges arise from the crowded spectrum in this regime. A major drawback of digital transmitters is the absence of a reconstruction filter after digital-to-analog conversion which causes the baseband quantization noise to get upconverted to RF and amplified at the output of the transmitter. In high power transmitters, this upconverted noise can be so strong as to prevent their use in FDD systems due to receiver desensitization or impose stringent coexistence challenges. In this dissertation, new quantization noise suppression techniques are presented which, for the first time, contribute toward making watt-class fully-integrated digital RF transmitters a viable alternative for FDD and coexistence scenarios. Specifically, the techniques involve embedding a mixed-domain multi-tap FIR filter within highly-efficient watt-class switching power amplifiers to suppress quantization noise, enhancing the bandwidth of noise suppression, enabling tunable location of suppression and overcoming the limitations of purely digital-domain filtering techniques for quantization noise

Design, Fault Modeling and Testing Of a Fully Integrated Low Noise Amplifier (LNA) in 45 nm CMOS Technology for Inter and Intra-Chip Wireless Interconnects

Research in recent years has demonstrated that intra and inter-chip wireless interconnects are capable of establishing energy-efficient data communications within as well as between multiple chips. This thesis introduces a circuit level design of a source degenerated two stage common source low noise amplifier suitable for such wireless interconnects in 45-nm CMOS process. The design consists of a simple two-stage common source structure based Low Noise Amplifier (LNA) to boost the degraded received signal. Operating at 60GHz, the proposed low noise amplifier consumes only 4.88 mW active power from a 1V supply while providing 17.2 dB of maximum gain at 60 GHz operating frequency at very low noise figure of 2.8 dB, which translates to a figure of merit of 16.1 GHz and IIP3 as -14.38 dBm

Design and characterization of monolithic millimeter-wave active and passive components, low-noise and power amplifiers, resistive mixers, and radio front-ends

This thesis focuses on the design and characterization of monolithic active and passive components, low-noise and power amplifiers, resistive mixers, and radio front-ends for millimeter-wave applications. The thesis consists of 11 publications and an overview of the research area, which also summarizes the main results of the work. In the design of millimeter-wave active and passive components the main focus is on realized CMOS components and techniques for pushing nanoscale CMOS circuits beyond 100 GHz. Test structures for measuring and analyzing these components are shown. Topologies for a coplanar waveguide, microstrip line, and slow-wave coplanar waveguide that are suitable for implementing transmission lines in nanoscale CMOS are presented. It is demonstrated that the proposed slow-wave coplanar waveguide improves the performance of the transistor-matching networks when compared to a conventional coplanar waveguide and the floating slow-wave shield reduces losses and simplifies modeling when extended below other passives, such as DC decoupling and RF short-circuiting capacitors. Furthermore, wideband spiral transmission line baluns in CMOS at millimeter-wave frequencies are demonstrated. The design of amplifiers and a wideband resistive mixer utilizing the developed components in 65-nm CMOS are shown. A 40-GHz amplifier achieved a +6-dBm 1-dB output compression point and a saturated output power of 9.6 dBm with a miniature chip size of 0.286 mm². The measured noise figure and gain of the 60-GHz amplifier were 5.6 dB and 11.5 dB, respectively. The V-band balanced resistive mixer achieved a 13.5-dB upconversion loss and 34-dB LO-to-RF isolation with a chip area of 0.47 mm². In downconversion, the measured conversion loss and 1-dB input compression point were 12.5 dB and +5 dBm, respectively. The design and experimental results of low-noise and power amplifiers are presented. Two wideband low-noise amplifiers were implemented in a 100-nm metamorphic high electron mobility transistor (HEMT) technology. The amplifiers achieved a 22.5-dB gain and a 3.3-dB noise figure at 94 GHz and a 18-19-dB gain and a 5.5-7.0-dB noise figure from 130 to 154 GHz. A 60-GHz power amplifier implemented in a 150-nm pseudomorphic HEMT technology exhibited a +17-dBm 1-dB output compression point with a 13.4-dB linear gain. In this thesis, the main system-level aspects of millimeter-wave transmitters and receivers are discussed and the experimental circuits of a 60-GHz transmitter front-end and a 60-GHz receiver with an on-chip analog-to-digital converter implemented in 65-nm CMOS are shown. The receiver exhibited a 7-dB noise figure, while the saturated output power of the transmitter front-end was +2 dBm. Furthermore, a wideband W-band transmitter front-end with an output power of +6.6 dBm suitable for both image-rejecting superheterodyne and direct-conversion transmission is demonstrated in 65-nm CMOS

Analog/RF Circuit Design Techniques for Nanometerscale IC Technologies

CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections