5 research outputs found
Simulation of nanostructure-based high-efficiency solar cells: challenges, existing approaches and future directions
Many advanced concepts for high-efficiency photovoltaic devices exploit the
peculiar optoelectronic properties of semiconductor nanostructures such as
quantum wells, wires and dots. While the optics of such devices is only
modestly affected due to the small size of the structures, the optical
transitions and electronic transport can strongly deviate from the simple bulk
picture known from conventional solar cell devices. This review article
discusses the challenges for an adequate theoretical description of the
photovoltaic device operation arising from the introduction of nanostructure
absorber and/or conductor components and gives an overview of existing device
simulation approaches.Comment: Invited paper, accepted for publication in IEEE Journal of Selected
Topics in Quantum Electronic
A revised ideal model for AlGaAs/GaAs quantum well solar cells
Quantum well solar cells (QWSCs) are heterostructure devices intended to achieve higher efficiencies than conventional cells. This paper extends a previous model for QWSC current–voltage characteristics by revising the equations for the absorbed flux and by introducing expressions to calculate radiative recombination coefficients and well effective densities-of-states. This revised model is in agreement with previous experimental results for AlGaAs/GaAs. Since the revised model incorporates detailed balance calculations, its predictions are consistent with the efficiency restrictions of this theory. The revised model, however, does predict efficiency enhancements for QWSCs in some configurations if non-radiative recombination is dominant, even in such a poor QWSC material as AlGaAs/GaAs
Semiconductor Infrared Devices and Applications
Infrared (IR) technologies—from Herschel’s initial experiment in the 1800s to thermal detector development in the 1900s, followed by defense-focused developments using HgCdTe—have now incorporated a myriad of novel materials for a wide variety of applications in numerous high-impact fields. These include astronomy applications; composition identifications; toxic gas and explosive detection; medical diagnostics; and industrial, commercial, imaging, and security applications. Various types of semiconductor-based (including quantum well, dot, ring, wire, dot in well, hetero and/or homo junction, Type II super lattice, and Schottky) IR (photon) detectors, based on various materials (type IV, III-V, and II-VI), have been developed to satisfy these needs. Currently, room temperature detectors operating over a wide wavelength range from near IR to terahertz are available in various forms, including focal plane array cameras. Recent advances include performance enhancements by using surface Plasmon and ultrafast, high-sensitivity 2D materials for infrared sensing. Specialized detectors with features such as multiband, selectable wavelength, polarization sensitive, high operating temperature, and high performance (including but not limited to very low dark currents) are also being developed. This Special Issue highlights advances in these various types of infrared detectors based on various material systems
太陽光発電材料としての有機金属化学堆積法によるInxGa1-xN 薄膜の電子状態および欠陥評価に関する研究
筑波大学 (University of Tsukuba)201