Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructures

We present a new magnetoelectronic device consisting of a µm-scale semiconductor cross junction and a patterned, electrically isolated, ferromagnetic overlayer with in-plane magnetization. The large local magnetic field emanating from the edge of the thin ferromagnetic film has a strong perpendicular magnetic component, B[perpendicular](r), which induces a Hall resistance, RH, in the microjunction. External application of a weak in-plane magnetic field reverses the magnetization of the ferromagnet and with it B[perpendicular](r), thus modulating RH. Our data demonstrate that this strong "local" Hall effect is operative at both cryogenic and room temperatures, and is promising for device applications such as field sensors or integrated nonvolatile memory cells

What constitutes a nanoswitch? A Perspective

Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W) information onto magnets. Many other new phenomena are being investigated for nano-electronic memory as described in Part II of this book. It seems natural to ask whether these advances in memory devices could also translate into a new class of logic devices. What makes logic devices different from memory is the need for one device to drive another and this calls for gain, directionality and input-output isolation as exemplified by the transistor. With this in mind we will try to present our perspective on how W and R devices in general, spintronic or otherwise, could be integrated into transistor-like switches that can be interconnected to build complex circuits without external amplifiers or clocks. We will argue that the most common switch used to implement digital logic based on complementary metal oxide semiconductor (CMOS) transistors can be viewed as an integrated W-R unit having an input-output asymmetry that give it gain and directionality. Such a viewpoint is not intended to provide any insight into the operation of CMOS switches, but rather as an aid to understanding how W and R units based on spins and magnets can be combined to build transistor-like switches. Next we will discuss the standard W and R units used for magnetic memory devices and present one way to integrate them into a single unit with the input electrically isolated from the output. But we argue that this integrated W-R unit would not provide the key property of gain. We will then show that the recently discovered giant spin Hall effect could be used to construct a W-R unit with gain and suggest other possibilities for spin switches with gain.Comment: 27 pages. To appear in Emerging Nanoelectronic Devices, Editors: An Chen, James Hutchby, Victor Zhirnov and George Bourianoff, John Wiley & Sons (to be published

Film Edge Nonlocal Spin Valves

Spintronics is a new paradigm for integrated digital electronics. Recently established as a niche for nonvolatile magnetic random access memory (MRAM), it offers new functionality while demonstrating low power and high speed performance. However, to reach high density spintronic technology must make a transition to the nanometer scale. Prototype devices are presently made using a planar geometry and have an area determined by the lithographic feature size, currently about 100 nm. Here we present a new nonplanar geometry in which one lateral dimension is given by a film thickness, the order of 10 nm. With this new approach, cell sizes can shrink by an order of magnitude. The geometry is demonstrated with a nonlocal spin valve, where we study devices with an injector/detector separation much less than the spin diffusion length.Comment: 10 pages, 3 figure

Transistor-Like Spin Nano-Switches: Physics and Applications

Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being widely used in magnetic memory devices. However, it is not clear if these advances could also be used to build logic devices

Magnetic Memory with Antiferromagnets and Multilayers

In the next 10 years, the demand for data storage will increase exponentially until current storage methods are economically untenable. The speed and energy efficiency of digital memory will need to be improved by at least a factor of 100-10,000 times. Magnetic memory offers a major energy efficiency improvement (> 100 times) because it can be integrated with voltage-controlled switching methods, like multiferroicity (i.e. strain-coupling), but it is also unfortunately speed limited by the material’s ferromagnetic resonance. To surpass the speed limit, ferromagnetic materials can be substituted by magnetic multilayers or antiferromagnets, since their resonances are 10-1000 times higher. However, further work is required to integrate these under-studied materials into the necessary highly energy efficient multiferroic control schemes. In this dissertation, three main problems are addressed regarding voltage control of multilayers and antiferromagnets. First, the level of exchange coupling and magnetic property averaging in multilayers is not well understood. In this dissertation, a novel micromagnetic simulation of multilayer is presented that includes a distinct multilayer exchange coupling term, and the model’s predictions are compared to experimental magnetic depth profiles obtained via neutron scattering. Second, a deficiency in the literature regarding strain control of antiferromagnets is corrected by presenting a new antiferromagnetic magneto-electro-mechanical model that predicts both near THz and aJ-level energy costs for switching. Finally, the first experimental test to measure strain-induced anisotropy in antiferromagnets is presented, showing that small strains (around 300 με) produces magnetoresistance changes similar to those observed when 3 Tesla of external magnetic field is applied. This work should provide new pathways to simulate and integrate next-generation materials choices into magnetic memory

Field-free deterministic ultra fast creation of skyrmions by spin orbit torques

Magnetic skyrmions are currently the most promising option to realize current-driven magnetic shift registers. A variety of concepts to create skyrmions were proposed and demonstrated. However, none of the reported experiments show controlled creation of single skyrmions using integrated designs. Here, we demonstrate that skyrmions can be generated deterministically on subnanosecond timescales in magnetic racetracks at artificial or natural defects using spin orbit torque (SOT) pulses. The mechanism is largely similar to SOT-induced switching of uniformly magnetized elements, but due to the effect of the Dzyaloshinskii-Moriya interaction (DMI), external fields are not required. Our observations provide a simple and reliable means for skyrmion writing that can be readily integrated into racetrack devices