Techniques of Energy-Efficient VLSI Chip Design for High-Performance Computing

How to implement quality computing with the limited power budget is the key factor to move very large scale integration (VLSI) chip design forward. This work introduces various techniques of low power VLSI design used for state of art computing. From the viewpoint of power supply, conventional in-chip voltage regulators based on analog blocks bring the large overhead of both power and area to computational chips. Motivated by this, a digital based switchable pin method to dynamically regulate power at low circuit cost has been proposed to make computing to be executed with a stable voltage supply. For one of the widely used and time consuming arithmetic units, multiplier, its operation in logarithmic domain shows an advantageous performance compared to that in binary domain considering computation latency, power and area. However, the introduced conversion error reduces the reliability of the following computation (e.g. multiplication and division.). In this work, a fast calibration method suppressing the conversion error and its VLSI implementation are proposed. The proposed logarithmic converter can be supplied by dc power to achieve fast conversion and clocked power to reduce the power dissipated during conversion. Going out of traditional computation methods and widely used static logic, neuron-like cell is also studied in this work. Using multiple input floating gate (MIFG) metal-oxide semiconductor field-effect transistor (MOSFET) based logic, a 32-bit, 16-operation arithmetic logic unit (ALU) with zipped decoding and a feedback loop is designed. The proposed ALU can reduce the switching power and has a strong driven-in capability due to coupling capacitors compared to static logic based ALU. Besides, recent neural computations bring serious challenges to digital VLSI implementation due to overload matrix multiplications and non-linear functions. An analog VLSI design which is compatible to external digital environment is proposed for the network of long short-term memory (LSTM). The entire analog based network computes much faster and has higher energy efficiency than the digital one

A 256-input micro-electrode array with integrated cmos amplifiers for neural signal recording

Thesis (Ph.D.)--Boston UniversityThe nervous system communicates and processes information through its basic structural units -- individual neurons (nerve cells). Neurons convey neural information via electrical and chemical signals, which makes electrophysiological recording techniques very important in the study of neurophysiology. Specifically, active microelectrode arrays (MEAs) with amplifiers integrated on the same substrate are used because they provide a very powerful neural electrical recording technique that can be directly interfaced to acute slices and cell cultures. 2D planer electrodes are typically used for recording from neural cultures in vitro, while in vivo recording in live animals invariably requires the use of 3D electrodes. I have designed an active MEA with neural amplifiers and 3D electrodes, all integrated on a single chip. The electrodes are commercially available 3D C4 (Controlled Collapse Chip Connect) flip-chip bonding solder balls that have a diameter of 100 µm and a pitch of 200 µm. An active MEA neural recording chip -- the Multiple-Input Neural Sensor (MINS) chip -- was designed and fabricated using the IBM BiCMOS 8HP 0.13 µm technology. The MINS IC has 256 input channels that are time-division multiplexed into two output pads. Each channel was designed to work at a 20 kHz frame rate with a total voltage gain of 60 dB per channel with an input-referred noise voltage of 5.3 µVrms over 10 Hz to 10 kHz. The entire MINS chip has an area of 4 x 4 mm^2 with 256 input C4s plus 20 wire-bond pads on two adjacent edges of the chip for power, control, and outputs. The fabricated MINS chips are wire-bonded to standard pin grid array (PGA), open-top PGA, and custom-designed printed circuit board (PCB) packages for electrical, in vitro, and in vivo testing, respectively. After process variation correction, the voltage gain of the 256 neural amplifiers, measured in vitro across several chips, has a mean value of 58.7 dB and a standard deviation of 0.37 dB. Measurements done with the electrical testing package demonstrate that the MINS IC has a flat frequency response from 0.05 Hz to 1.4 MHz, an input-referred noise voltage of 4.6 µVrms over 10 Hz to 10 kHz, an output voltage swing as large as 1.5 V peak-to-peak, and a total power consumption of 11.25 mW, or 43.9 µW per input channel

Arithmetic logic UNIT (ALU) design using reconfigurable CMOS logic

Using the reconfigurable logic of multi-input floating gate MOSFETs, a 4-bit ALU has been designed for 3V operation. The ALU can perform four arithmetic and four logical operations. Multi- input floating gate (MIFG) transistors have been promising in realizing increased functionality on a chip. A multi- input floating gate MOS transistor accepts multiple inputs signals, calculates the weighted sum of all input signals and then controls the ON and OFF states of the transistor. This enhances the transistor function to more than just switching. This changes the way a logic function can be realized. Implementing a design using multi-input floating gate MOSFETs brings about reduction in transis tor count and number of interconnections. The advantage of bringing down the number of devices is that a design becomes area efficient and power consumption reduces. There are several applications that stress on smaller chip area and reduced power. Multi- input floating gate devices have their use in memories, analog and digital circuits. In the present work we have shown successful implementation of multi- input floating gate MOSFETs in ALU design. A comparison has been made between adders using different design methods w.r.t transistor count. It is seen that our design, implemented using multi-input floating gate MOSFETs, uses the least number of transistors when compared to other designs. The design was fabricated using double polysilicon standard CMOS process by MOSIS in 1.5mm technology. The experimental waveforms and delay measurements have also been presented

Power supply current [IPS] based testing of CMOS amplifier circuit with and without floating gate input transistors

This work presents a case study, which attempts to improve the fault diagnosis and testability of the power supply current based testing methodology applied to a typical two-stage CMOS operational amplifier and is extended to operational amplifier with floating gate input transistors*. The proposed test method takes the advantage of good fault coverage through the use of a simple power supply current measurement based test technique, which only needs an ac input stimulus at the input and no additional circuitry. The faults simulating possible manufacturing defects have been introduced using the fault injection transistors. In the present work, variations of ac ripple in the power supply current IPS, passing through VDD under the application of an ac input stimulus is measured to detect injected faults in the CMOS amplifier. The effect of parametric variation is taken into consideration by setting tolerance limit of ± 5% on the fault-free IPS value. The fault is identified if the power supply current, IPS falls outside the deviation given by the tolerance limit. This method presented can also be generalized to the test structures of other floating-gate MOS analog and mixed signal integrated circuits

Ternary to binary converter design in CMOS using multiple input floating gate MOSFETS

In this work, a ternary to binary converter circuit is designed in 0.5μm n-well CMOS technology. The circuit takes two inputs corresponding to the ternary bits and gives four outputs, which are the binary equivalent bits of the ternary inputs. The ternary inputs range from (-1,-1)3 to (1,1) 3 which are decimal -4 to 4 and the four binary output bits are the sign bit (SB), most significant bit (MSB), second significant bit (SSB) and the least significant bit (LSB). The ternary inputs (-1, 0 and 1) are represented in terms of voltages of -3V, 0V and 3V. Multiple input floating gate (MIFG) MOSFETS are used in the design of ternary to binary converter. The four circuits to generate the SB, MSB, SSB and LSB outputs are designed separately and then connected together to perform the entire conversion. The MIFG MOSFET takes multiple input signals, which are the ternary inputs in this case and calculates the weighted sum of the inputs. This weighted sum of the inputs is called floating gate voltage and is given as input to the CMOS inverter. The CMOS inverter gives a high or low binary output depending on if the floating gate voltage is higher or lower than the threshold voltage of the CMOS inverter. The circuits are simulated using MOSIS BSIM level 7 model parameters. LEDIT version 13 is used for the layout and a total of 22 transistors are used in the design of the converter circuit. The floating gate of the transistor is simulated by not giving the input directly to the gate of the transistor. Instead inputs are fed to one end of the capacitors and the other end of the capacitors are tied together and given as an input to the inverter. The converter chip occupies an area of 1140 × 2090 μm2

A micropower centroiding vision processor

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Neuromorphic silicon neuron circuits

23 páginas, 21 figuras, 2 tablas.-- et al.Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.This work was supported by the EU ERC grant 257219 (neuroP), the EU ICT FP7 grants 231467 (eMorph), 216777 (NABAB), 231168 (SCANDLE), 15879 (FACETS), by the Swiss National Science Foundation grant 119973 (SoundRec), by the UK EPSRC grant no. EP/C010841/1, by the Spanish grants (with support from the European Regional Development Fund) TEC2006-11730-C03-01 (SAMANTA2), TEC2009-10639-C04-01 (VULCANO) Andalusian grant num. P06TIC01417 (Brain System), and by the Australian Research Council grants num. DP0343654 and num. DP0881219.Peer Reviewe

First order sigma-delta modulator of an oversampling ADC design in CMOS using floating gate MOSFETS

We report a new architecture for a sigma-delta oversampling analog-to-digital converter (ADC) in which the first order modulator is realized using the floating gate MOSFETs at the input stage of an integrator and the comparator. The first order modulator is designed using an 8 MHz sampling clock frequency and implemented in a standard 1.5µm n-well CMOS process. The decimator is an off-chip sinc-filter and is programmed using the VERILOG and tested with Altera Flex EPF10K70RC240 FPGA board. The ADC gives an 8-bit resolution with a 65 kHz bandwidth