A fully integrated low-power SiGe power amplifier for biomedical applications

In this work, a full-integrated very-low power SiGe Power Amplifier (PA) is realized using the IHP (Innovations for High Performance), 0.25μm-SiGe process. The behaviour of the amplifiers has been optimized for the 2.1-2.4 GHz frequency band for a higher 1-dB compression point and high efficiency at a lower supply voltage. The PA delivers an output power of 3.75 mW and 1.25 mW for 2V and 1V, respectively. The PA measurements yielded the following parameters; gain of 13 dB, 1-dB compression point of 5.7 dBm, and Power-Added-Efficiency of 30% for 2V supply voltage. The PA circuit can go down to 1V of supply voltage with a gain of 10 dB, 1-dB compression point of 1 dBm, and Power-Added-Efficiency of 20%. For both supply voltages, the input and the output of the circuit give good reflection performance. With this performance, the PA circuit may be used for low-power biomedical implanted transceiver systems

Fully integrated low-power SiGe power amplifier for biomedical applications

A full-integrated very low-power SiGe power amplifier (PA) is realised using the innovations for high performance, 0.25 mu m SiGe process. The behaviour of the amplifiers has been optimised for the 2.1-2.4 GHz frequency band for a higher 1 dB compression point and high efficiency at a lower supply voltage. The PA delivers an output power of 3.75 and 1.25 mW for 2 and 1 V, respectively. The PA measurements yielded the following parameters: gain of 13 dB, 1 dB compression point of 5.7 dBm, and power added efficiency of 30% for 2 V supply voltage. The PA circuit can go down to 1 V of supply voltage with a gain of 10 dB, 1 dB compression point of 1 dBm, and power added efficiency of 20%. For both supply voltages, the input and the output of the circuit give good reflection performance. With this performance, the PA circuit may be used for low-power biomedical implanted transceiver systems

System-level design and RF front-end implementation for a 3-10ghz multiband-ofdm ultrawideband receiver and built-in testing techniques for analog and rf integrated circuits

This work consists of two main parts: a) Design of a 3-10GHz UltraWideBand (UWB) Receiver and b) Built-In Testing Techniques (BIT) for Analog and RF circuits. The MultiBand OFDM (MB-OFDM) proposal for UWB communications has received significant attention for the implementation of very high data rate (up to 480Mb/s) wireless devices. A wideband LNA with a tunable notch filter, a downconversion quadrature mixer, and the overall radio system-level design are proposed for an 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB implemented in a 0.25mm BiCMOS process. The packaged IC includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The receiver IC mounted on a FR-4 substrate provides a maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply. Two BIT techniques for analog and RF circuits are developed. The goal is to reduce the test cost by reducing the use of analog instrumentation. An integrated frequency response characterization system with a digital interface is proposed to test the magnitude and phase responses at different nodes of an analog circuit. A complete prototype in CMOS 0.35mm technology employs only 0.3mm2 of area. Its operation is demonstrated by performing frequency response measurements in a range of 1 to 130MHz on 2 analog filters integrated on the same chip. A very compact CMOS RF RMS Detector and a methodology for its use in the built-in measurement of the gain and 1dB compression point of RF circuits are proposed to address the problem of on-chip testing at RF frequencies. The proposed device generates a DC voltage proportional to the RMS voltage amplitude of an RF signal. A design in CMOS 0.35mm technology presents and input capacitance <15fF and occupies and area of 0.03mm2. The application of these two techniques in combination with a loop-back test architecture significantly enhances the testability of a wireless transceiver system

A Wideband and Low-Loss Spatial Power Combining Module for mm-Wave High-Power Amplifiers

We present a low-loss power combiner, providing a highly integrated interface from an array of mm-wave power amplifiers (PAs) to a single standard rectangular waveguide (WG). The PAs are connected to an array of parallel and strongly coupled microstrip lines that excite a substrate integrated waveguide (SIW) based cavity. The spatially distributed modes then couple from the cavity to the rectangular WG mode through an etched aperture and two stepped ridges embedded in the WG flange. A new co-design procedure for the PA-integrated power combining module is presented that targets optimal system-level performance: output power, efficiency, linearity. A commercial SiGe quad-channel configurable transmitter and a standard gain horn antenna were interfaced to both ends of this module to experimentally demonstrate the proposed power combining concept. Since the combiner input ports are non-isolated, we have investigated the effects of mutual coupling on the transmitter performance by using a realistic PA model. This study has shown acceptable relative phase and amplitude differences between the PAs, . within +/- 15 degrees and +/- 1 dB. The increase of generated output power with respect to a single PA at the 1-dB compression point remains virtually constant (5.5 dB) over a 42% bandwidth. The performed statistical active load variation indicates that the interaction between the PAs through the combiner has negligible effect on the overall linearity. Furthermore, the antenna pattern measured with this combiner shows negligible deformation due to non-identical PAs. This represents experimental prove-of-concept of the proposed spatial power combining module, which can be suitable for applications in MIMO array transmitters with potentially coupled array channels

A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design

Integrated radio frequency synthetizers for wireless applications

This thesis consists of six publications and an overview of the research topic, which is also a summary of the work. The research described in this thesis concentrates on the design of phase-locked loop radio frequency synthesizers for wireless applications. In particular, the focus is on the implementation of the prescaler, the phase detector, and the chargepump. This work reviews the requirements set for the frequency synthesizer by the wireless standards, and how these requirements are derived from the system specifications. These requirements apply to both integer-N and fractional-N synthesizers. The work also introduces the special considerations related to the design of fractional-N phase-locked loops. Finally, implementation alternatives for the different building blocks of the synthesizer are reviewed. The presented work introduces new topologies for the phase detector and the chargepump, and improved topologies for high speed CMOS prescalers. The experimental results show that the presented topologies can be successfully used in both integer-N and fractional-N synthesizers with state-of-the-art performance. The last part of this work discusses the additional considerations that surface when the synthesizer is integrated into a larger system chip. It is shown experimentally that the synthesizer can be successfully integrated into a complex transceiver IC without sacrificing the performance of the synthesizer or the transceiver.reviewe

SiGe BiCMOS front-end circuits for X-Band phased arrays

The current Transmit/Receive (T/R) modules have typically been implemented using GaAs- and InP-based discrete monolithic microwave integrated circuits (MMIC) to meet the high performance requirement of the present X-Band phased arrays. However their cost, size, weight, power consumption and complexity restrict phased array technology only to certain military and satellite applications which can tolerate these limitations. Therefore, next generation X-Band phased array radar systems aim to use low cost, silicon-based fully integrated T/R modules. For this purpose, this thesis explores the design of T/R module front-end building blocks based on new approaches and techniques which can pave the way for implementation of fully integrated X-Band phased arrays in low-cost SiGe BiCMOS process. The design of a series-shunt CMOS T/R switch with the highest IP1dB, compared to other reported works in the literature is presented. The design focuses on the techniques, primarily, to achieve higher power handling capability (IP1dB), along with higher isolation and better insertion loss of the T/R switch. Also, a new T/R switch was implemented using shunt NMOS transistors and slow-wave quarter wavelength transmission lines. It presents the utilization of slow-wave transmissions lines in T/R switches for the first time in any BiCMOS technology to the date. A fully integrated DC to 20 GHz SPDT switch based on series-shunt topology was demonstrated. The resistive body oating and on-chip impedance transformation networks (ITN) were used to improve power handling of the switch. An X-Band high performance low noise ampli er (LNA) was implemented in 0.25 μm SiGe BiCMOS process. The LNA consists of inductively degenerated two cascode stages with high speed SiGe HBT devices to achieve low noise gure (NF), high gain and good matching at the input and output, simultaneously. The performance parameters of the LNA collectively constitute the best Figure-of-Merit value reported in similar technologies, to the best of author's knowledge. Furthermore, a switched LNA was implemented SiGe BiCMOS process for the first time at X-Band. The resistive body floating technique was incorporated in switched LNA design, for the first time, to improve the linearity of the circuit further in bypass mode. Finally, a complete T/R module with a state-of-the-art performance was implemented using the individually designed blocks. The simulations results of the T/R module is presented in the dissertation. The state-of-the-art performances of the presented building blocks and the complete module are attributed to the unique design methodologies and techniques

Design and implementation of frequency synthesizers for 3-10 ghz mulitband ofdm uwb communication

The allocation of frequency spectrum by the FCC for Ultra Wideband (UWB) communications in the 3.1-10.6 GHz has paved the path for very high data rate Gb/s wireless communications. Frequency synthesis in these communication systems involves great challenges such as high frequency and wideband operation in addition to stringent requirements on frequency hopping time and coexistence with other wireless standards. This research proposes frequency generation schemes for such radio systems and their integrated implementations in silicon based technologies. Special emphasis is placed on efficient frequency planning and other system level considerations for building compact and practical systems for carrier frequency generation in an integrated UWB radio. This work proposes a frequency band plan for multiband OFDM based UWB radios in the 3.1-10.6 GHz range. Based on this frequency plan, two 11-band frequency synthesizers are designed, implemented and tested making them one of the first frequency synthesizers for UWB covering 78% of the licensed spectrum. The circuits are implemented in 0.25µm SiGe BiCMOS and the architectures are based on a single VCO at a fixed frequency followed by an array of dividers, multiplexers and single sideband (SSB) mixers to generate the 11 required bands in quadrature with fast hopping in much less than 9.5 ns. One of the synthesizers is integrated and tested as part of a 3-10 GHz packaged receiver. It draws 80 mA current from a 2.5 V supply and occupies an area of 2.25 mm2. Finally, an architecture for a UWB synthesizer is proposed that is based on a single multiband quadrature VCO, a programmable integer divider with 50% duty cycle and a single sideband mixer. A frequency band plan is proposed that greatly relaxes the tuning range requirement of the multiband VCO and leads to a very digitally intensive architecture for wideband frequency synthesis suitable for implementation in deep submicron CMOS processes. A design in 130nm CMOS occupies less than 1 mm2 while consuming 90 mW. This architecture provides an efficient solution in terms of area and power consumption with very low complexity

Design of frequency synthesizers for short range wireless transceivers

The rapid growth of the market for short-range wireless devices, with standards such as Bluetooth and Wireless LAN (IEEE 802.11) being the most important, has created a need for highly integrated transceivers that target drastic power and area reduction while providing a high level of integration. The radio section of the devices designed to establish communications using these standards is the limiting factor for the power reduction efforts. A key building block in a transceiver is the frequency synthesizer, since it operates at the highest frequency of the system and consumes a very large portion of the total power in the radio. This dissertation presents the basic theory and a design methodology of frequency synthesizers targeted for short-range wireless applications. Three different examples of synthesizers are presented. First a frequency synthesizer integrated in a Bluetooth receiver fabricated in 0.35μm CMOS technology. The receiver uses a low-IF architecture to downconvert the incoming Bluetooth signal to 2MHz. The second synthesizer is integrated within a dual-mode receiver capable of processing signals of the Bluetooth and Wireless LAN (IEEE 802.11b) standards. It is implemented in BiCMOS technology and operates the voltage controlled oscillator at twice the required frequency to generate quadrature signals through a divide-by-two circuit. A phase switching prescaler is featured in the synthesizer. A large capacitance is integrated on-chip using a capacitance multiplier circuit that provides a drastic area reduction while adding a negligible phase noise contribution. The third synthesizer is an extension of the second example. The operation range of the VCO is extended to cover a frequency band from 4.8GHz to 5.85GHz. By doing this, the synthesizer is capable of generating LO signals for Bluetooth and IEEE 802.11a, b and g standards. The quadrature output of the 5 - 6 GHz signal is generated through a first order RC - CR network with an automatic calibration loop. The loop uses a high frequency phase detector to measure the deviation from the 90° separation between the I and Q branches and implements an algorithm to minimize the phase errors between the I and Q branches and their differential counterparts

Ultra-Low Power Wake Up Receiver For Medical Implant Communications Service Transceiver

This thesis explores the specific requirements and challenges for the design of a dedicated wake-up receiver for medical implant communication services equipped with a novel “uncertain-IF†architecture combined with a high – Q filtering MEMS resonator and a free running CMOS ring oscillator as the RF LO. The receiver prototype, implements an IBM 0.18μm mixed-signal 7ML RF CMOS technology and achieves a sensitivity of -62 dBm at 404MHz while consuming \u3c100 μW from a 1 V supply