An Octave-Range, Watt-Level, Fully-Integrated CMOS Switching Power Mixer Array for Linearization and Back-Off-Efficiency Improvement

The power mixer array is presented as a novel power generation approach for non-constant envelope signals. It comprises several power mixer units that are dynamically turned on and off to improve the linearity and back-off efficiency. At the circuit level, the power mixer unit can operate as a switching amplifier to achieve high peak power efficiency. Additional circuit level linearization and back-off efficiency improvement techniques are also proposed. To demonstrate the feasibility of this idea, a fully-integrated octave-range CMOS power mixer array is implemented in a 130 nm CMOS process. It is operational between 1.2 GHz and 2.4 GHz and can generate an output power of +31.3 dBm into an external 50 Ω load with a PAE of 42% and a gain compression of only 0.4 dB at 1.8 GHz. It achieves a PAE of 25%, at an average output power of +26.4 dBm, and an EVM of 4.6% with a non-constant-envelope 16 QAM signal. It can also produce arbitrary signal levels down to -70 dBm of output power with the 16 QAM-modulated signal without any RF gain control circuit

A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and Antennas

In this paper, we present the receiver and the on-chip antenna sections of a fully integrated 77-GHz four-element phased-array transceiver with on-chip antennas in silicon. The receiver section of the chip includes the complete down-conversion path comprising low-noise amplifier (LNA), frequency synthesizer, phase rotators, combining amplifiers, and on-chip dipole antennas. The signal combining is performed using a novel distributed active combining amplifier at an IF of 26 GHz. In the LO path, the output of the 52-GHz VCO is routed to different elements and can be phase shifted locally by the phase rotators. A silicon lens on the backside is used to reduce the loss due to the surface-wave power of the silicon substrate. Our measurements show a single-element LNA gain of 23 dB and a noise figure of 6.0 dB. Each of the four receive paths has a gain of 37 dB and a noise figure of 8.0 dB. Each on-chip antenna has a gain of +2 dBi

Low-power CMOS front-ends for wireless personal area networks

The potential of implementing subthreshold radio frequency circuits in deep sub-micron CMOS technology was investigated for developing low-power front-ends for wireless personal area network (WPAN) applications. It was found that the higher transconductance to bias current ratio in weak inversion could be exploited in developing low-power wireless front-ends, if circuit techniques are employed to mitigate the higher device noise in subthreshold region. The first fully integrated subthreshold low noise amplifier was demonstrated in the GHz frequency range requiring only 260 μW of power consumption. Novel subthreshold variable gain stages and down-conversion mixers were developed. A 2.4 GHz receiver, consuming 540 μW of power, was implemented using a new subthreshold mixer by replacing the conventional active low noise amplifier by a series-resonant passive network that provides both input matching and voltage amplification. The first fully monolithic subthreshold CMOS receiver was also implemented with integrated subthreshold quadrature LO (Local Oscillator) chain for 2.4 GHz WPAN applications. Subthreshold operation, passive voltage amplification, and various low-power circuit techniques such as current reuse, stacking, and differential cross coupling were combined to lower the total power consumption to 2.6 mW. Extremely compact resistive feedback CMOS low noise amplifiers were presented as a cost-effective alternative to narrow band LNAs using high-Q inductors. Techniques to improve linearity and reduce power consumption were presented. The combination of high linearity, low noise figure, high broadband gain, extremely small die area and low power consumption made the proposed LNA architecture a compelling choice for many wireless applications.Ph.D.Committee Chair: Laskar, Joy; Committee Member: Chakraborty, Sudipto; Committee Member: Chang, Jae Joon; Committee Member: Divan, Deepakraj; Committee Member: Kornegay, Kevin; Committee Member: Tentzeris, Emmanoui

The design of active resistors and transductors in a CMOS technology

Merged with duplicate record 10026.1/2618 on 07.20.2017 by CS (TIS)This thesis surveys linearisation techniques for implementing monolithic MOS active resistors and transconductors, and investigates the design of linear tunable resistors and transconductors. Improving linearity and tunability in the presence of non-ideal factors such as bulk modulation, mobility-degradation effects and mismatch of transistors is a principal objective. A family of new non-saturation-mode resistors and two novel saturation-mode transconductors are developed. Where possible, approximate analytical expressions are derived to explain the principles of operation. Performance comparisons of the new structures are made with other well-known circuits and their relative advantages and disadvantages evaluated. Experimental and simulation results are presented which validate the proposed linearisation techniques. It is shown that the proposed family of resistors offers improved linearity whilst the transconductors combine extended tunability with low distortion. Continuous-time filter examples are given to demonstrate the potential of these circuits for application in analogue signal-processing tasks.GEC Plessey Semiconductors, Plymout

A wideband linear tunable CDTA and its application in field programmable analogue array

This document is the Accepted Manuscript version of the following article: Hu, Z., Wang, C., Sun, J. et al. ‘A wideband linear tunable CDTA and its application in field programmable analogue array’, Analog Integrated Circuits and Signal Processing, Vol. 88 (3): 465-483, September 2016. Under embargo. Embargo end date: 6 June 2017. The final publication is available at Springer via https://link.springer.com/article/10.1007%2Fs10470-016-0772-7 © Springer Science+Business Media New York 2016In this paper, a NMOS-based wideband low power and linear tunable transconductance current differencing transconductance amplifier (CDTA) is presented. Based on the NMOS CDTA, a novel simple and easily reconfigurable configurable analogue block (CAB) is designed. Moreover, using the novel CAB, a simple and versatile butterfly-shaped FPAA structure is introduced. The FPAA consists of six identical CABs, and it could realize six order current-mode low pass filter, second order current-mode universal filter, current-mode quadrature oscillator, current-mode multi-phase oscillator and current-mode multiplier for analog signal processing. The Cadence IC Design Tools 5.1.41 post-layout simulation and measurement results are included to confirm the theory.Peer reviewedFinal Accepted Versio

A low power low noise high accuracy sensor IC

I investigated the design and implementation of low power low noise and high accuracy sensor IC for recording neural activity and studying sleep and other behavior in small animals. The sensor IC can acquire 16 electrophysiology signals in mice. It consists of 16 amplifier channels, a digital control circuit and a 16-bit 500 KSps charge redistribution self-calibrating successive approximation analog-to-digital converter (ADC). Each channel includes programmable gains from 12 to 250, a 7K Hz low-pass 2nd-order Butterworth filter and a track and hold. The integrated noise from 1 Hz to 7K Hz is 2.5 μV for 0 V DC offset input, 3.76 μV for 0.3 V DC offset input and 5.3 μV for –0.3 V DC offset input. The power supply rejection ratios (PSRR) for VDD and VSS are 61 db and 51 db at 1K Hz. The +/-0.3 V DC input offset of each channel is cancelled with two 5-bit DACs controlling the positive input node of the 2nd gain stage and 3rd gain stage op-amps. Total power dissipation is 1.2 mW for each amplifier channel with a +/- 1.5 V power supply. The 16-bit 500 KSps ADC has an input range of 2 V, a resolution of 16 bits, 6.2 mW power consumption and operates with +/- 1.5 V power supplies. Simulations show a signal-to-noise ratio of 90 dB for an effective accuracy of 15 bits in v TSMC’s 0.25μ CMOS process. A novel interleaving architecture and an improved comparator design contribute to reducing the power while maintaining the accuracy and speed. The ADC is intended to digitize the amplified neurophysiological signals from the companion 16-amplifier-channel IC. The amplifier channel IC die area is 19 mm2 and the ADC die area is 7 mm2 in TSMC’s 0.25μ CMOS process

Design of Power/Analog/Digital Systems Through Mixed-Level Simulations

In recent years the development of the applications in the field of telecommunications, data processing, control, renewable energy generation, consumer and automotive electronics determined the need for increasingly complex systems, also in shorter time to meet the growing market demand. The increasing complexity is mainly due to the mixed nature of these systems that must be developed to accommodate the new functionalities and to satisfy the more stringent performance requirements of the emerging applications. This means a more complex design and verification process. The key to managing the increased design complexity is a structured and integrated design methodology which allows the sharing of different circuit implementations that can be at transistor level and/or at a higher level (i.e.HDL languages).In order to expedite the mixed systems design process it is necessary to provide: an integrated design methodology; a suitable supporting tool able to manage the entire design process and design complexity and its successive verification.It is essential that the different system blocks (power, analog, digital), described at different level of abstraction, can be co-simulated in the same design context. This capability is referred to as mixed-level simulation.One of the objectives of this research is to design a mixed system application referred to the control of a coupled step-up dc-dc converter. This latter consists of a power stage designed at transistor-level, also including accurate power device models, and the analog controller implemented using VerilogA modules. Digital controllers are becoming very attractive in dc-dc converters for their programmability, ability to implement sophisticated control schemes, and ease of integration with other digital systems. Thus, in this dissertation it will be presented a detailed design of a Flash Analog-to-Digital Converter (ADC). The designed ADC provides medium-high resolution associated to high-speed performance. This makes it useful not only for the control application aforementioned but also for applications with huge requirements in terms of speed and signal bandwidth. The entire design flow of the overall system has been conducted in the Cadence Design Environment that also provides the ability to mixed-level simulations. Furthermore, the technology process used for the ADC design is the IHP BiCMOS 0.25 µm by using 50 GHz NPN HBT devices