SuperCam, a 64-pixel heterodyne imaging array for the 870 micron atmospheric window

We report on the development of SuperCam, a 64 pixel, superheterodyne camera designed for operation in the astrophysically important 870 micron atmospheric window. SuperCam will be used to answer fundamental questions about the physics and chemistry of molecular clouds in the Galaxy and their direct relation to star and planet formation. The advent of such a system will provide an order of magnitude increase in mapping speed over what is now available and revolutionize how observational astronomy is performed in this important wavelength regime. Unlike the situation with bolometric detectors, heterodyne receiver systems are coherent, retaining information about both the amplitude and phase of the incident photon stream. From this information a high resolution spectrum of the incident light can be obtained without multiplexing. SuperCam will be constructed by stacking eight, 1x8 rows of fixed tuned, SIS mixers. The IF output of each mixer will be connected to a low-noise, broadband MMIC amplifier integrated into the mixer block. The instantaneous IF bandwidth of each pixel will be ~2 GHz, with a center frequency of 5 GHz. A spectrum of the central 500 MHz of each IF band will be provided by the array spectrometer. Local oscillator power is provided by a frequency multiplier whose output is divided between the pixels by using a matrix of waveguide power dividers. The mixer array will be cooled to 4K by a closed-cycle refrigeration system. SuperCam will reside at the Cassegrain focus of the 10m Heinrich Hertz telescope (HHT). A prototype single row of the array will be tested on the HHT in 2006, with the first engineering run of the full array in late 2007. The array is designed and constructed so that it may be readily scaled to higher frequencies.Comment: 12 pages, 14 figures, to be published in the Proceedings of SPIE Vol. 6275, "Astronomical Telescopes and Instrumentation, Millimeter and Submillimeter Detectors and Instrumentation for Astronomy III

Enabling Solutions for Integration and Interconnectivity in Millimeter-wave and Terahertz Systems

Recently, Terahertz (THz) systems have witnessed increasing attention due to the continuous need for high data rate transmission which is mainly driven by next-generation telecommunication and imaging systems. In that regard, the THz range emerged as a potential domain suitable for realizing such systems by providing a wide bandwidth capable of achieving and meeting the market requirements. However, the realization of such systems faces many challenges, one of which is interconnectivity and high level of integration. Conventional packaging techniques would not be suitable from performance perspective above 100 GHz and new approaches need to be developed. This thesis proposes and demonstrates several approaches to implement interconnects that operate above 100 GHz. One of the most attractive techniques discussed in this work is to implement on-chip coupling structures and insert the monolithic microwave integrated circuit (MMIC) directly into a waveguide (WG). Such approach provides high level of integration and eliminates the need of galvanic contacts; however, it suffers from a major drawback which isthe propagation of parasitic modes in the circuit cavity if the MMIC is large enough to allow such modes to propagate. To mitigate this problem, this work suggests and investigates the use of electromagnetic bandgap (EBG) structures that suppresses those modes such as bed of nails and mushroom-type EBG structures. The proposed techniques are used to implement several on-chip packaging solutions that have an insertion loss as low as 0.6 dB at D-band (110-170 GHz). Moreover, the solutions are demonstrated in several active systems using various commercial MMIC technologies. The thesis also investigates the possibility of utilizing the commercially available packaging technologies such as Embedded Wafer Level Ball Grid Array (eWLB) packaging. Such technology has been widely used for integrated circuits operating below 100 GHz but was not attempted in the THz range before. This work attempts to push the limits of the technology and proposes novel solutions based on coupling structures implemented in the technology’s redistribution layers. The proposed solutions achieve reasonable performance at D-band that are suitable for low-cost mass production while allowing heterogeneous integration with other technologies as well. This work addresses integration challenges facing systems operating in the THz range and proposes high-performance interconnectivity solutions demonstrated in a wide range of commercial technologies and hence enables such systems to reach their full potential and meet the increasing market demands

TERASENSE: THz device technology laboratory

The use of THz frequencies, particularly W and G band allows reaching higher resolution and deeper penetration in emerging applications like imaging, sensing, etc. The development of those new applications lays on reliable technologies, background of expertise and know-how. The CDS2008-00068 TERASENSE CONSOLIDER project has given the opportunity to extent upwards in frequency the previous background of the microwaves research group partners. This article summarizes the developments of the TERASENSE work package “THz Device Technology Laboratory”

Packages for Terahertz Electronics

In the last couple of decades, solid-state device technologies, particularly electronic semiconductor devices, have been greatly advanced and investigated for possible adoption in various terahertz (THz) applications, such as imaging, security, and wireless communications. In tandem with these investigations, researchers have been exploring ways to package those THz electronic devices and integrated circuits for practical use. Packages are fundamentally expected to provide a physical housing for devices and integrated circuits (ICs) and reliable signal interconnections from the inside to the outside or vice versa. However, as frequency increases, we face several challenges associated with signal loss, dimensions, and fabrication. This paper provides a broad overview of recent progress in interconnections and packaging technologies dealing with these issues for THz electronics. In particular, emerging concepts based on commercial ceramic technologies, micromachining, and 3-D printing technologies for compact and lightweight packaging in practical applications are highlighted, along with metallic split blocks with rectangular waveguides, which are still considered the most valid and reliable approach.119Ysciescopu

TERASENSE: THz device technology laboratory: final summary

The use of THz frequencies, particularly W and G band allows reaching higher resolution and deeper penetration in emerging applications like imaging, sensing, etc. The development of those new applications lays on reliable technologies, background of expertise and know-how. The CDS2008-00068 TERASENSE CONSOLIDER project has given the opportunity to extent upwards in frequency the previous background of the microwaves research group partners. This article summarizes the developments of the TERASENSE work package “THz Device Technology Laboratory”.This work was supported by the Spanish Ministerio de Ciencia e Innovación through the CONSOLIDER-INGENIO 2010 program reference CSD2008-00068 TERASENSE

Planck-LFI 44-GHz back end module

This work describes the principle of operation, assembly and performance of one branch of the 44 GHz back end module (BEM) for the Planck low frequency instrument (LFI). This subsystem constitutes a fully representative branch of the qualification-model version (QM). It includes waveguide to microstrip transition, GaAs pseudomorphic high electron mobility transistor (PHEMT) low noise amplifiers (LNA), bandpass filter, square-law detector and dc amplifier. The fundamentals of the design of the RF part are described and all of the components have been tested individually before integration. Using single tone and wideband noise stimuli, the output voltage has been measured for several input powers, in order to obtain the sensitivity factor of the complete BEM. The effective bandwidth and the equivalent noise temperature have been calculated from the measurements, taking into account the frequency dependence on the noise source and the BEM. Finally, the low frequency output power spectrum has been obtained and a maximum 1/f knee frequency around 200 Hz has been measured with a 3 dB output signal video bandwidth above 50 KHz.Peer Reviewe

Miniaturized Resonator and Bandpass Filter for Silicon-Based Monolithic Microwave and Millimeter-Wave Integrated Circuits

© 2018 IEEE. © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.This paper introduces a unique approach for the implementation of a miniaturized on-chip resonator and its application for the first-order bandpass filter (BPF) design. This approach utilizes a combination of a broadside-coupling technique and a split-ring structure. To fully understand the principle behind it, simplified LC equivalent-circuit models are provided. By analyzing these models, guidelines for implementation of an ultra-compact resonator and a BPF are given. To further demonstrate the feasibility of using this approach in practice, both the implemented resonator and the filter are fabricated in a standard 0.13-μm (Bi)-CMOS technology. The measured results show that the resonator can generate a resonance at 66.75 GHz, while the BPF has a center frequency at 40 GHz and an insertion loss of 1.7 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.012mm 2 (0.08 × 0.144 mm 2).Peer reviewe