A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.A fully-integrated reconfigurable dual-band (760-960 MHz and 2.4-2.5 GHz) transceiver (TRX) for short range wireless communications is presented. The TRX consists of two individually-optimized RF front-ends for each band and one shared power-scalable analog baseband. The sub-GHz receiver has achieved the maximum 75 dBc 3rd-order harmonic rejection ratio (HRR3) by inserting a Q-enhanced notch filtering RF amplifier (RFA). In 2.4 GHz band, a single-ended-to-differential RFA with gain/phase imbalance compensation is proposed in the receiver. A ΣΔ fractional-N PLL frequency synthesizer with two switchable Class-C VCOs is employed to provide the LOs. Moreover, the integrated multi-mode PAs achieve the output P1dB (OP1dB) of 16.3 dBm and 14.1 dBm with both 25% PAE for sub-GHz and 2.4 GHz bands, respectively. A power-control loop is proposed to detect the input signal PAPR in real-time and flexibly reconfigure the PA's operation modes to enhance the back-off efficiency. With this proposed technique, the PAE of the sub-GHz PA is improved by x3.24 and x1.41 at 9 dB and 3 dB back-off powers, respectively, and the PAE of the 2.4 GHz PA is improved by x2.17 at 6 dB back-off power. The presented transceiver has achieved comparable or even better performance in terms of noise figure, HRR, OP1dB and power efficiency compared with the state-of-the-art.Peer reviewe

Integrated phased array systems in silicon

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-μm silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-μm CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications

Transceiver architectures and sub-mW fast frequency-hopping synthesizers for ultra-low power WSNs

Wireless sensor networks (WSN) have the potential to become the third wireless revolution after wireless voice networks in the 80s and wireless data networks in the late 90s. This revolution will finally connect together the physical world of the human and the virtual world of the electronic devices. Though in the recent years large progress in power consumption reduction has been made in the wireless arena in order to increase the battery life, this is still not enough to achieve a wide adoption of this technology. Indeed, while nowadays consumers are used to charge batteries in laptops, mobile phones and other high-tech products, this operation becomes infeasible when scaled up to large industrial, enterprise or home networks composed of thousands of wireless nodes. Wireless sensor networks come as a new way to connect electronic equipments reducing, in this way, the costs associated with the installation and maintenance of large wired networks. To accomplish this task, it is necessary to reduce the energy consumption of the wireless node to a point where energy harvesting becomes feasible and the node energy autonomy exceeds the life time of the wireless node itself. This thesis focuses on the radio design, which is the backbone of any wireless node. A common approach to radio design for WSNs is to start from a very simple radio (like an RFID) adding more functionalities up to the point in which the power budget is reached. In this way, the robustness of the wireless link is traded off for power reducing the range of applications that can draw benefit form a WSN. In this thesis, we propose a novel approach to the radio design for WSNs. We started from a proven architecture like Bluetooth, and progressively we removed all the functionalities that are not required for WSNs. The robustness of the wireless link is guaranteed by using a fast frequency hopping spread spectrum technique while the power budget is achieved by optimizing the radio architecture and the frequency hopping synthesizer Two different radio architectures and a novel fast frequency hopping synthesizer are proposed that cover the large space of applications for WSNs. The two architectures make use of the peculiarities of each scenario and, together with a novel fast frequency hopping synthesizer, proved that spread spectrum techniques can be used also in severely power constrained scenarios like WSNs. This solution opens a new window toward a radio design, which ultimately trades off flexibility, rather than robustness, for power consumption. In this way, we broadened the range of applications for WSNs to areas in which security and reliability of the communication link are mandatory

Energy-efficient modulation and physical layer design for low terahertz band communication channel in 5G femtocell Internet of Things

© 2018 Elsevier B.V. High throughput capability of the terahertz band (0.3–10 THz) wireless communications is expected to be utilized by the fifth generation of mobile telecommunication systems and enable a plethora of new applications. Supporting devices will transfer large amounts of data in both directions, causing high energy consumption by the electronic circuitries of the equipment in use. Therefore, physical layer for these systems must be designed carefully in order to reduce energy consumption per bit. In this paper, the best performing modulation scheme and hardware parameters that minimize the energy consumption without affecting the system throughput are determined. THz band device technologies are outlined and a complete survey of the state-of-the-art low-THz band circuit blocks which are suitable for mass market production is given. It is shown that for short-range communications, M-ary quadrature amplitude modulation is the most energy-efficient technique that can lead up to 90% reduction in consumed energy. Moreover, optimal transceiver parameters which can be used to further minimize the energy consumption of the THz band system are examined

System-level design and RF front-end implementation for a 3-10ghz multiband-ofdm ultrawideband receiver and built-in testing techniques for analog and rf integrated circuits

This work consists of two main parts: a) Design of a 3-10GHz UltraWideBand (UWB) Receiver and b) Built-In Testing Techniques (BIT) for Analog and RF circuits. The MultiBand OFDM (MB-OFDM) proposal for UWB communications has received significant attention for the implementation of very high data rate (up to 480Mb/s) wireless devices. A wideband LNA with a tunable notch filter, a downconversion quadrature mixer, and the overall radio system-level design are proposed for an 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB implemented in a 0.25mm BiCMOS process. The packaged IC includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The receiver IC mounted on a FR-4 substrate provides a maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply. Two BIT techniques for analog and RF circuits are developed. The goal is to reduce the test cost by reducing the use of analog instrumentation. An integrated frequency response characterization system with a digital interface is proposed to test the magnitude and phase responses at different nodes of an analog circuit. A complete prototype in CMOS 0.35mm technology employs only 0.3mm2 of area. Its operation is demonstrated by performing frequency response measurements in a range of 1 to 130MHz on 2 analog filters integrated on the same chip. A very compact CMOS RF RMS Detector and a methodology for its use in the built-in measurement of the gain and 1dB compression point of RF circuits are proposed to address the problem of on-chip testing at RF frequencies. The proposed device generates a DC voltage proportional to the RMS voltage amplitude of an RF signal. A design in CMOS 0.35mm technology presents and input capacitance <15fF and occupies and area of 0.03mm2. The application of these two techniques in combination with a loop-back test architecture significantly enhances the testability of a wireless transceiver system

Ultra high data rate CMOS FEs

The availability of numerous mm-wave frequency bands for wireless communication has motived the exploration of multi-band and multi-mode integrated components and systems in the main stream CMOS technology. This opportunity has faced the RF designer with the transition between schematic and layout. Modeling the performance of circuits after layout and taking into account the parasitic effects resulting from the layout are two issues that are more important and influential at high frequency design. Performaning measurements using on-wafer probing at 60GHz has its own complexities. The very short wave-length of the signals at mm-wave frequencies makes the measurements very sensitiv to the effective length and bending of the interfaces. This paper presents different 60GHz corner blocks, e.g. Low Noise Amplifier, Zero IF mixer, Phase-Locked Loop, A Dual-Mode Mm-Wave Injection-Locked Frequency Divider and an active transformed power amplifiers implemented in CMOS technologies. These results emphasize the feasibility of the realization 60GHZ integrated components and systems in the main stream CMOS technology

Wireless body sensor networks for health-monitoring applications

This is an author-created, un-copyedited version of an article accepted for publication in Physiological Measurement. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0967-3334/29/11/R01