3 research outputs found

    Design and implementation of a sliding-mode controller for digital low-dropout/linear regulators

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    This paper presents an approach to utilize of sliding-mode (SM) controller in digital low-dropout/linear regulators. Various design aspects, including the extraction of the regulator state-space model and sliding coefficients by considering the hitting, existence, and stability conditions are described. Moreover, the freeze control block is introduced as a solution to compensate the high frequency chattering phenomenon of SM, resulting in reduction of switching losses. In order to verify the statements, a quasi digital low-dropout/linear regulator (QDLDO) is implemented in a discrete form on a PCB. The circuit consists of the proposed current-mode current feedback amplifier (CFA)-based SM controller and switchedmode PMOS array driven by a bidirectional serial shift register, which is controlled by the SM controller. The results reveal that the controller detects the load changes rapidly, and eliminates the output limit-cycle oscillation, providing a robust and stable output voltage.Peer ReviewedPostprint (author's final draft

    A self-powered single-chip wireless sensor platform

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    Internet of things” require a large array of low-cost sensor nodes, wireless connectivity, low power operation and system intelligence. On the other hand, wireless biomedical implants demand additional specifications including small form factor, a choice of wireless operating frequencies within the window for minimum tissue loss and bio-compatibility This thesis describes a low power and low-cost internet of things system suitable for implant applications that is implemented in its entirety on a single standard CMOS chip with an area smaller than 0.5 mm2. The chip includes integrated sensors, ultra-low-power transceivers, and additional interface and digital control electronics while it does not require a battery or complex packaging schemes. It is powered through electromagnetic (EM) radiation using its on-chip miniature antenna that also assists with transmit and receive functions. The chip can operate at a short distance (a few centimeters) from an EM source that also serves as its wireless link. Design methodology, system simulation and optimization and early measurement results are presented

    Digital Intensive Mixed Signal Circuits with In-situ Performance Monitors

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    University of Minnesota Ph.D. dissertation.November 2016. Major: Electrical/Computer Engineering. Advisor: Chris Kim. 1 computer file (PDF); x, 137 pages.Digital intensive circuit design techniques of different mixed-signal systems such as data converters, clock generators, voltage regulators etc. are gaining attention for the implementation of modern microprocessors and system-on-chips (SoCs) in order to fully utilize the benefits of CMOS technology scaling. Moreover different performance improvement schemes, for example, noise reduction, spur cancellation, linearity improvement etc. can be easily performed in digital domain. In addition to that, increasing speed and complexity of modern SoCs necessitate the requirement of in-situ measurement schemes, primarily for high volume testing. In-situ measurements not only obviate the need for expensive measurement equipments and probing techniques, but also reduce the test time significantly when a large number of chips are required to be tested. Several digital intensive circuit design techniques are proposed in this dissertation along with different in-situ performance monitors for a variety of mixed signal systems. First, a novel beat frequency quantization technique is proposed in a two-step VCO quantizer based ADC implementation for direct digital conversion of low amplitude bio- potential signals. By direct conversion, it alleviates the requirement of the area and power consuming analog-frontend (AFE) used in a conventional ADC designs. This prototype design is realized in a 65nm CMOS technology. Measured SNDR is 44.5dB from a 10mVpp, 300Hz signal and power consumption is only 38μW. Next, three different clock generation circuits, a phase-locked loop (PLL), a multiplying delay-locked loop (MDLL) and a frequency-locked loop (FLL) are presented. First a 0.4-to-1.6GHz sub-sampling fractional-N all digital PLL architecture is discussed that utilizes a D-flip-flop as a digital sub-sampler. Measurement results from a 65nm CMOS test-chip shows 5dB lower phase noise at 100KHz offset frequency, compared to a conventional architecture. The Digital PLL (DPLL) architecture is further extended for a digital MDLL implementation in order to suppress the VCO phase noise beyond the DPLL bandwidth. A zero-offset aperture phase detector (APD) and a digital- to-time converter (DTC) are employed for static phase-offset (SPO) cancellation. A unique in-situ detection circuitry achieves a high resolution SPO measurement in time domain. A 65nm test-chip shows 0.2-to-1.45GHz output frequency range while reducing the phase-noise by 9dB compared to a DPLL. Next, a frequency-to-current converter (FTC) based fractional FLL is proposed for a low accuracy clock generation in an extremely low area for IoT application. High density deep-trench capacitors are used for area reduction. The test-chip is fabricated in a 32nm SOI technology that takes only 0.0054mm2 active area. A high-resolution in-situ period jitter measurement block is also incorporated in this design. Finally, a time based digital low dropout (DLDO) regulator architecture is proposed for fine grain power delivery over a wide load current dynamic range and input/output voltage in order to facilitate dynamic voltage and frequency scaling (DVFS). High- resolution beat frequency detector dynamically adjusts the loop sampling frequency for ripple and settling time reduction due to load transients. A fixed steady-state voltage offset provides inherent active voltage positioning (AVP) for ripple reduction. Circuit simulations in a 65nm technology show more than 90% current efficiency for 100X load current variation, while it can operate for an input voltage range of 0.6V – 1.2V
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