A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

A 10-b Fourth-Order Quadrature Bandpass Continuous-Time ΣΔ Modulator With 33-MHz Bandwidth for a Dual-Channel GNSS Receiver

This document is the Accepted Manuscript version of the following article: Junfeng Zhang, Yang Xu, Zehong Zhang, Yichuang Sun, Zhihua Wang, and Baoyong Chi, ‘A 10-b Fourth-Order Quadrature Bandpass Continuous-Time ΣΔ Modulator With 33-MHz Bandwidth for a Dual-Channel GNSS Receiver’, IEEE Transactions on Microwave Theory and Practice, Vol. 65 (4): 1303-1314, first published online 16 February 2017. The version of record is available online at DOI: 10.1109/TMTT.2017.266237, Published by IEEE. © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.A fourth-order quadrature bandpass continuous-time sigma-delta modulator for a dual-channel global navigation satellite system (GNSS) receiver is presented. With a bandwidth (BW) of 33 MHz, the modulator is able to digitalize the downconverted GNSS signals in two adjacent signal bands simultaneously, realizing dual-channel GNSS reception with one receiver channel instead of two independent receiver channels. To maintain the loop-stability of the high-order architecture, any extra loop phase shifting should be minimized. In the system architecture, a feedback and feedforward hybrid architecture is used to implement the fourth-order loop-filter, and a return-to-zero (RZ) feedback after the discrete-time differential operation is introduced into the input of the final integrator to realize the excess loop delay compensation, saving a spare summing amplifier. In the circuit implementation, power-efficient amplifiers with high-frequency active feedforward and antipole-splitting techniques are employed in the active RC integrators, and self-calibrated comparators are used to implement the low-power 3-b quantizers. These power saving techniques help achieve superior figure of merit for the presented modulator. With a sampling rate of 460 MHz, current-steering digital-analog converters are chosen to guarantee high conversion speed. Implemented in only 180-nm CMOS, the modulator achieves 62.1-dB peak signal to noise and distortion ratio, 64-dB dynamic range, and 59.3-dB image rejection ratio, with a BW of 33 MHz, and consumes 54.4 mW from a 1.8 V power supply.Peer reviewe

A 5-Gb/s 66 dB CMOS variable-gain amplifier with reconfigurable DC-offset cancellation for multi-standard applications

This paper proposes a variable gain amplifier (VGA) with reconfigurable DC-offset cancellation (DCOC) for multi-standard applications. In this design, a cell-based design method and some bandwidth extension technologies are adopted to achieve a high data rate and a wide gain control range simultaneously. In addition, the DCOC having a tunable lower-cutoff frequency can make an optimum compromise between BER and SNR according to the specified baseband standard. The measurements show that the VGA achieves a gain control range from −6 dB to 60 dB, a bandwidth beyond 3 GHz, and a tunable lower-cutoff frequency from 0 to 300 kHz. When entering a 2 23 −1 pseudo-random bit sequence signal at 5 Gb/s, the VGA consumes 17 mW from a 1.2-V supply and the output data peak-to-peak jitter is less than 40 ps. The VGA is fabricated in a 90-nm CMOS process with a chip size (including all pads) of 0.52×0.5 mm 2

Analysis of Impact of Transformer Coupled Input Matching on Concurrent Dual-Band Low Noise Amplifier

Emerging advancements in telecommunication system need robust radio devices which can capable of working multiple frequency bands seamlessly. In any Radio Frequency (RF) receiver architecture, Low Noise Amplifier (LNA) is the mandatory front-end part in which takes place in between antenna and mixer. To support multiple frequency bands with single hardware, concurrent LNA is the more preferred topologies among others. As LNA is the very front end level of receiver, Input matching, Noise Figure (NF) and gain are the major performance parameters to be concerned. In this work, the impact of transformer coupled input matching on concurrent dual-band LNA is analyzed and verified. A concurrent LNA with concurrent matching without transformer coupling is used for comparison. A transformer coupled input matching is proposed for tunable concurrent dual-band LNA. All the circuits are implemented in UMC 180nm CMOS technology, and simulated using Cadence SpectreRF simulation tool

Reconfigurable Receiver Front-Ends for Advanced Telecommunication Technologies

The exponential growth of converging technologies, including augmented reality, autonomous vehicles, machine-to-machine and machine-to-human interactions, biomedical and environmental sensory systems, and artificial intelligence, is driving the need for robust infrastructural systems capable of handling vast data volumes between end users and service providers. This demand has prompted a significant evolution in wireless communication, with 5G and subsequent generations requiring exponentially improved spectral and energy efficiency compared to their predecessors. Achieving this entails intricate strategies such as advanced digital modulations, broader channel bandwidths, complex spectrum sharing, and carrier aggregation scenarios. A particularly challenging aspect arises in the form of non-contiguous aggregation of up to six carrier components across the frequency range 1 (FR1). This necessitates receiver front-ends to effectively reject out-of-band (OOB) interferences while maintaining high-performance in-band (IB) operation. Reconfigurability becomes pivotal in such dynamic environments, where frequency resource allocation, signal strength, and interference levels continuously change. Software-defined radios (SDRs) and cognitive radios (CRs) emerge as solutions, with direct RF-sampling receivers offering a suitable architecture in which the frequency translation is entirely performed in digital domain to avoid analog mixing issues. Moreover, direct RF- sampling receivers facilitate spectrum observation, which is crucial to identify free zones, and detect interferences. Acoustic and distributed filters offer impressive dynamic range and sharp roll off characteristics, but their bulkiness and lack of electronic adjustment capabilities limit their practicality. Active filters, on the other hand, present opportunities for integration in advanced CMOS technology, addressing size constraints and providing versatile programmability. However, concerns about power consumption, noise generation, and linearity in active filters require careful consideration.This thesis primarily focuses on the design and implementation of a low-voltage, low-power RFFE tailored for direct sampling receivers in 5G FR1 applications. The RFFE consists of a balun low-noise amplifier (LNA), a Q-enhanced filter, and a programmable gain amplifier (PGA). The balun-LNA employs noise cancellation, current reuse, and gm boosting for wideband gain and input impedance matching. Leveraging FD-SOI technology allows for programmable gain and linearity via body biasing. The LNA's operational state ranges between high-performance and high-tolerance modes, which are apt for sensitivityand blocking tests, respectively. The Q-enhanced filter adopts noise-cancelling, current-reuse, and programmable Gm-cells to realize a fourth-order response using two resonators. The fourth-order filter response is achieved by subtracting the individual response of these resonators. Compared to cascaded and magnetically coupled fourth-order filters, this technique maintains the large dynamic range of second-order resonators. Fabricated in 22-nm FD-SOI technology, the RFFE achieves 1%-40% fractional bandwidth (FBW) adjustability from 1.7 GHz to 6.4 GHz, 4.6 dB noise figure (NF) and an OOB third-order intermodulation intercept point (IIP3) of 22 dBm. Furthermore, concerning the implementation uncertainties and potential variations of temperature and supply voltage, design margins have been considered and a hybrid calibration scheme is introduced. A combination of on-chip and off-chip calibration based on noise response is employed to effectively adjust the quality factors, Gm-cells, and resonance frequencies, ensuring desired bandpass response. To optimize and accelerate the calibration process, a reinforcement learning (RL) agent is used.Anticipating future trends, the concept of the Q-enhanced filter extends to a multiple-mode filter for 6G upper mid-band applications. Covering the frequency range from 8 to 20 GHz, this RFFE can be configured as a fourth-order dual-band filter, two bandpass filters (BPFs) with an OOB notch, or a BPF with an IB notch. In cognitive radios, the filter’s transmission zeros can be positioned with respect to the carrier frequencies of interfering signals to yield over 50 dB blocker rejection

Harnessing optical micro-combs for microwave photonics

In the past decade, optical frequency combs generated by high-Q micro-resonators, or micro-combs, which feature compact device footprints, high energy efficiency, and high-repetition-rates in broad optical bandwidths, have led to a revolution in a wide range of fields including metrology, mode-locked lasers, telecommunications, RF photonics, spectroscopy, sensing, and quantum optics. Among these, an application that has attracted great interest is the use of micro-combs for RF photonics, where they offer enhanced functionalities as well as reduced size and power consumption over other approaches. This article reviews the recent advances in this emerging field. We provide an overview of the main achievements that have been obtained to date, and highlight the strong potential of micro-combs for RF photonics applications. We also discuss some of the open challenges and limitations that need to be met for practical applications.Comment: 32 Pages, 13 Figures, 172 Reference

An Energy-Efficient Reconfigurable Mobile Memory Interface for Computing Systems

The critical need for higher power efficiency and bandwidth transceiver design has significantly increased as mobile devices, such as smart phones, laptops, tablets, and ultra-portable personal digital assistants continue to be constructed using heterogeneous intellectual properties such as central processing units (CPUs), graphics processing units (GPUs), digital signal processors, dynamic random-access memories (DRAMs), sensors, and graphics/image processing units and to have enhanced graphic computing and video processing capabilities. However, the current mobile interface technologies which support CPU to memory communication (e.g. baseband-only signaling) have critical limitations, particularly super-linear energy consumption, limited bandwidth, and non-reconfigurable data access. As a consequence, there is a critical need to improve both energy efficiency and bandwidth for future mobile devices.;The primary goal of this study is to design an energy-efficient reconfigurable mobile memory interface for mobile computing systems in order to dramatically enhance the circuit and system bandwidth and power efficiency. The proposed energy efficient mobile memory interface which utilizes an advanced base-band (BB) signaling and a RF-band signaling is capable of simultaneous bi-directional communication and reconfigurable data access. It also increases power efficiency and bandwidth between mobile CPUs and memory subsystems on a single-ended shared transmission line. Moreover, due to multiple data communication on a single-ended shared transmission line, the number of transmission lines between mobile CPU and memories is considerably reduced, resulting in significant technological innovations, (e.g. more compact devices and low cost packaging to mobile communication interface) and establishing the principles and feasibility of technologies for future mobile system applications. The operation and performance of the proposed transceiver are analyzed and its circuit implementation is discussed in details. A chip prototype of the transceiver was implemented in a 65nm CMOS process technology. In the measurement, the transceiver exhibits higher aggregate data throughput and better energy efficiency compared to prior works

Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields