5,828 research outputs found

    Design of a tunable multi-band differential LC VCO using 0.35 mu m SiGe BiCMOS technology for multi-standard wireless communication systems

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    In this paper, an integrated 2.2-5.7GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mu m SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together in the same circuit, is a novel approach for wideband VCOs. Based on the post-layout simulation results, the VCO can be tuned using a DC voltage of 0 to 3.3 V for 5 different frequency bands (2.27-2.51 GHz, 2.48-2.78 GHz, 3.22-3.53 GHz, 3.48-3.91 GHz and 4.528-5.7 GHz) with a maximum bandwidth of 1.36 GHz and a minimum bandwidth of 300 MHz. The designed and simulated VCO can generate a differential output power between 0.992 and -6.087 dBm with an average power consumption of 44.21 mW including the buffers. The average second and third harmonics level were obtained as -37.21 and -47.6 dBm, respectively. The phase noise between -110.45 and -122.5 dBc/Hz, that was simulated at 1 MHz offset, can be obtained through the frequency of interest. Additionally, the figure of merit (FOM), that includes all important parameters such as the phase noise, the power consumption and the ratio of the operating frequency to the offset frequency, is between -176.48 and -181.16 and comparable or better than the ones with the other current VCOs. The main advantage of this study in comparison with the other VCOs, is covering 5 frequency bands starting from 2.27 up to 5.76 GHz without FOM and area abandonment. Output power of the fundamental frequency changes between -6.087 and 0.992 dBm, depending on the bias conditions (operating bands). Based on the post-layout simulation results, the core VCO circuit draws a current between 2.4-6.3 mA and between 11.4 and 15.3 mA with the buffer circuit from 3.3 V supply. The circuit occupies an area of 1.477 mm(2) on Si substrate, including DC, digital and RF pads

    Novel active function blocks and their applications in frequency filters and quadrature oscillators

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    Kmitočtové filtry a sinusoidní oscilátory jsou lineární elektronické obvody, které jsou používány v široké oblasti elektroniky a jsou základními stavebními bloky v analogovém zpracování signálu. V poslední dekádě pro tento účel bylo prezentováno velké množství stavebních funkčních bloků. V letech 2000 a 2006 na Ústavu telekomunikací, VUT v Brně byly definovány univerzální proudový konvejor (UCC) a univerzální napět'ový konvejor (UVC) a vyrobeny ve spolupráci s firmou AMI Semiconductor Czech, Ltd. Ovšem, stále existuje požadavek na vývoj nových aktivních prvků, které nabízejí nové výhody. Hlavní přínos práce proto spočívá v definici dalších původních aktivních stavebních bloků jako jsou differential-input buffered and transconductance amplifier (DBTA), current follower transconductance amplifier (CFTA), z-copy current-controlled current inverting transconductance amplifier (ZC-CCCITA), generalized current follower differential input transconductance amplifier (GCFDITA), voltage gain-controlled modified current-feedback operational amplifier (VGC-MCFOA), a minus-type current-controlled third-generation voltage conveyor (CC-VCIII-). Pomocí navržených aktivních stavebních bloků byly prezentovány původní zapojení fázovacích článků prvního řádu, univerzální filtry druhého řádu, ekvivalenty obvodu typu KHN, inverzní filtry, aktivní simulátory uzemněného induktoru a kvadraturní sinusoidní oscilátory pracující v proudovém, napět'ovém a smíšeném módu. Chování navržených obvodů byla ověřena simulací v prostředí SPICE a ve vybraných případech experimentálním měřením.Frequency filters and sinusoidal oscillators are linear electric circuits that are used in wide area of electronics and also are the basic building blocks in analogue signal processing. In the last decade, huge number of active building blocks (ABBs) were presented for this purpose. In 2000 and 2006, the universal current conveyor (UCC) and the universal voltage conveyor (UVC), respectively, were designed at the Department of Telecommunication, BUT, Brno, and produced in cooperation with AMI Semiconductor Czech, Ltd. There is still the need to develop new active elements that offer new advantages. The main contribution of this thesis is, therefore, the definition of other novel ABBs such as the differential-input buffered and transconductance amplifier (DBTA), the current follower transconductance amplifier (CFTA), the z-copy current-controlled current inverting transconductance amplifier (ZC-CCCITA), the generalized current follower differential input transconductance amplifier (GCFDITA), the voltage gain-controlled modified current-feedback operational amplifier (VGC-MCFOA), and the minus-type current-controlled third-generation voltage conveyor (CC-VCIII-). Using the proposed ABBs, novel structures of first-order all-pass filters, second-order universal filters, KHN-equivalent circuits, inverse filters, active grounded inductance simulators, and quadrature sinusoidal oscillators working in the current-, voltage-, or mixed-mode are presented. The behavior of the proposed circuits has been verified by SPICE simulations and in selected cases also by experimental measurements.

    Realization of Resistorless Lossless Positive and Negative Grounded Inductor Simulators Using Single ZC-CCCITA

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    This paper is in continuation with the very recent work of Prasad et al. [14], wherein new realizations of grounded and floating positive inductor simulator using current differencing transconductance amplifier (CDTA) are reported. The focus of the paper is to provide alternate realizations of lossless, both positive and negative inductor simulators (PIS and NIS) in grounded form using z-copy current-controlled current inverting transconductance amplifier (ZC-CCCITA), which can be considered as a derivative of CDTA, wherein the current differencing unit (CDU) is reduced to a current-controlled current inverting unit. We demonstrate that only a single ZC-CCCITA and one grounded capacitor are sufficient to realize grounded lossless PIS or NIS. The proposed circuits are resistorless whose parameters can be controlled through the bias currents. The workability of the proposed PIS is validated by SPICE simulations on three RLC prototypes

    A New Technique for the Design of Multi-Phase Voltage Controlled Oscillators

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    © 2017 World Scientific Publishing Company.In this work, a novel circuit structure for second-harmonic multi-phase voltage controlled oscillator (MVCO) is presented. The proposed MVCO is composed of (Formula presented.) ((Formula presented.) being an integer number and (Formula presented.)2) identical inductor–capacitor ((Formula presented.)) tank VCOs. In theory, this MVCO can provide 2(Formula presented.) different phase sinusoidal signals. A six-phase VCO based on the proposed structure is designed in a TSMC 0.18(Formula presented.)um CMOS process. Simulation results show that at the supply voltage of 0.8(Formula presented.)V, the total power consumption of the six-phase VCO circuit is about 1(Formula presented.)mW, the oscillation frequency is tunable from 2.3(Formula presented.)GHz to 2.5(Formula presented.)GHz when the control voltage varies from 0(Formula presented.)V to 0.8(Formula presented.)V, and the phase noise is lower than (Formula presented.)128(Formula presented.)dBc/Hz at 1(Formula presented.)MHz offset frequency. The proposed MVCO has lower phase noise, lower power consumption and more outputs than other related works in the literature.Peer reviewedFinal Accepted Versio

    Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications

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    In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is -110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm(2) on Si substrate, including DC and RF pads

    A Scalable 6-to-18 GHz Concurrent Dual-Band Quad-Beam Phased-Array Receiver in CMOS

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    This paper reports a 6-to-18 GHz integrated phased- array receiver implemented in 130-nm CMOS. The receiver is easily scalable to build a very large-scale phased-array system. It concurrently forms four independent beams at two different frequencies from 6 to 18 GHz. The nominal conversion gain of the receiver ranges from 16 to 24 dB over the entire band while the worst-case cross-band and cross-polarization rejections are achieved 48 dB and 63 dB, respectively. Phase shifting is performed in the LO path by a digital phase rotator with the worst-case RMS phase error and amplitude variation of 0.5° and 0.4 dB, respectively, over the entire band. A four-element phased-array receiver system is implemented based on four receiver chips. The measured array patterns agree well with the theoretical ones with a peak-to-null ratio of over 21.5 dB

    Silicon-based distributed voltage-controlled oscillators

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    Distributed voltage-controlled oscillators (DVCOs) are presented as a new approach to the design of silicon VCOs at microwave frequencies. In this paper, the operation of distributed oscillators is analyzed and the general oscillation condition is derived, resulting in analytical expressions for the frequency and amplitude. Two tuning techniques for DVCOs are demonstrated, namely, the inherent-varactor tuning and delay-balanced current-steering tuning. A complete analysis of the tuning techniques is presented. CMOS and bipolar DVCOs have been designed and fabricated in a 0.35-ÎĽm BiCMOS process. A 10-GHz CMOS DVCO achieves a tuning range of 12% (9.3-10.5 GHz) and a phase noise of -103 dBc/Hz at 600 kHz offset from the carrier. The oscillator provides an output power of -4.5 dBm without any buffering, drawing 14 mA of dc current from a 2.5-V power supply. A 12-GHz bipolar DVCO consuming 6 mA from a 2.5-V power supply is also demonstrated. It has a tuning range of 26% with a phase noise of -99 dBc/Hz at 600 kHz offset from the carrier
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