A 50 GHz SiGe BiCMOS active bandpass filter

Abstract: This paper presents a second-order active bandpass filter (BPF) at millimeter-wave frequency band using 0.13 μm SiGe BiCMOS technology. A complementary cross-coupled pair based negative resistance technique is applied to compensate for the resistive losses of microstrip line resonators. The proposed active BPF is simulated using the Keysight Technologies (formerly Agilent’s Electronic Measurement Group) Advanced Design System 2016.01. The center frequency (fc), 3-dB bandwidth, and fractional bandwidth of the simulated BPF are 53.85 GHz, 14.18 GHz, and 26.33%, respectively. The BPF shows an insertion loss (IL) of 0.33 dB and a return loss (RL) of 18.03 dB at fc. The minimum IL of 0.10 dB and best RL of 26.03 dB are observed in the passband. The noise figure and input 1-dB compression point (PldB) at fc are 7.93 dB and -3.67 dBm, respectively. The power dissipation is 2.62 mW at 1.6 V supply voltage. For the input power level of -10 dBm, the power level of the second harmonic is -46.02 dBc

Multi-Gigabit Wireless data transfer at 60 GHz

In this paper we describe the status of the first prototype of the 60 GHz wireless Multi-gigabit data transfer topology currently under development at University of Heidelberg using IBM 130 nm SiGe HBT BiCMOS technology. The 60 GHz band is very suitable for high data rate and short distance applications as for example needed in the HEP experments. The wireless transceiver consist of a transmitter and a receiver. The transmitter includes an On-Off Keying (OOK) modulator, an Local Oscillator (LO), a Power Amplifier (PA) and a BandPass Filter (BPF). The receiver part is composed of a BandPass- Filter (BPF), a Low Noise Amplifier (LNA), a double balanced down-convert Gilbert mixer, a Local Oscillator (LO), then a BPF to remove the mixer introduced noise, an Intermediate Amplifier (IF), an On-Off Keying demodulator and a limiting amplifier. The first prototype would be able to handle a data-rate of about 3.5 Gbps over a link distance of 1 m. The first simulations of the LNA show that a Noise Figure (NF) of 5 dB, a power gain of 21 dB at 60 GHz with a 3 dB bandwidth of more than 20 GHz with a power consumption 11 mW are achieved. Simulations of the PA show an output referred compression point P1dB of 19.7 dB at 60 GHz.Comment: Proceedings of the WIT201

Millimeter-wave passive bandpass filters

Abstract: This paper presents a comprehensive review of millimeter-wave (mm-wave) passive bandpass filters (BPFs). A detailed discussion is provided on different topologies and architectures, performance comparison, design challenges, and process technologies. Passive BPFs offer the advantages of high operating frequency, good linearity, low noise figure (NF), and no power dissipation. Careful consideration of available process technologies is required for the implementation of high performance mm-wave circuits. Gallium arsenide (GaAs) and indium phosphide (InP) (group III-V) processes provide high cutoff frequencies (fT), good noise performance, and high quality on-chip passives. Complementary metal oxide semiconductor (CMOS) process has the prominent advantages of low cost, a high degree of integration, and high reliability, while silicon germanium bipolar CMOS (SiGe BiCMOS) process demonstrates high fT, a high level of integration, and better noise and power performance

Miniaturized Resonator and Bandpass Filter for Silicon-Based Monolithic Microwave and Millimeter-Wave Integrated Circuits

© 2018 IEEE. © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.This paper introduces a unique approach for the implementation of a miniaturized on-chip resonator and its application for the first-order bandpass filter (BPF) design. This approach utilizes a combination of a broadside-coupling technique and a split-ring structure. To fully understand the principle behind it, simplified LC equivalent-circuit models are provided. By analyzing these models, guidelines for implementation of an ultra-compact resonator and a BPF are given. To further demonstrate the feasibility of using this approach in practice, both the implemented resonator and the filter are fabricated in a standard 0.13-μm (Bi)-CMOS technology. The measured results show that the resonator can generate a resonance at 66.75 GHz, while the BPF has a center frequency at 40 GHz and an insertion loss of 1.7 dB. The chip size of both the resonator and the BPF, excluding the pads, is only 0.012mm 2 (0.08 × 0.144 mm 2).Peer reviewe

E-band active Q-enhanced pseudo-combline resonator in 130nm SiGe BiCMOS

We present an active Q-enhanced pseudo-combline resonator integrated in 130 nm SiGe BiCMOS. It is shown that the resonator Q0 can be enhanced, controllably, from 15 to 1578 at 78.8 GHz through application of a SiGe HBT-based negative resistance circuit. This is the first time that resonator Q-enhancement is demonstrated experimentally in silicon above 40 GHz, and the first time negative enhancement with single-ended pseudo-combline loading is used.The National Research Foundation under grant UID 93921, as well as the Eskom Tertiary Education Support Programme (TESP) and the UNESCO Participation Programme.https://link.springer.com/journal/107622019-10-01hj2018Electrical, Electronic and Computer Engineerin

Dual-Band Transmitter and Receiver with Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz

This paper presents a transmitter (TX) and a receiver (RX) with bowtie-antenna and silicon lens for gas spectroscopy at 222-270 GHz, which are fabricated in IHP’s 0.13 μm SiGe BiCMOS technology. The TX and RX use two integrated local oscillators for 222 – 256 GHz and 250 – 270 GHz, which are switched for dual-band operation. Due to its directivity of about 27 dBi, the single integrated bowtie-antenna with silicon lens enables an EIRP of about 25 dBm for the TX, and therefore a considerably higher EIRP for the 2-band TX compared to previously reported systems. The double sideband noise temperature of the RX is 20,000 K (18.5 dB noise figure) as measured by the Y-factor method. Absorption spectroscopy of gaseous methanol is used as a measure for the performance of the gas spectroscopy system with TX- and RX-modules

Millimeter-Wave Concurrent Dual-Band BiCMOS RFICs for Radar and Communication RF Front-End

The recent advancement in silicon-based technologies has offered the opportunity for the development of highly-integrated circuits and systems in the millimeter-wave frequency regime. In particular, the demand for high performance multi-band multi-mode radar and communication systems built on silicon-based technologies has been increased dramatically for both military and commercial applications. This dissertation presents the design and implementation of advanced millimeter-wave front-end circuits in SiGe BiCMOS process including a transmit/receive switch module with integrated calibration function, low noise amplifier, and power amplifier for millimeter-wave concurrent dual-band dual-polarization radars and communication systems. The proposed circuits designed for the concurrent dual-band dual-polarization radars and communication systems were fabricated using 0.18-μm BiCMOS process resulting in novel circuit architectures for concurrent multi-band operation. The developed concurrent dual-band circuits fabricated on 0.18-μm BiCMOS process include the T/R/Calibration switch module for digital beam forming array system at 24.5/35 GHz, concurrent dual-band low noise amplifiers at 44/60 GHz, and concurrent dual-band power amplifier at 44/60 GHz. With having all the design frequencies closely spaced to each other showing the frequency ratio below 1.43, the designed circuits provided the integrated dual-band filtering function with Q-enhanced frequency responses. Inspired by the composite right/left- handed metamaterial transmission line approaches, the integrated Q-enhanced filtering sub-circuits provided unprecedented dual-band filtering capability. The new concurrent dual-band dual-mode circuits and system architecture can provide enhanced radar and communication system performance with extended coverage, better image synthesis and target locating by the enhanced diversity. The circuit level hardware research conducted in this dissertation is expected to contribute to enhance the performance of multi-band multi-mode imaging, sensing, and communication array systems