Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications

In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is -110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm(2) on Si substrate, including DC and RF pads

Design And Implementation Of Up-Conversion Mixer And Lc-Quadrature Oscillator For IEEE 802.11a WLAN Transmitter Application Utilizing 0.18 Pm CMOS Technology [TK7871.99.M44 H279 2008 f rb].

Perlumbaan implementasi litar terkamil radio, dengan kos yang rendah telah menggalakkan penggunaan teknologi CMOS. The drive for cost reduction has led to the use of CMOS technology for highly integrated radios

Energy-Efficient Wireless Circuits and Systems for Internet of Things

As the demand of ultra-low power (ULP) systems for internet of thing (IoT) applications has been increasing, large efforts on evolving a new computing class is actively ongoing. The evolution of the new computing class, however, faced challenges due to hard constraints on the RF systems. Significant efforts on reducing power of power-hungry wireless radios have been done. The ULP radios, however, are mostly not standard compliant which poses a challenge to wide spread adoption. Being compliant with the WiFi network protocol can maximize an ULP radio’s potential of utilization, however, this standard demands excessive power consumption of over 10mW, that is hardly compatible with in ULP systems even with heavy duty-cycling. Also, lots of efforts to minimize off-chip components in ULP IoT device have been done, however, still not enough for practical usage without a clean external reference, therefore, this limits scaling on cost and form-factor of the new computer class of IoT applications. This research is motivated by those challenges on the RF systems, and each work focuses on radio designs for IoT applications in various aspects. First, the research covers several endeavors for relieving energy constraints on RF systems by utilizing existing network protocols that eventually meets both low-active power, and widespread adoption. This includes novel approaches on 802.11 communication with articulate iterations on low-power RF systems. The research presents three prototypes as power-efficient WiFi wake-up receivers, which bridges the gap between industry standard radios and ULP IoT radios. The proposed WiFi wake-up receivers operate with low power consumption and remain compatible with the WiFi protocol by using back-channel communication. Back-channel communication embeds a signal into a WiFi compliant transmission changing the firmware in the access point, or more specifically just the data in the payload of the WiFi packet. With a specific sequence of data in the packet, the transmitter can output a signal that mimics a modulation that is more conducive for ULP receivers, such as OOK and FSK. In this work, low power mixer-first receivers, and the first fully integrated ultra-low voltage receiver are presented, that are compatible with WiFi through back-channel communication. Another main contribution of this work is in relieving the integration challenge of IoT devices by removing the need for external, or off-chip crystals and antennas. This enables a small form-factor on the order of mm3-scale, useful for medical research and ubiquitous sensing applications. A crystal-less small form factor fully integrated 60GHz transceiver with on-chip 12-channel frequency reference, and good peak gain dual-mode on-chip antenna is presented.PHDElectrical and Computer EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/162975/1/jaeim_1.pd

Design and implementation of frequency synthesizers for 3-10 ghz mulitband ofdm uwb communication

The allocation of frequency spectrum by the FCC for Ultra Wideband (UWB) communications in the 3.1-10.6 GHz has paved the path for very high data rate Gb/s wireless communications. Frequency synthesis in these communication systems involves great challenges such as high frequency and wideband operation in addition to stringent requirements on frequency hopping time and coexistence with other wireless standards. This research proposes frequency generation schemes for such radio systems and their integrated implementations in silicon based technologies. Special emphasis is placed on efficient frequency planning and other system level considerations for building compact and practical systems for carrier frequency generation in an integrated UWB radio. This work proposes a frequency band plan for multiband OFDM based UWB radios in the 3.1-10.6 GHz range. Based on this frequency plan, two 11-band frequency synthesizers are designed, implemented and tested making them one of the first frequency synthesizers for UWB covering 78% of the licensed spectrum. The circuits are implemented in 0.25µm SiGe BiCMOS and the architectures are based on a single VCO at a fixed frequency followed by an array of dividers, multiplexers and single sideband (SSB) mixers to generate the 11 required bands in quadrature with fast hopping in much less than 9.5 ns. One of the synthesizers is integrated and tested as part of a 3-10 GHz packaged receiver. It draws 80 mA current from a 2.5 V supply and occupies an area of 2.25 mm2. Finally, an architecture for a UWB synthesizer is proposed that is based on a single multiband quadrature VCO, a programmable integer divider with 50% duty cycle and a single sideband mixer. A frequency band plan is proposed that greatly relaxes the tuning range requirement of the multiband VCO and leads to a very digitally intensive architecture for wideband frequency synthesis suitable for implementation in deep submicron CMOS processes. A design in 130nm CMOS occupies less than 1 mm2 while consuming 90 mW. This architecture provides an efficient solution in terms of area and power consumption with very low complexity

24GHz CMOS direct downconversion receiver front-end and VCO design

Because of advancements in RF CMOS circuits, devices, and passive elements in the last decade, it has become possible to develop a RF system-on-chip (SoC) that integrates RF, analog and digital circuits completely. Direct downconversion, or zero-IF downconversion architecture, shows an advantage over traditional superheterodyne architectures, because it eliminates the image rejection filter and IF filter, and employs only one local oscillator (LO), which reduces the receiver size and power dissipation significantly. For this reason, direct downconversion has drawn more and more attention recently in various wireless applications. However, it also presents some design challenges like flicker noise, DC offsets, even-order distortion, and I/Q mismatches. In this work, a thorough noise analysis and a comprehensive study of the noise mechanism of the low noise amplifier of CMOS direct downconversion receivers (DCR) is given. Also addressed is the design of a cross-coupled LC voltage-controlled oscillator (VCO). For the low noise amplifier, which presents major noise contribution to the DCR front-end, an optimization technique which employs both a parallel capacitance and an inter-stage inductor is proposed. The addition of this capacitance helps keep the active device relatively small, and the analysis on the effects of the inter-stage inductor shows that it helps boost gain of the LNA at the desired operation frequency of 2.4GHz, and offers a lower noise figure. In order to achieve direct downconversion, both a passive switching mixer and an active double-balanced mixer are presented. The passive switching mixer helps solve the problem of flicker noise, but suffers power loss, while the double-balanced architecture helps relieve the problems of DC offset and second-order distortion. The last part of this presentation is about a partially tunable CMOS LC-VCO which achieves good phase noise performance at the cost of smaller tuning range. It uses on-chip spiral inductors and junction varactors in the resonant LC-tank. The presented building blocks can be used for a low-power, low-voltage DCR front-end for 802.11b/g applications. It is concluded that direct downconversion architecture can find its use in low-power, low-cost 802.11b and Bluetooth applications should the circuit design make use of the optimization techniques addressed in this work

Design and implementation of frequency synthesizers for 3-10 ghz mulitband ofdm uwb communication

The allocation of frequency spectrum by the FCC for Ultra Wideband (UWB) communications in the 3.1-10.6 GHz has paved the path for very high data rate Gb/s wireless communications. Frequency synthesis in these communication systems involves great challenges such as high frequency and wideband operation in addition to stringent requirements on frequency hopping time and coexistence with other wireless standards. This research proposes frequency generation schemes for such radio systems and their integrated implementations in silicon based technologies. Special emphasis is placed on efficient frequency planning and other system level considerations for building compact and practical systems for carrier frequency generation in an integrated UWB radio. This work proposes a frequency band plan for multiband OFDM based UWB radios in the 3.1-10.6 GHz range. Based on this frequency plan, two 11-band frequency synthesizers are designed, implemented and tested making them one of the first frequency synthesizers for UWB covering 78% of the licensed spectrum. The circuits are implemented in 0.25µm SiGe BiCMOS and the architectures are based on a single VCO at a fixed frequency followed by an array of dividers, multiplexers and single sideband (SSB) mixers to generate the 11 required bands in quadrature with fast hopping in much less than 9.5 ns. One of the synthesizers is integrated and tested as part of a 3-10 GHz packaged receiver. It draws 80 mA current from a 2.5 V supply and occupies an area of 2.25 mm2. Finally, an architecture for a UWB synthesizer is proposed that is based on a single multiband quadrature VCO, a programmable integer divider with 50% duty cycle and a single sideband mixer. A frequency band plan is proposed that greatly relaxes the tuning range requirement of the multiband VCO and leads to a very digitally intensive architecture for wideband frequency synthesis suitable for implementation in deep submicron CMOS processes. A design in 130nm CMOS occupies less than 1 mm2 while consuming 90 mW. This architecture provides an efficient solution in terms of area and power consumption with very low complexity

Realization of a voltage controlled oscillator using 0.35 um sige-bicmos technology for multi-band applications

The stable growth in wireless communications market has engendered the interoperability of various standards in a single broadband frequency range from hundred MHz up to several GHz. This frequency range consists of various wireless applications such as GSM, Bluetooth and WLAN. Therefore, an agile wireless system needs smart RF front-ends for functioning properly in such a crowded spectrum. As a result, the demand for multi-standard RF transceivers which put various wireless and cordless phone standards together in one structure was increased. The demand for multi-standard RF transceivers gives a key role to reconfigurable wideband VCO operation with low-power and low-phase noise characteristics. Besides agility and intelligence, such a communication system (GSM, WLAN, Global Positioning Systems, etc. ) required meeting the requirements of several standards in a cost-effective way. This, when cost and integration are the major concerns, leads to the exploitation of Si-based technologies. In this thesis, an integrated 2.2-5.7GHz Multi-band differential LC VCO for Multi-standard Wireless Communication systems was designed utilizing 0.35μm SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together in the same circuit, is a novel approach for wideband VCOs. Based on the post layout simulation results, the VCO can be tuned using a DC voltage of 0 to 3.3V for 5 different frequency bands (2.27-2.51 GHz, 2.48-2.78GHz, 3.22-3.53GHz, 3.48-3.91GHz and 4.528-5.7GHz) with a maximum bandwidth of 1.36GHz and a minimum bandwidth of 300MHz. The designed and simulated VCO can generate a differential output power between 0.992 dBm and -6.087 dBm with an average power consumption of 44.21mW including the buffers. The average second and third harmonics level were obtained as -37.21 dBm and -47.6 dBm, respectively. The phase noise between -110.45 and -122.5 dBc/Hz, that was simulated at 1 MHz offset, can be obtained through the frequency of interest. Additionally, the figure of merit (FOM), that includes all important parameters such as the phase noise, the power consumption and the ratio of the operating frequency to the offset frequency, is between -176.48 and -181.16 and comparable or better than the ones with the other current VCOs. The main advantage of this study in comparison with the other VCOs, is covering 5 frequency bands starting from 2.27 up to 5.76 GHz without FOM and area abandonment

System-level design and RF front-end implementation for a 3-10ghz multiband-ofdm ultrawideband receiver and built-in testing techniques for analog and rf integrated circuits

This work consists of two main parts: a) Design of a 3-10GHz UltraWideBand (UWB) Receiver and b) Built-In Testing Techniques (BIT) for Analog and RF circuits. The MultiBand OFDM (MB-OFDM) proposal for UWB communications has received significant attention for the implementation of very high data rate (up to 480Mb/s) wireless devices. A wideband LNA with a tunable notch filter, a downconversion quadrature mixer, and the overall radio system-level design are proposed for an 11-band 3.4-10.3GHz direct conversion receiver for MB-OFDM UWB implemented in a 0.25mm BiCMOS process. The packaged IC includes an RF front-end with interference rejection at 5.25GHz, a frequency synthesizer generating 11 carrier tones in quadrature with fast hopping, and a linear phase baseband section with 42dB of gain programmability. The receiver IC mounted on a FR-4 substrate provides a maximum gain of 67-78dB and NF of 5-10dB across all bands while consuming 114mA from a 2.5V supply. Two BIT techniques for analog and RF circuits are developed. The goal is to reduce the test cost by reducing the use of analog instrumentation. An integrated frequency response characterization system with a digital interface is proposed to test the magnitude and phase responses at different nodes of an analog circuit. A complete prototype in CMOS 0.35mm technology employs only 0.3mm2 of area. Its operation is demonstrated by performing frequency response measurements in a range of 1 to 130MHz on 2 analog filters integrated on the same chip. A very compact CMOS RF RMS Detector and a methodology for its use in the built-in measurement of the gain and 1dB compression point of RF circuits are proposed to address the problem of on-chip testing at RF frequencies. The proposed device generates a DC voltage proportional to the RMS voltage amplitude of an RF signal. A design in CMOS 0.35mm technology presents and input capacitance <15fF and occupies and area of 0.03mm2. The application of these two techniques in combination with a loop-back test architecture significantly enhances the testability of a wireless transceiver system

Survey on individual components for a 5 GHz receiver system using 130 nm CMOS technology

La intención de esta tesis es recopilar información desde un punto de vista general sobre los diferentes tipos de componentes utilizados en un receptor de señales a 5 GHz utilizando tecnología CMOS. Se ha realizado una descripción y análisis de cada uno de los componentes que forman el sistema, destacando diferentes tipos de configuraciones, figuras de mérito y otros parámetros. Se muestra una tabla resumen al final de cada sección, comparando algunos diseños que se han ido presentando a lo largo de los años en conferencias internacionales de la IEEE.The intention of this thesis is to gather information from an overview point about the different types of components used in a 5 GHz receiver using CMOS technology. A review of each of the components that form the system has been made, highlighting different types of configurations, figure of merits and parameters. A summary table is shown at the end of each section, comparing many designs that have been presented over the years at international conferences of the IEEE.Departamento de Ingeniería Energética y FluidomecánicaGrado en Ingeniería en Electrónica Industrial y Automátic

The BLIXER, a Wideband Balun-LNA-I/Q-Mixer Topology

This paper proposes to merge an I/Q current-commutating mixer with a noise-canceling balun-LNA. To realize a high bandwidth, the real part of the impedance of all RF nodes is kept low, and the voltage gain is not created at RF but in baseband where capacitive loading is no problem. Thus a high RF bandwidth is achieved without using inductors for bandwidth extension. By using an I/Q mixer with 25% duty-cycle LO waveform the output IF currents have also 25% duty-cycle, causing 2 times smaller DC-voltage drop after IF filtering. This allows for a 2 times increase in the impedance level of the IF filter, rendering more voltage gain for the same supply headroom. The implemented balun-LNA-I/Q-mixer topology achieves > 18 dB conversion gain, a flat noise figure < 5.5 dB from 500 MHz to 7 GHz, IIP2 = +20 dBm and IIP3 = -3 dBm. The core circuit consumes only 16 mW from a 1.2 V supply voltage and occupies less than 0.01 mm2 in 65 nm CMOS