Photonic integration enabling new multiplexing concepts in optical board-to-board and rack-to-rack interconnects

New broadband applications are causing the datacenters to proliferate, raising the bar for higher interconnection speeds. So far, optical board-to-board and rack-to-rack interconnects relied primarily on low-cost commodity optical components assembled in a single package. Although this concept proved successful in the first generations of optical-interconnect modules, scalability is a daunting issue as signaling rates extend beyond 25 Gb/s. In this paper we present our work towards the development of two technology platforms for migration beyond Infiniband enhanced data rate (EDR), introducing new concepts in board-to-board and rack-to-rack interconnects. The first platform is developed in the framework of MIRAGE European project and relies on proven VCSEL technology, exploiting the inherent cost, yield, reliability and power consumption advantages of VCSELs. Wavelength multiplexing, PAM-4 modulation and multi-core fiber (MCF) multiplexing are introduced by combining VCSELs with integrated Si and glass photonics as well as BiCMOS electronics. An in-plane MCF-to-SOI interface is demonstrated, allowing coupling from the MCF cores to 340x400 nm Si waveguides. Development of a low-power VCSEL driver with integrated feed-forward equalizer is reported, allowing PAM-4 modulation of a bandwidth-limited VCSEL beyond 25 Gbaud. The second platform, developed within the frames of the European project PHOXTROT, considers the use of modulation formats of increased complexity in the context of optical interconnects. Powered by the evolution of DSP technology and towards an integration path between inter and intra datacenter traffic, this platform investigates optical interconnection system concepts capable to support 16QAM 40GBd data traffic, exploiting the advancements of silicon and polymer technologies

차세대 자동차용 카메라 데이터 통신을 위한 비대칭 동시 양방향 송수신기의 설계

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022.2. 정덕균.본 학위 논문에서는 차세대 자동차용 카메라 링크를 위해 높은 속도의 4레벨 펄스 진폭 변조 신호와 낮은 속도의 2레벨 펄스 진폭 변조 신호를 통신하는 비대칭 동시 양방향 송수신기의 설계 기술에 대해 제안하고 검증되었다. 첫번째 프로토타입 설계에서는, 10B6Q 직류 밸런스 코드를 탑재한 4레벨 펄스 진폭 변조 송신기와 고정된 데이터와 참조 레벨을 가지는 4레벨 펄스 진폭 변조 적응형 수신기에 대한 내용이 기술되었다. 4레벨 펄스 진폭 변조 송신기에서는 교류 연결 링크 시스템에 대응하기 위한 면적 및 전력 효율성이 좋은 10B6Q 코드가 제안되었다. 이 코드는 직류 밸런스를 맞추고 연속적으로 같은 심볼을 가지는 길이를 6개로 제한 시킨다. 비록 여기서는 입력 데이터 길이 10비트를 사용하였지만, 제안된 기술은 카메라의 다양한 데이터 타입에 대응할 수 있도록 입력 데이터 길이에 대한 확장성을 가진다. 반면, 4레벨 펄스 진폭 변조 적응형 수신기에서는, 샘플러의 옵셋을 최적으로 제거하여 더 낮은 비트에러율을 얻기 위해서, 기존의 데이터 및 참조 레벨을 조절하는 대신, 이 레벨들은 고정시키고 가변 게인 증폭기를 적응형으로 조절하도록 하였다. 상기 10B6Q 코드 및 고정 데이터 및 참조레벨 기술을 가진 프로토타입 칩들은 40 나노미터 상호보완형 메탈 산화 반도체 공정으로 제작되었고 칩 온 보드 형태로 평가되었다. 10B6Q 코드는 합성 게이트 숫자는 645개와 함께 단 0.0009 mm2 의 면적 만을 차지한다. 또한, 667 MHz 동작 주파수에서 단 0.23 mW 의 전력을 소모한다. 10B6Q 코드를 탑재한 송신기에서 8-Gb/s 4레벨 펄스 진폭 변조 신호를 고정 데이터 및 참조 레벨을 가지는 적응형 수신기로 12-m 케이블 (22-dB 채널 로스) 을 통해서 보낸 결과 최소 비트 에러율 108 을 달성하였고, 비트 에러율 105 에서는 아이 마진이 0.15 UI x 50 mV 보다 크게 측정되었다. 송수신기를 합친 전력 소모는 65.2 mW (PLL 제외) 이고, 성과의 대표수치는 0.37 pJ/b/dB 를 보여주었다. 첫번째 프로토타입 설계을 포함하여 개선된 두번째 프로토타입 설계에서는, 12-Gb/s 4레벨 펄스 진폭 변조 정방향 채널 신호와 125-Mb/s 2레벨 펄스 진폭 변조 역방향 채널 신호를 탑재한 비대칭 동시 양방향 송수신기에 대해 기술되고 검증되었다. 제안된 넓은 선형 범위를 가지는 하이브리드는 gmC 저대역 통과 필터와 에코 제거기와 함께 아웃바운드 신호를 24 dB 이상 효율적으로 감소시켰다. 또한, 넓은 선형 범위를 가지는 하이브리드와 함께 게인 감소기를 형성하게 되는 선형 범위 증폭기를 통해 4레벨 펄스 진폭 변조 신호의 선형성과 진폭의 트레이드 오프 관계를 깨는 것이 가능하였다. 동시 양방향 송수신기 칩은 40 나노미터 상호보완형 메탈 산화 반도체 공정으로 제작되었다. 상기 설계 기술들을 이용하여, 4레벨 펄스 진폭 변조 및 2레벨 펄스 진폭 변조 송수신기 모두 5m 채널 (채널 로스 15.9 dB) 에서 1E-12 보다 낮은 비트 에러율을 달성하였고, 총 78.4 mW 의 전력 소모를 기록하였다. 종합적인 송수신기는 성과 대표지표로 0.41 pJ/b/dB 와 함께 동시 양방향 통신 아래에서 4레벨 펄스 진폭 변조 신호 및 2레벨 펄스 진폭 변조 신호 각각에서 아이 마진 0.15 UI 와 0.57 UI 를 달성하였다. 이 수치는 성과 대표지표 0.5 이하를 가지는 기존 동시 양방향 송수신기와의 비교에서 최고의 아이 마진을 기록하였다.In this dissertation, design techniques of a highly asymmetric simultaneous bidirectional (SB) transceivers with high-speed PAM-4 and low-speed PAM-2 signals are proposed and demonstrated for the next-generation automotive camera link. In a first prototype design, a PAM-4 transmitter with 10B6Q DC balance code and a PAM-4 adaptive receiver with fixed data and threshold levels (dtLevs) are presented. In PAM-4 transmitter, an area- and power-efficient 10B6Q code for an AC coupled link system that guarantees DC balance and limited run length of six is proposed. Although the input data width of 10 bits is used here, the proposed scheme has an extensibility for the input data width to cover various data types of the camera. On the other hand, in the PAM-4 adaptive receiver, to optimally cancel the sampler offset for a lower BER, instead of adjusting dtLevs, the gain of a programmable gain amplifier is adjusted adaptively under fixed dtLevs. The prototype chips including above proposed 10B6Q code and fixed dtLevs are fabricated in 40-nm CMOS technology and tested in chip-on-board assembly. The 10B6Q code only occupies an active area of 0.0009 mm2 with a synthesized gate count of 645. It also consumes 0.23 mW at the operating clock frequency of 667 MHz. The transmitter with 10B6Q code delivers 8-Gb/s PAM-4 signal to the adaptive receiver using fixed dtLevs through a lossy 12-m cable (22-dB channel loss) with a BER of 1E-8, and the eye margin larger than 0.15 UI x 50 mV is measured for a BER of 1E-5. The proto-type chips consume 65.2 mW (excluding PLL), exhibiting an FoM of 0.37 pJ/b/dB. In a second prototype design advanced from the first prototypes, An asymmetric SB transceivers incorporating a 12-Gb/s PAM-4 forward channel and a 125-Mb/s PAM-2 back channel are presented and demonstrated. The proposed wide linear range (WLR) hybrid combined with a gmC low-pass filter and an echo canceller effectively suppresses the outbound signals by more than 24dB. In addition, linear range enhancer which forms a gain attenuator with WLR hybrid breaks the trade-off between the linearity and the amplitude of the PAM-4 signal. The SB transceiver chips are separately fabricated in 40-nm CMOS technology. Using above design techniques, both PAM-4 and PAM-2 SB transceivers achieve BER less than 1E-12 over a 5-m channel (15.9 dB channel loss), consuming 78.4 mW. The overall transceivers achieve an FoM of 0.41 pJ/b/dB and eye margin (at BER of 1E-12) of 0.15 UI and 0.57 UI for the forward PAM-4 and back PAM-2 signals, respectively, under SB communication. This is the best eye margin compared to the prior art SB transceivers with an FoM less than 0.5.CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 DISSERTATION ORGANIZATION 4 CHAPTER 2 BACKGROUND ON AUTOMOTIVE CAMERA LINK 6 2.1 OVERVIEW 6 2.2 SYSTEM REQUIREMENTS 10 2.2.1 CHANNEL 10 2.2.2 POWER OVER DIFFERENTIAL LINE (PODL) 12 2.2.3 AC COUPLING AND DC BALANCE CODE 15 2.2.4 SIMULTANEOUS BIDIRECTIONAL COMMUNICATION 18 2.2.4.1 HYBRID 18 2.2.4.2 ECHO CANCELLER 20 2.2.5 ADAPTIVE RECEIVE EQUALIZATION 22 CHAPTER 3 AREA AND POWER EFFICIENT 10B6Q ENCODER FOR DC BALANCE 25 3.1 INTRODUCTION 25 3.2 PRIOR WORKS 28 3.3 PROPOSED AREA- AND POWER-EFFICIENT 10B6Q PAM-4 CODER 30 3.4 DESIGN OF THE 10B6Q CODE 33 3.4.1 PAM-4 DC BALANCE 35 3.4.2 PAM-4 TRANSITION DENSITY 35 3.4.3 10B6Q DECODER 37 3.5 IMPLEMENTATION AND MEASUREMENT RESULTS 40 CHAPTER 4 PAM-4 TRANSMITTER AND ADAPTIVE RECEIVER WITH FIXED DATA AND THRESHOLD LEVELS 45 4.1 INTRODUCTION 45 4.2 PRIOR WORKS 47 4.3 ARCHITECTURE AND IMPLEMENTATION 49 4.2.1 PAM-4 TRANSMITTER 49 4.2.2 PAM-4 ADAPTIVE RECEIVER 52 4.3 MEASUREMENT RESULTS 62 CHAPTER 5 ASYMMETRIC SIMULTANEOUS BIDIRECTIONAL TRANSCEIVERS USING WIDE LINEAR RANGE HYBRID 68 5.1 INTRODUCTION 68 5.2 PRIOR WORKS 70 5.3 WIDE LINEAR RANGE (WLR) HYBRID 75 5.3 IMPLEMENTATION 78 5.3.1 SERIALIZER (SER) DESIGN 78 5.3.2 DESERIALIZER (DES) DESIGN 79 5.4 HALF CIRCUIT ANALYSIS OF WLR HYBRID AND LRE 82 5.5 MEASUREMENT RESULTS 88 CHAPTER 6 CONCLUSION 97 BIBLIOGRAPHY 99 초 록 106박

A 160Gb/s (4x40) WDM O-band Tx subassembly using a 4-ch array of silicon rings co-packaged with a SiGe BiCMOS IC driver

We present a 400 (8×50) Gb/s-capable RM-based Si-photonic WDM O-band TxRx with 1.17nm channel spacing for high-speed optical interconnects and demonstrate successful 50Gb/s-NRZ TxRx operation achieving a ~4.5dB Tx extinction ratio under 2.15Vpp drive

Integrated Circuit Design for Hybrid Optoelectronic Interconnects

This dissertation focuses on high-speed circuit design for the integration of hybrid optoelectronic interconnects. It bridges the gap between electronic circuit design and optical device design by seamlessly incorporating the compact Verilog-A model for optical components into the SPICE-like simulation environment, such as the Cadence design tool. Optical components fabricated in the IME 130nm SOI CMOS process are characterized. Corresponding compact Verilog-A models for Mach-Zehnder modulator (MZM) device are developed. With this approach, electro-optical co-design and hybrid simulation are made possible. The developed optical models are used for analyzing the system-level specifications of an MZM based optoelectronic transceiver link. Link power budgets for NRZ, PAM-4 and PAM-8 signaling modulations are simulated at system-level. The optimal transmitter extinction ratio (ER) is derived based on the required receiver\u27s minimum optical modulation amplitude (OMA). A limiting receiver is fabricated in the IBM 130 nm CMOS process. By side- by-side wire-bonding to a commercial high-speed InGaAs/InP PIN photodiode, we demonstrate that the hybrid optoelectronic limiting receiver can achieve the bit error rate (BER) of 10-12 with a -6.7 dBm sensitivity at 4 Gb/s. A full-rate, 4-channel 29-1 length parallel PRBS is fabricated in the IBM 130 nm SiGe BiCMOS process. Together with a 10 GHz phase locked loop (PLL) designed from system architecture to transistor level design, the PRBS is demonstrated operating at more than 10 Gb/s. Lessons learned from high-speed PCB design, dealing with signal integrity issue regarding to the PCB transmission line are summarized

Silicon photonic modulators for PAM transmissions

High-speed optical interconnects are crucial for both data centers and high performance computing systems. High power consumption and limited device bandwidth have hindered the move to higher optical transmission speeds. Integrated optical transceivers in silicon photonics (SiP) using pulse-amplitude modulation (PAM) are a promising solution to increase data rates. In this paper, we review recent progress in SiP for PAM transmissions. We focus on materials and technologies available CMOS-compatible photonics processes. Performance metrics of SiP modulators and crucial considerations for high-speed PAM transmissions are discussed. Various driving strategies to achieve optical PAM signals are presented. Some of the state-of-the-art SiP PAM modulators and integrated transmitters are reviewed

Transmetteurs photoniques sur silicium pour les transmissions optiques à grande capacité

Les applications exigeant des très nombreuses données (médias sociaux, diffusion vidéo en continu, mégadonnées, etc.) se développent à un rythme rapide, ce qui nécessite de plus en plus de liaisons optiques ultra-rapides. Ceci implique le développment des transmetteurs optiques intégrés et à bas coût et plus particulirement en photonique sur silicium en raison de ses avantages par rapport aux autres technologies (LiNbO3 et InP), tel que la compatibilité avec le procédé de fabrication CMOS. Les modulateurs optoélectronique sont un élément essentiel dans la communication op-tique. Beaucoup de travaux de recherche sont consacrées au développement de dispositifs optiques haut débit efficaces. Cependant, la conception de modulateurs en photonique sur sili-cium (SiP) haut débit est diffcile, principalement en raison de l'absence d'effet électro-optique intrinsèque dans le silicium. De nouvelles approches et de architectures plus performances doivent être développées afin de satisfaire aux critères réliés au système d'une liaison optique aux paramètres de conception au niveau du dispositif integré. En outre, la co-conception de circuits integrés photoniques sur silicium et CMOS est cruciale pour atteindre tout le potentiel de la technologie de photonique sur silicium. Ainsi cette thèse aborde les défits susmentionnés. Dans notre première contribution, nous préesentons pour la première fois un émetteur phononique sur silicium PAM-4 sans utiliser un convertisseur numérique analog (DAC)qui comprend un modulateur Mach Zehnder à électrodes segmentées SiP (LES-MZM) implémenté dans un procédé photonique sur silicium générique avec jonction PN latérale et son conducteur CMOS intégré. Des débits allant jusqu'à 38 Gb/s/chnnel sont obtenus sans utili-ser un convertisseur numérique-analogique externe. Nous présentons également une nouvelle procédure de génération de délai dans le excitateur de MOS complémentaire. Un effet, un délai robuste aussi petit que 7 ps est généré entre les canaux de conduite. Dans notre deuxième contribution, nous présentons pour la première fois un nouveau fac-teur de mérite (FDM) pour les modulateurs SiP qui inclut non seulement la perte optique et l'efficacité (comme les FDMs précédents), mais aussi la bande passante électro-optique du modulateur SiP (BWEO). Ce nouveau FDM peut faire correspondre les paramètres de conception physique du modulateur SiP à ses critères de performance au niveau du système, facilitant à la fois la conception du dispositif optique et l'optimisation du système. Pour la première fois nous définissons et utilisons la pénalité de puissance du modulateur (MPP) induite par le modulateur SiP pour étudier la dégradation des performances au niveau du système induite par le modulateur SiP dans une communication à base de modulation d'amplitude d'impulsion optique. Nous avons développé l'équation pour MPP qui inclut les facteurs de limitation du modulateur (perte optique, taux d'extinction limité et limitation de la bande passante électro-optique). Enfin, dans notre troisième contribution, une nouvelle méthodologie de conception pour les modulateurs en SiP intégré à haute débit est présentée. La nouvelle approche est basée sur la minimisation de la MPP SiP en optimisant l'architecture du modulateur et le point de fonctionnement. Pour ce processus, une conception en longueur unitaire du modulateur Mach Zehnder (MZM) peut être optimisée en suivant les spécifications du procédé de fabrication et les règles de conception. Cependant, la longueur et la tension de biais du d'éphaseur doivent être optimisées ensemble (par exemple selon vitesse de transmission et format de modulation). Pour vérifier l'approche d'optimisation proposée expérimentale mont, a conçu un modulateur photonique sur silicium en phase / quadrature de phase (IQ) ciblant le format de modulation 16-QAM à 60 Gigabaud. Les résultats expérimentaux prouvent la fiabilité de la méthodologie proposée. D'ailleurs, nous avons augmenté la vitesse de transmission jusqu'à 70 Gigabaud pour tester la limite de débit au système. Une transmission de données dos à dos avec des débits binaires de plus de 233 Gigabit/s/channel est observée. Cette méthodologie de conception ouvre ainsi la voie à la conception de la prochaine génération d'émetteurs intégrés à double polarisation 400+ Gigabit/s/channel.Data-hungry applications (social media, video streaming, big data, etc.) are expanding at a fast pace, growing demand for ultra-fast optical links. This driving force reveals need for low-cost, integrated optical transmitters and pushes research in silicon photonics because of its advantages over other platforms (i.e. LiNbO3 and InP), such as compatibility with CMOS fabrication processes, the ability of on-chip polarization manipulation, and cost effciency. Electro-optic modulators are an essential component of optical communication links and immense research is dedicated to developing effcient high-bitrate devices. However, the design of high-capacity Silicon Photonics (SiP) transmitters is challenging, mainly due to lack of inherent electro-optic effect in silicon. New design methodologies and performance merits have to be developed in order to map the system-level criteria of an optical link to the design parameters in device-level. In addition, co-design of silicon photonics and CMOS integrated circuits is crucial to reveal the full potential of silicon photonics. This thesis addresses the aforementioned challenges. In our frst contribution, for the frst time we present a DAC-less PAM-4 silicon photonic transmitter that includes a SiP lumped-element segmented-electrode Mach Zehnder modula-tor (LES-MZM) implemented in a generic silicon photonic process with lateral p-n junction and its co-designed CMOS driver. Using post processing, bitrates up to 38 Gb/s/channel are achieved without using an external digital to analog converter. We also presents a novel delay generation procedure in the CMOS driver. A robust delay as small as 7 ps is generated between the driving channels. In our second contribution, for the frst time we present a new figure of merit (FOM) for SiP modulators that includes not only the optical loss and effciency (like the prior FOMs), but also the SiP modulator electro-optic bandwidth ( BWEO). This new FOM can map SiP modulator physical design parameters to its system-level performance criteria, facilitating both device design and system optimization. For the frst time we define and employ the modulator power penalty (MPP) induced by the SiP modulator to study the system level performance degradation induced by SiP modulator in an optical pulse amplitude modulation link. We develope a closed-form equation for MPP that includes the SiP modulator limiting factors (optical loss, limited extinction ratio and electro-optic bandwidth limitation). Finally in our third contribution, we present a novel design methodology for integrated high capacity SiP modulators. The new approach is based on minimizing the power penalty of a SiP modulator (MPP) by optimizing modulator design and bias point. For the given process, a unit-length design of Mach Zehnder modulator (MZM) can be optimized following the process specifications and design rules. However, the length and the bias voltage of the phase shifter must be optimized together in a system context (e.g., baud rate and modulation format). Moreover, to verify the proposed optimization approach in experiment, we design an in-phase/quadrature-phase (IQ) silicon photonic modulator targeting 16-QAM modulation format at 60 Gbaud. Experimental results proves the reliability of our proposed methodology. We further push the baud rate up to 70 Gbaud to examine the capacity boundary of the device. Back to back data transmission with bitrates more than 233 Gb/s/channel are captured. This design methodology paves the way for designing the next generation of integrated dual- polarization 400+ Gb/s/channel transmitters

대역폭 증대 기술을 이용한 전력 효율적 고속 송신 시스템 설계

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022.2. 정덕균.The high-speed interconnect at the datacenter is being more crucial as 400 Gb Ethernet standards are developed. At the high data rate, channel loss re-quires bandwidth extension techniques for transmitters, even for short-reach channels. On the other hand, as the importance of east-to-west connection is rising, the data center architectures are switching to spine-leaf from traditional ones. In this trend, the number of short-reach optical interconnect is expected to be dominant. The vertical-cavity surface-emitting laser (VCSEL) is a com-monly used optical modulator for short-reach interconnect. However, since VCSEL has low bandwidth and nonlinearity, the optical transmitter also needs bandwidth-increasing techniques. Additionally, the power consumption of data centers reaches a point of concern to affect climate change. Therefore, this the-sis focuses on high-speed, power-efficient transmitters for data center applica-tions. Before the presenting circuit design, bandwidth extension techniques such as fractionally-spaced feed-forward equalizer (FFE), on-chip transmission line, inductive peaking, and T-coil are mathematically analyzed for their effec-tiveness. For the first chip, a power and area-efficient pulse-amplitude modulation 4 (PAM-4) transmitter using 3-tap FFE based on a slow-wave transmission line is presented. A passive delay line is adopted for generating an equalizer tap to overcome the high clocking power consumption. The transmission line achieves a high slow-wave factor of 15 with double floating metal shields around the differential coplanar waveguide. The transmitter includes 4:1 multi-plexers (MUXs) and a quadrature clock generator for high-speed data genera-tion in a quarter-rate system. The 4:1 MUX utilizes a 2-UI pulse generator, and the input configuration is determined by qualitative analysis. The chip is fabri-cated in 65 nm CMOS technology and occupies an area of 0.151 mm2. The proposed transmitter system exhibits an energy efficiency of 3.03 pJ/b at the data rate of 48 Gb/s with PAM-4 signaling. The second chip presents a power-efficient PAM-4 VCSEL transmitter using 3-tap FFE and negative-k T-coil. The phase interpolators (PIs) generate frac-tionally-spaced FFE tap and correct quadrature phase error. The PAM-4 com-bining 8:1 MUX is proposed rather than combining at output driver with double 4:1 MUXs to reduce serializing power consumption. T-coils at the internal and output node increase the bandwidth and remove inter-symbol interference (ISI). The negative-k T-coil at the output network increases the bandwidth 1.61 times than without T-coil. The VCSEL driver is placed on the high VSS domain for anode driving and power reduction. The chip is fabricated in 40 nm CMOS technology. The proposed VCSEL transmitter operates up to 48 Gb/s NRZ and 64 Gb/s PAM-4 with the power efficiency of 3.03 pJ/b and 2.09 pJ/b, respec-tively.400Gb 이더넷 표준이 개발됨에 따라 데이터 센터의 고속 상호 연결이 더욱 중요해지고 있다. 높은 데이터 속도에서의 채널 손실에 의해 단거리 채널의 경우에도 송신기에 대한 대역폭 확장 기술이 필요하다. 한편, 데이터 센터 내 동-서 연결의 중요성이 높아지면서 데이터 센터 아키텍처가 기존의 아키텍처에서 스파인-리프로 전환되고 있다. 이러한 추세에서 단거리 광학 인터커넥트의 수가 점차 우세해질 것으로 예상된다. 수직 캐비티 표면 방출 레이저(VCSEL)는 일반적으로 단거리 상호 연결을 위해 사용되는 광학 모듈레이터이다. VCSEL은 낮은 대역폭과 비선형성을 가지고 있기 때문에, 광 송신기도 대역폭 증가 기술을 필요로 한다. 또한, 데이터 센터의 전력 소비는 기후 변화에 영향을 미칠 수 있는 우려 지점에 도달했다. 따라서, 본 논문은 데이터 센터 응용을 위한 고속 전력 효율적인 송신기에 초점을 맞추고 있다. 회로 설계를 제시하기 전에, 부분 간격 피드-포워드 이퀄라이저 (FFE), 온칩 전송선로, 인덕터, T-코일과 같은 대역폭 확장 기술을 수학적으로 분석한다. 첫 번째 칩은 저속파 전송선로를 기반으로 한 3-탭 FFE를 사용하는 전력 및 면적 효율적인 펄스-진폭-변조 4(PAM-4) 송신기를 제시한다. 높은 클럭 전력 소비를 극복하기 위해 이퀄라이저 탭 생성을 위해 수동소자 지연 라인을 채택했다. 전송 라인은 차동 동일평면도파관 주위에 이중 플로팅 금속 차폐를 사용하여 15의 높은 전달속도 감쇠를 달성한다. 송신기에는 4:1 멀티플렉서(MUX)와 4-위상 클럭 생성기가 포함되어 있다. 4:1 MUX는 2-UI 펄스 발생기를 사용하며, 정성 분석에 의해 입력 구성이 결정된다. 이 칩은 65 nm CMOS 기술로 제작되었으며 0.151 mm2의 면적을 차지한다. 제안된 송신기 시스템은 PAM-4 신호와 함께 48 Gb/s의 데이터 속도에서 3.03 pJ/b의 에너지 효율을 보여준다. 두 번째 칩에서는 3-탭 FFE 및 역회전 T-코일을 사용하는 전력 효율적인 PAM-4 VCSEL 송신기를 제시한다. 위상 보간기(PI)는 부분 간격 FFE 탭을 생성하고 4-위상 클럭 오류를 수정하는 데 사용된다. 직렬화 전력 소비를 줄이기 위해 출력 드라이버에서 MSB와 LSB를 두 개의 4:1 MUX를 통해 결합하는 대신 8:1 MUX를 통해 PAM-4로 결합하는 회로가 제안된다. 내부 및 출력 노드에서 T-코일은 대역폭을 증가시키고 기호 간 간섭(ISI)을 제거한다. 출력 네트워크에서 역회전 T-코일은 T-코일이 없는 경우보다 대역폭을 1.61배 증가시킨다. VCSEL 드라이버는 양극 구동 및 전력 감소를 위해 높은 VSS 도메인에 배치된다. 이 칩은 40 nm CMOS 기술로 제작되었다. 제안된 VCSEL 송신기는 각각 3.03pJ/b와 2.09pJ/b의 전력 효율로 최대 48Gb/s NRZ와 64Gb/s PAM-4까지 작동한다.ABSTRACT I CONTENTS III LIST OF FIGURES V LIST OF TABLES IX CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 5 CHAPTER 2 BACKGROUND OF HIGH-SPEED INTERFACE 6 2.1 OVERVIEW 6 2.2 BASIS OF DATA CENTER ARCHITECTURE 9 2.3 SHORT-REACH INTERFACE STANDARDS 12 2.4 ANALYSES OF BANDWIDTH EXTENSION TECHNIQUES 16 2.4.1 FRACTIONALLY-SPACED FFE 16 2.4.2 TRANSMISSION LINE 21 2.4.3 INDUCTOR 24 2.4.4 T-COIL 33 CHAPTER 3 DESIGN OF 48 GB/S PAM-4 ELECTRICAL TRANSMITTER IN 65 NM CMOS 43 3.1 OVERVIEW 43 3.2 FFE BASED ON DOUBLE-SHIELDED COPLANAR WAVEGUIDE 46 3.2.1 BASIC CONCEPT 46 3.2.2 PROPOSED DOUBLE-SHIELDED COPLANAR WAVEGUIDE 47 3.3 DESIGN CONSIDERATION ON 4:1 MUX 50 3.4 PROPOSED PAM-4 ELECTRICAL TRANSMITTER 53 3.5 MEASUREMENT 57 CHAPTER 4 DESIGN OF 64 GB/S PAM-4 OPTICAL TRANSMITTER IN 40 NM CMOS 64 4.1 OVERVIEW 64 4.2 DESIGN CONSIDERATION OF OPTICAL TRANSMITTER 66 4.3 PROPOSED PAM-4 VCSEL TRANSMITTER 69 4.4 MEASUREMENT 82 CHAPTER 5 CONCLUSIONS 88 BIBLIOGRAPHY 90 초 록 101박

Wideband integrated circuits for optical communication systems

The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. With datacenters rapidly becoming significantenergy consumers on the global scale, the energy efficiency of the optical interconnecttransceivers takes a primary role in the development of novel systems. Furthermore,wideband optical links are finding application inside very high throughput satellite(V/HTS) payloads used in the ever-expanding cloud of telecommunication satellites,enabled by the maturity of the existing fiber based optical links and the hightechnology readiness level of radiation hardened integrated circuit processes. Thereare several additional challenges unique in the design of a wideband optical system.The overall system noise must be optimized for the specific application, modulationscheme, PD and laser characteristics. Most state-of-the-art wideband circuits are builton high-end semiconductor SiGe and InP technologies. However, each technologydemands specific design decisions to be made in order to get low noise, high energyefficiency and adequate bandwidth. In order to overcome the frequency limitationsof the optoelectronic components, bandwidth enhancement and channel equalizationtechniques are used. In this work various blocks of optical communication systems aredesigned attempting to tackle some of the aforementioned challenges. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback,are designed and measured, utilizing a state-of-the-art 130 nm InP DHBT technology.A modular equalizer block built in 130 nm SiGe HBT technology is presented. Threeultra-wideband traveling wave amplifiers, a 4-cell, a single cell and a matrix single-stage, are designed in a 250 nm InP DHBT process to test the limits of distributedamplification. A differential VCSEL driver circuit is designed and integrated in a4x 28 Gbps transceiver system for intra-satellite optical communications based in arad-hard 130nm SiGe process

PAM4-바이너리 브리지 칩용 PAM4 트랜스미터 설계

학위논문(석사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022. 8. 정덕균.고성능 컴퓨팅 시스템, 대용량의 데이터 센터, AI 기술의 발전으로 인해 유선 통신의 대역폭 요구 수준은 기하급수적으로 증가하고 있다. 그러나 I/O 회로의 핀당 대역폭의 향상은 통신 채널의 다양한 한계로 인해 어려움을 겪고 있다. 이는 차세대 DRAM 분야에서도 예외는 아니다. 핀당 데이터 전송 속도를 증가시키는 연구 방향에서는 어느 정도 한계에 봉착하면서 최근에는 High Bandwidth Memory (HBM)와 같이 핀의 개수를 급격히 늘려서 대역폭을 증가시키는 기술도 발전하고 있다. 다른 접근 방식 중 한가지가 다중 레벨 신호 방식이다. 기존의 Non-Return-to-Zero (NRZ) 신호 대신에 다중 레벨 신호 방식을 이용하면 동일한 Nyquist 주파수에서 데이터 속도를 높일 수 있고 이는 DRAM의 차세대 고대역폭 I/O 인터페이스에 좋은 솔루션이 될 수 있으며 현재까지는 4레벨 펄스 진폭 변조 방식 (PAM-4)이 널리 채택되어 있다. 하지만 현재 PAM-4 방식 DRAM이 양산 단계가 아니기 때문에 PAM-4 전용 Memory Tester가 없는 상황이다. 본 논문에서는 차세대 메모리 테스트를 위한 32 Gb/s PAM4 바이너리 브리지에서의 트랜스미터를 제안한다. NRZ 테스터에서 브리지로 전송된 저속 데이터는 고속 PAM4 데이터로 변환되어 메모리로 전달된다. 접지 종단 PAM4 드라이버는 2-탭 피드포워드 이퀄라이저로 출력 전류를 제어하여 0.95의 레벨 불일치 비율 (RLM)을 달성함으로써 단일 종단 출력을 제공한다. 40 nm CMOS 기술로 제작된 브리지 트랜스미터는 0.57 mm2의 활성 영역을 차지하고 102.1 mW의 전력을 소모한다.With the advancement of high-performance computing systems, large-capacity data centers, and AI technologies, the level of bandwidth demand for wired communication is increasing exponentially. However, the improvement of the bandwidth per pin in the I/O circuit compared to the required bandwidth level is difficult due to various limitations of the transmission channel. This is no exception in the next generation of DRAM. While facing limitations from the perspective of research that increases data transmission speed per pin, technologies that increase I/O bandwidth by rapidly increasing the number of pins, such as High Bandwidth Memory (HBM), have also recently developed. One of the other approaches is a multi-level signaling method. Using a multi-level signaling method instead of a conventional Non-Return-to-Zero (NRZ) signal can increase data speed at the same Nyquist frequency, which can be a good solution for the next-generation high-bandwidth I/O interface of DRAM, and so far, a four-level Pulse Amplitude Modulation (PAM-4) has been widely adopted. However, since PAM4 DRAM is not in the mass production stage yet, there is no memory tester dedicated to PAM4 signaling. This paper proposes a transmitter block on a 32 Gb/s PAM4 binary bridge for next-generation memory testing. The low-speed data transmitted from the NRZ tester to the bridge is converted into high-speed PAM4 data through half-rate clock control and transferred to the memory. The ground termination PAM4 driver provides a single-ended output by controlling the output current with a two-tap feed forward equalizer to achieve a Level separation Mismatch Ratio (RLM) of 0.95. Bridge transmitter manufactured with 40 nm CMOS technology occupies an active area of 0.57 mm2 and consumes 102.1 mW of power.ABSTRACT I CONTENTS Ⅲ LIST OF FIGURES Ⅴ LIST OF TABLES Ⅶ CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 4 CHAPTER 2 BACKGROUNDS 5 2.1 OVERVIEW 5 2.2 BASIC OF MULTI LEVEL SIGNALING 7 2.3 NECESSITY OF PAM4-BINARY BRIDGE 11 CHAPTER 3 DESIGN OF PAM4 TRANSMITTER FOR PAM4-BINARY BRIDGE 14 3.1 DESIGN CONSIDERATION 14 3.2 OVERALL ARCHITECTURE 17 3.3 CIRCUIT IMPLEMENTATION 19 3.3.1 CLOCK GENERATOR 19 3.3.2 PARALLEL PRBS GENERATOR 23 3.3.3 DATA ALIGN / GRAY CODE ENDCODER 26 3.3.4 FFE CONTROL/ SERIALIZER 30 3.3.5 PAM4 DRIVER 33 CHAPTER 4 MEASUREMENT RESULTS 38 4.1 CHIP PHOTOMICROGRAPH 38 4.2 MEASUREMENT SETUP 39 4.3 MEASUREMENT RESULTS 40 4.4 PERFORMANCE SUMMARY 42 CHAPTER 5 CONCLUSION 46 BIBLIOGRAPHY 47 초 록 50석

50 GBd PAM4 transmitter with a 55nm SiGe BiCMOS driver and silicon photonic segmented MZM

We demonstrate an optical transmitter consisting of a limiting SiGe BiCMOS driver co-designed and co-packaged with a silicon photonic segmented traveling-wave Mach-Zehnder modulator (MZM). The MZM is split into two traveling-wave segments to increase the bandwidth and to allow a 2-bit DAC functionality. Two limiting driver channels are used to drive these segments, allowing both NRZ and PAM4 signal generation in the optical domain. The voltage swing as well as the peaking of the driver output are tunable, hence the PAM4 signal levels can be tuned and possible bandwidth limitations of the MZM segments can be partially alleviated. Generation of 50 Gbaud and 53 Gbaud PAM4 yields a TDECQ of 2.8 and 3.8 dB with a power efficiency of 3.9 and 3.6 pJ/bit, respectively; this is the best reported efficiency for co-packaged silicon transmitters for short-reach datacenter interconnects at these data rates. With this work, we show the potential of limiting drivers and segmented traveling-wave modulators in 400G capable short-reach optical interconnects