A survey on RF and microwave doherty power amplifier for mobile handset applications

This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.Agencia Estatal de Investigación | Ref. TEC2017-88242-C3-2-RFundação para a Ciência e a Tecnologia | Ref. UIDP/50008/201

High-Power Microwave/ Radio-Frequency Components, Circuits, and Subsystems for Next-Generation Wireless Radio Front-Ends

As the wireless communication systems evolve toward the future generation, intelligence will be the main signature/trend, well known as the concepts of cognitive and software-defined radios which offer ultimate data transmission speed, spectrum access, and user capacity. During this evolution, the human society may experience another round of `information revolution\u27. However, one of the major bottlenecks of this promotion lies in hardware realization, since all the aforementioned intelligent systems are required to cover a broad frequency range to support multiple communication bands and dissimilar standards. As the essential part of the hardware, power amplifiers (PAs) capable of operating over a wide bandwidth have been identified as the key enabling technology. This dissertation focuses on novel methodologies for designing and realizing broadband high-power PAs, their integration with high-quality-factor (high-Q) tunable filters, and relevant investigations on the reliabilities of these tunable devices. It can be basically divided into three major parts: 1.Broadband High-Efficiency Power Amplifiers. Obtaining high PA efficiency over a wide bandwidth is very challenging, because of the difficulty of performing broadband multi-harmonic matching. However, high efficiency is the critical feature for high-performance PAs due to the ever-increasing demands for environmental friendliness, energy saving, and longer battery life. In this research, novel design methodologies of broad-band highly efficient PAs are proposed, including the first-ever mode-transferring PA theory, novel matching network topology, and wideband reconfigurable PA architecture. These techniques significantly advance the state-of-the-art in terms of bandwidth and efficiency. 2.Co-Design of PAs and High-Q Tunable Filters. When implementing the intelligent communication systems, the conventional approach based on independent RF design philosophy suffers from many inherent defects, since no global optimization is achieved leading to degraded overall performance. An attractive method to solve these difficulties is to co-design critical modules of the transceiver chain. This dissertation presents the first-ever co-design of PAs and tunable filters, in which the redundant inter-module matching is entirely eliminated, leading to minimized size & cost and maximized overall performance. The saved hardware resources can be further transferred to enhance system functionalities. Moreover, we also demonstrate that co-design of PAs and filters can lead to more functionalities/benefits for the wireless systems, e.g. efficient and linear amplification of dual-carrier (or multi-carrier) signals. 3.High-Power/Non-Linear Study on Tunable Devices. High-power limitation/power handling is an everlasting theme of tunable devices, as it determines the operational life and is the threshold for actual industrial applications. Under high-power operation, the high RF voltage can lead to failures like tuners\u27 mechanical deflections and gas discharge in the small air spacing of the cavity. These two mechanisms are studied independently with their instantaneous and long-term effects on the device performance. In addition, an anti-biased topology of electrostatic RF MEMS varactors and tunable filters is proposed and experimentally validated for reducing the non-linear effect induced by bias-noise. These investigations will enlighten the designers on how to avoid and/or minimize the non-ideal effects, eventually leading to longer life cycle and performance sustainability of the tunable devices

Energy Efficient RF Transmitter Design using Enhanced Breakdown Voltage SOI-CMOS Compatible MESFETs

abstract: The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors. Silicon-on-insulator (SOI) metal semiconductor field effect transistors (MESFETs) have been introduced to remedy the limited headroom concern in CMOS technologies. The MESFETs presented in this thesis have been fabricated on different SOI-CMOS processes without making any change to the standard fabrication steps and offer 2-30 times higher breakdown voltage than the MOSFETs on the same process. This thesis explains the design steps of high efficiency and wideband RF transmitters using the proposed SOI-CMOS compatible MESFETs. This task involves DC and RF characterization of MESFET devices, along with providing a compact Spice model for simulation purposes. This thesis presents the design of several SOI-MESFET RF power amplifiers operating at 433, 900 and 1800 MHz with ~40% bandwidth. Measurement results show a peak power added efficiency (PAE) of 55% and a peak output power of 22.5 dBm. The RF-PAs were designed to operate in Class-AB mode to minimize the linearity degradation. Class-AB power amplifiers lead to poor power added efficiency, especially when fed with signals with high peak to average power ratio (PAPR) such as wideband code division multiple access (W-CDMA). Polar transmitters have been introduced to improve the efficiency of RF-PAs at backed-off powers. A MESFET based envelope tracking (ET) polar transmitter was designed and measured. A low drop-out voltage regulator (LDO) was used as the supply modulator of this polar transmitter. MESFETs are depletion mode devices; therefore, they can be configured in a source follower configuration to have better stability and higher bandwidth that MOSFET based LDOs. Measurement results show 350 MHz bandwidth while driving a 10 pF capacitive load. A novel polar transmitter is introduced in this thesis to alleviate some of the limitations associated with polar transmitters. The proposed architecture uses the backgate terminal of a partially depleted transistor on SOI process, which relaxes the bandwidth and efficiency requirements of the envelope amplifier in a polar transmitter. The measurement results of the proposed transmitter demonstrate more than three times PAE improvement at 6-dB backed-off output power, compared to the traditional RF transmitters.Dissertation/ThesisPh.D. Electrical Engineering 201

고효율 고전압 포락선 추적 전력 증폭기에 관한 연구

학위논문 (박사)-- 서울대학교 대학원 공과대학 전기·컴퓨터공학부, 2017. 8. 서광석.In this dissertation, two advanced techniques to solve system issues in envelope tracking power amplifier (ET PA) is presented. First of all, a two-stage broadband CMOS stacked FET RF power amplifier (PA) with a reconfigurable interstage matching network is developed for wideband envelope tracking (ET). The proposed RF PA is designed based on Class-J mode of operation, where the output matching is realizedwith a two-section low-pass matching network. To overcome the bandwidth (BW) limitation from the high- interstage impedance, a reconfigurable matching network is proposed, allowing a triple frequency mode of operation using two RF switches. The proposed RF PA is fabricated in a 0.32-μm silicon-on-insulator CMOS process and shows continuous wave (CW) power-added efficiencies (PAEs) higher than 60% from 0.65 to 1.03 GHz with a peak PAE of 69.2% at 0.85 GHz. The complete ET PA system performance is demonstrated using the envelope amplifier fabricated on the same process. When measured using a 20-MHz BW long-term evolution signal, the overall system PAE of the ET PA is higher than 40% from 0.65 to 0.97 GHz while evolved universal terrestrial radio access (E-UTRA) adjacent channel leakage ratios (ACLRs) are better than –33 dBc across the entire BW after memoryless digital pre-distortion. To our knowledge, this study represents the highest overall system performance in terms of PAE and BW among the published broadband ET PAs, including GaAs HBT and SiGe BiCMOS. Second, a high-efficiency gallium-nitride (GaN) envelope amplifier (EA) is developed using class-E2 architecture for wideband LTE applications. The proposed EA consists of a class-E2 resonant converter which output voltage is controlled by a frequency modulator. With a pulse frequency modulation (PFM) signal, the output of the converter can achieve a linear response to the input wideband envelope signal. The frequency modulator with a cross-coupled oscillator and a driver using stacked-FETs structure is fabricated using 0.28-μm SOI CMOS process. The class-E2 converter and PA have been implemented using a commercial GaN device. The envelope amplifier (EA) achieves 74.7% efficiency into a 50 Ω load for a 20-MHz BW LTE signal with a 7.5 dB peak-to-average power ratio (PAPR) and there is no efficiency degradation as the LTE signal bandwidth increases to 160-MHz. The ET transmitter system demonstrated using the CMOS and GaN shows an overall system efficiency of 47.4% at 35.4 dBm with 20-MHz BW LTE signal centered at 3.5 GHz. The measured E-UTRA ACLR of ET PA is –33.8 dBc at 34.4 dBm output power before linearization and –42.9 dBc at the same output power after memory digital pre-destination (DPD). When tested using 80-MHz BW LTE signal, the overall system PAE reaches 46.5% at 35.3 dBm output power and E-UTRA ACLR was measured by –31.5 dBc at 34.4 dBm output power. A wideband performance is characterized using various bandwidth LTE signals which shows only 2.3 dB ACLR degradation without PAE degradation as the signal bandwidth is increased from 20- to 80-MHz. The proposed method is a first demonstration of GaN EA cover 160-MHz BW LTE signals and overcomes the efficiency degradation of the conventional EA as the signal bandwidth increase.Abstract Contents List of Tables List of Figures 1. Introduction 1.1 Motivation 1.2 Dissertation organization 2. Broadband CMOS Stacked RF Power Amplifier Using Reconfigurable Interstage Network for Wideband Envelope Tracking 2.1 Introduction 2.2 Two-stage broadband class-J PA 2.2.1 Review of the class-J PA 2.2.2 BW limitation in multi-stage PAs and proposed solution 2.2.3 Output matching netwok 2.2.4 Reconfigurable interstage matching network 2.3 Design and implementation of ET PA 2.3.1 Power amplifier design 2.3.2 Envelope amplifier design 2.4 Measurement results 2.5 Conclusions 2.6 References 3. A GaN Envelope Amplifier using Class-E2 Architecture for Wideband Envelope Tracking Applications 3.1 Introduction 3.2 Operation principle of the proposed envelope amplifier 3.2.1 Operation principle of class-E inverter and rectifier 3.2.2 Operation comparison of class-E2 between PWM and PFM 3.3 Detailed ET PA design and simulation 3.3.1 Envelope amplifier design using current-starved VCO (CSVCO) 3.3.2 Envelope amplifier design using cross-coupled VCO (CCVCO) 3.4 Measurement results 3.5 Conclusions 3.6 References 4. Conclusions and Future Works Abstract in KoreanDocto

Survey on individual components for a 5 GHz receiver system using 130 nm CMOS technology

La intención de esta tesis es recopilar información desde un punto de vista general sobre los diferentes tipos de componentes utilizados en un receptor de señales a 5 GHz utilizando tecnología CMOS. Se ha realizado una descripción y análisis de cada uno de los componentes que forman el sistema, destacando diferentes tipos de configuraciones, figuras de mérito y otros parámetros. Se muestra una tabla resumen al final de cada sección, comparando algunos diseños que se han ido presentando a lo largo de los años en conferencias internacionales de la IEEE.The intention of this thesis is to gather information from an overview point about the different types of components used in a 5 GHz receiver using CMOS technology. A review of each of the components that form the system has been made, highlighting different types of configurations, figure of merits and parameters. A summary table is shown at the end of each section, comparing many designs that have been presented over the years at international conferences of the IEEE.Departamento de Ingeniería Energética y FluidomecánicaGrado en Ingeniería en Electrónica Industrial y Automátic

Direct GMSK modulation at microwave frequencies

Congestion in the radio spectrum is forcing emerging high rate wireless communication systems into upper microwave and millimeterwave frequency bands, where transceiver hardware architectures are less mature. One way to realize a simple and elegant hardware solution for a microwave transmitter is to exploit the advantages of directly modulating the phase of the carrier signal. A modulation method requiring continuous phase control of the carrier signal over the full 360 degree range is Gaussian Minimum Shift Keying (GMSK). Unfortunately, it is very difficult to design a microwave circuit to provide linear phase control of a carrier signal over the full 360 degree range using traditional methods. A novel method of obtaining continuous, linear phase modulation of a microwave carrier signal over the full 360 degree range is proposed. This method is based on controlling a phase shifter, at a subharmonic of the desired output carrier frequency, and then using a frequency multiplier to obtain the desired output frequency. The phase shifter is designed to be highly linear over a fraction of the full 360 range. The frequency multiplier is a nonlinear circuit that shifts the frequency by *'N'. The subtle part of this nonlinear operation is that the multiplier also multiplies the instantaneous phase of the phase shifter output signal by *'N', thus expanding the linear phase shift range to the required 360 degrees. Using this nonlinear frequency multiplication principle, the modulator can readily be extended into the millimeterwave region. A prototype circuit is designed and performance results are presented for this method of carrier phase modulation at 18 GHz. The prototype circuit is realized with very simple hardware, containing only a single microwave active device. An extension to the modulator involving phase locking or injection locking of a power oscillator is also suggested for obtaining higher power modulated output signals. In addition to direct continuous phase modulation, the proposed method is also suitable for a wide variety of transceiver applications, including phase synchronization of antenna and oscillator arrays, phased array antenna beam steering, indirect frequency modulation, and ultra-small carrier frequency translation