Pixel-wise parameter adaptation for single-exposure extension of the image dynamic range

High dynamic range imaging is central in application fields like surveillance, intelligent transportation and advanced driving assistance systems. In some scenarios, methods for dynamic range extension based on multiple captures have shown limitations in apprehending the dynamics of the scene. Artifacts appear that can put at risk the correct segmentation of objects in the image. We have developed several techniques for the on-chip implementation of single-exposure extension of the dynamic range. We work on the upper extreme of the range, i. e. administering the available full-well capacity. Parameters are adapted pixel-wise in order to accommodate a high intra-scene range of illuminationsPeer reviewe

Pixel-wise parameter adaptation for single-exposure extension of the image dynamic range

High dynamic range imaging is central in application fields like surveillance, intelligent transportation and advanced driving assistance systems. In some scenarios, methods for dynamic range extension based on multiple captures have shown limitations in apprehending the dynamics of the scene. Artifacts appear that can put at risk the correct segmentation of objects in the image. We have developed several techniques for the on-chip implementation of single-exposure extension of the dynamic range. We work on the upper extreme of the range, i. e. administering the available full-well capacity. Parameters are adapted pixel-wise in order to accommodate a high intra-scene range of illuminations.Ministerio de Economía (MINECO) TEC2015-66878-C3-1-RJunta de Andalucía P12-TIC 233

MOSFET Modulated Dual Conversion Gain CMOS Image Sensors

In recent years, vision systems based on CMOS image sensors have acquired significant ground over those based on charge-coupled devices (CCD). The main advantages of CMOS image sensors are their high level of integration, random accessibility, and low-voltage, low-power operation. Previously proposed high dynamic range enhancement schemes focused mainly on extending the sensor dynamic range at the high illumination end. Sensor dynamic range extension at the low illumination end has not been addressed. Since most applications require low-noise, high-sensitivity, characteristics for imaging of the dark region as well as dynamic range expansion to the bright region, the availability of a low-noise, high-sensitivity pixel device is particularly important. In this dissertation, a dual-conversion-gain (DCG) pixel architecture was proposed; this architecture increases the signal to noise ratio (SNR) and the dynamic range of CMOS image sensors at both the low and high illumination ends. The dual conversion gain pixel improves the dynamic range by changing the conversion gain based on the illumination level without increasing artifacts or increasing the imaging readout noise floor. A MOSFET is used to modulate the capacitance of the charge sensing node. Under high light illumination conditions, a low conversion gain is used to achieve higher full well capacity and wider dynamic range. Under low light conditions, a high conversion gain is enabled to lower the readout noise and achieve excellent low light performance. A sensor prototype using the new pixel architecture with 5.6μm pixel pitch was designed and fabricated using Micron Technology’s 130nm 3-metal and 2-poly silicon process. The periphery circuitries were designed to readout the pixel and support the pixel characterization needs. The pixel design, readout timing, and operation voltage were optimized. A detail sensor characterization was performed; a 127μV/e was achieved for the high conversion gain mode and 30.8μV/e for the low conversion gain mode. Characterization results confirm that a 42ke linear full well was achieved for the low conversion gain mode and 10.5ke for the high conversion gain mode. An average 2.1e readout noise was measured for the high conversion gain mode and 8.6e for the low conversion gain mode. The total sensor dynamic range was extended to 86dB by combining the two modes of operation with a 46.2dB maximum SNR. Several images were taken by the prototype sensor under different illumination levels. The simple processed color images show the clear advantage of the high conversion gain mode for the low light imaging

Propuesta de arquitectura y circuitos para la mejora del rango dinámico de sistemas de visión en un chip diseñados en tecnologías CMOS profundamente submicrométrica

El trabajo presentado en esta tesis trata de proponer nuevas técnicas para la expansión del rango dinámico en sensores electrónicos de imagen. En este caso, hemos dirigido nuestros estudios hacia la posibilidad de proveer dicha funcionalidad en un solo chip. Esto es, sin necesitar ningún soporte externo de hardware o software, formando un tipo de sistema denominado Sistema de Visión en un Chip (VSoC). El rango dinámico de los sensores electrónicos de imagen se define como el cociente entre la máxima y la mínima iluminación medible. Para mejorar este factor surgen dos opciones. La primera, reducir la mínima luz medible mediante la disminución del ruido en el sensor de imagen. La segunda, incrementar la máxima luz medible mediante la extensión del límite de saturación del sensor. Cronológicamente, nuestra primera opción para mejorar el rango dinámico se basó en reducir el ruido. Varias opciones se pueden tomar para mejorar la figura de mérito de ruido del sistema: reducir el ruido usando una tecnología CIS o usar circuitos dedicados, tales como calibración o auto cero. Sin embargo, el uso de técnicas de circuitos implica limitaciones, las cuales sólo pueden ser resueltas mediante el uso de tecnologías no estándar que están especialmente diseñadas para este propósito. La tecnología CIS utilizada está dirigida a la mejora de la calidad y las posibilidades del proceso de fotosensado, tales como sensibilidad, ruido, permitir imagen a color, etcétera. Para estudiar las características de la tecnología en más detalle, se diseñó un chip de test, lo cual permite extraer las mejores opciones para futuros píxeles. No obstante, a pesar de un satisfactorio comportamiento general, las medidas referentes al rango dinámico indicaron que la mejora de este mediante sólo tecnología CIS es muy limitada. Es decir, la mejora de la corriente oscura del sensor no es suficiente para nuestro propósito. Para una mayor mejora del rango dinámico se deben incluir circuitos dentro del píxel. No obstante, las tecnologías CIS usualmente no permiten nada más que transistores NMOS al lado del fotosensor, lo cual implica una seria restricción en el circuito a usar. Como resultado, el diseño de un sensor de imagen con mejora del rango dinámico en tecnologías CIS fue desestimado en favor del uso de una tecnología estándar, la cual da más flexibilidad al diseño del píxel. En tecnologías estándar, es posible introducir una alta funcionalidad usando circuitos dentro del píxel, lo cual permite técnicas avanzadas para extender el límite de saturación de los sensores de imagen. Para este objetivo surgen dos opciones: adquisición lineal o compresiva. Si se realiza una adquisición lineal, se generarán una gran cantidad de datos por cada píxel. Como ejemplo, si el rango dinámico de la escena es de 120dB al menos se necesitarían 20-bits/píxel, log2(10120/20)=19.93, para la representación binaria de este rango dinámico. Esto necesitaría de amplios recursos para procesar esta gran cantidad de datos, y un gran ancho de banda para moverlos al circuito de procesamiento. Para evitar estos problemas, los sensores de imagen de alto rango dinámico usualmente optan por utilizar una adquisición compresiva de la luz. Por lo tanto, esto implica dos tareas a realizar: la captura y la compresión de la imagen. La captura de la imagen se realiza a nivel de píxel, en el dispositivo fotosensor, mientras que la compresión de la imagen puede ser realizada a nivel de píxel, de sistema, o mediante postprocesado externo. Usando el postprocesado, existe un campo de investigación que estudia la compresión de escenas de alto rango dinámico mientras se mantienen los detalles, produciendo un resultado apropiado para la percepción humana en monitores convencionales de bajo rango dinámico. Esto se denomina Mapeo de Tonos (Tone Mapping) y usualmente emplea solo 8-bits/píxel para las representaciones de imágenes, ya que éste es el estándar para las imágenes de bajo rango dinámico. Los píxeles de adquisición compresiva, por su parte, realizan una compresión que no es dependiente de la escena de alto rango dinámico a capturar, lo cual implica una baja compresión o pérdida de detalles y contraste. Para evitar estas desventajas, en este trabajo, se presenta un píxel de adquisición compresiva que aplica una técnica de mapeo de tonos que permite la captura de imágenes ya comprimidas de una forma optimizada para mantener los detalles y el contraste, produciendo una cantidad muy reducida de datos. Las técnicas de mapeo de tonos ejecutan normalmente postprocesamiento mediante software en un ordenador sobre imágenes capturadas sin compresión, las cuales contienen una gran cantidad de datos. Estas técnicas han pertenecido tradicionalmente al campo de los gráficos por ordenador debido a la gran cantidad de esfuerzo computacional que requieren. Sin embargo, hemos desarrollado un nuevo algoritmo de mapeo de tonos especialmente adaptado para aprovechar los circuitos dentro del píxel y que requiere un reducido esfuerzo de computación fuera de la matriz de píxeles, lo cual permite el desarrollo de un sistema de visión en un solo chip. El nuevo algoritmo de mapeo de tonos, el cual es un concepto matemático que puede ser simulado mediante software, se ha implementado también en un chip. Sin embargo, para esta implementación hardware en un chip son necesarias algunas adaptaciones y técnicas avanzadas de diseño, que constituyen en sí mismas otra de las contribuciones de este trabajo. Más aún, debido a la nueva funcionalidad, se han desarrollado modificaciones de los típicos métodos a usar para la caracterización y captura de imágenes

Active pixel sensors for breast biopsy analysis using x-ray diffraction.

Breast cancer diagnosis currently requires biopsy samples to be analysed by a histopathologist a time consuming, highly specialised process. X-ray diffraction is a quantitative technique that can distinguish between healthy and diseased breast biopsy samples using the change in proportions of fat and fibrous tissue that occurs when cancer invades. A semi-automated breast biopsy analysis system based on X-ray diffraction could yield a faster patient diagnosis. Recording X-ray diffraction patterns is a challenging task needing low noise, large area, and wide dynamic range detectors. Scientific complementary metal oxide semiconductor (CMOS) Active Pixel Sensors will soon be able to meet all of these demands in a single device. Characterization of two novel Active Pixel Sensors that advance towards an ideal X-ray diffraction detector is presented. 'Vanilla' exhibits a low read noise of 55e r.m.s. and high quantum efficiency of up to 70% so was selected for the design and implementation of the first 'Active Pixel X-ray Diffraction' (APXRD) system. Following on from Vanilla, the 'Large Area Sensor' (LAS) covered an area of over 29cm2 and had a wide dynamic range of over 95dB. The first linear systems model of an Active Pixel Flat Panel Imager (scintillator coupled APS) was formulated in the design of the APXRD system, to select filters to narrow the spectral width of the X-ray beam and predict the recorded scatter intensity. Following system implementation, scatter signatures were recorded for numerous breast tissue equivalent samples. A multivariate analysis model calibrated with these was able to predict the percentage fat content of an 'unknown' sample to within 3% a very promising result. The width of the filtered polychromatic X-ray spectrum had only a minor influence on the APXRD scatter signatures indicating that the system preserves all relevant structural information

Miniature high dynamic range time-resolved CMOS SPAD image sensors

Since their integration in complementary metal oxide (CMOS) semiconductor technology in 2003, single photon avalanche diodes (SPADs) have inspired a new era of low cost high integration quantum-level image sensors. Their unique feature of discerning single photon detections, their ability to retain temporal information on every collected photon and their amenability to high speed image sensor architectures makes them prime candidates for low light and time-resolved applications. From the biomedical field of fluorescence lifetime imaging microscopy (FLIM) to extreme physical phenomena such as quantum entanglement, all the way to time of flight (ToF) consumer applications such as gesture recognition and more recently automotive light detection and ranging (LIDAR), huge steps in detector and sensor architectures have been made to address the design challenges of pixel sensitivity and functionality trade-off, scalability and handling of large data rates. The goal of this research is to explore the hypothesis that given the state of the art CMOS nodes and fabrication technologies, it is possible to design miniature SPAD image sensors for time-resolved applications with a small pixel pitch while maintaining both sensitivity and built -in functionality. Three key approaches are pursued to that purpose: leveraging the innate area reduction of logic gates and finer design rules of advanced CMOS nodes to balance the pixel’s fill factor and processing capability, smarter pixel designs with configurable functionality and novel system architectures that lift the processing burden off the pixel array and mediate data flow. Two pathfinder SPAD image sensors were designed and fabricated: a 96 × 40 planar front side illuminated (FSI) sensor with 66% fill factor at 8.25μm pixel pitch in an industrialised 40nm process and a 128 × 120 3D-stacked backside illuminated (BSI) sensor with 45% fill factor at 7.83μm pixel pitch. Both designs rely on a digital, configurable, 12-bit ripple counter pixel allowing for time-gated shot noise limited photon counting. The FSI sensor was operated as a quanta image sensor (QIS) achieving an extended dynamic range in excess of 100dB, utilising triple exposure windows and in-pixel data compression which reduces data rates by a factor of 3.75×. The stacked sensor is the first demonstration of a wafer scale SPAD imaging array with a 1-to-1 hybrid bond connection. Characterisation results of the detector and sensor performance are presented. Two other time-resolved 3D-stacked BSI SPAD image sensor architectures are proposed. The first is a fully integrated 5-wire interface system on chip (SoC), with built-in power management and off-focal plane data processing and storage for high dynamic range as well as autonomous video rate operation. Preliminary images and bring-up results of the fabricated 2mm² sensor are shown. The second is a highly configurable design capable of simultaneous multi-bit oversampled imaging and programmable region of interest (ROI) time correlated single photon counting (TCSPC) with on-chip histogram generation. The 6.48μm pitch array has been submitted for fabrication. In-depth design details of both architectures are discussed

3rd International Workshop on Instrumentation for Planetary Missions : October 24–27, 2016, Pasadena, California

The purpose of this workshop is to provide a forum for collaboration, exchange of ideas and information, and discussions in the area of the instruments, subsystems, and other payload-related technologies needed to address planetary science questions. The agenda will compose a broad survey of the current state-of-the-art and emerging capabilities in instrumentation available for future planetary missions.Universities Space Research Association (USRA); Lunar and Planetary Institute (LPI); Jet Propulsion Laboratory (JPL)Conveners: Sabrina Feldman, Jet Propulsion Laboratory, David Beaty, Jet Propulsion Laboratory ; Science Organizing Committee: Carlton Allen, Johnson Space Center (retired) [and 12 others

Microwave resonant sensors

Microwave resonant sensors use the spectral characterisation of a resonator to make high sensitivity measurements of material electromagnetic properties at GHz frequencies. They have been applied to a wide range of industrial and scientific measurements, and used to study a diversity of physical phenomena. Recently, a number of challenging dynamic applications have been developed that require very high speed and high performance, such as kinetic inductance detectors and scanning microwave microscopes. Others, such as sensors for miniaturised fluidic systems and non-invasive blood glucose sensors, also require low system cost and small footprint. This thesis investigates new and improved techniques for implementing microwave resonant sensor systems, aiming to enhance their suitability for such demanding tasks. This was achieved through several original contributions: new insights into coupling, dynamics, and statistical properties of sensors; a hardware implementation of a realtime multitone readout system; and the development of efficient signal processing algorithms for the extraction of sensor measurements from resonator response data. The performance of this improved sensor system was verified through a number of novel measurements, achieving a higher sampling rate than the best available technology yet with equivalent accuracy and precision. At the same time, these experiments revealed unforeseen applications in liquid metrology and precision microwave heating of miniature flow systems.EThOS - Electronic Theses Online ServiceGBUnited Kingdo

Microwave resonant sensors

Microwave resonant sensors use the spectral characterisation of a resonator to make high sensitivity measurements of material electromagnetic properties at GHz frequencies. They have been applied to a wide range of industrial and scientific measurements, and used to study a diversity of physical phenomena. Recently, a number of challenging dynamic applications have been developed that require very high speed and high performance, such as kinetic inductance detectors and scanning microwave microscopes. Others, such as sensors for miniaturised fluidic systems and non-invasive blood glucose sensors, also require low system cost and small footprint. This thesis investigates new and improved techniques for implementing microwave resonant sensor systems, aiming to enhance their suitability for such demanding tasks. This was achieved through several original contributions: new insights into coupling, dynamics, and statistical properties of sensors; a hardware implementation of a realtime multitone readout system; and the development of efficient signal processing algorithms for the extraction of sensor measurements from resonator response data. The performance of this improved sensor system was verified through a number of novel measurements, achieving a higher sampling rate than the best available technology yet with equivalent accuracy and precision. At the same time, these experiments revealed unforeseen applications in liquid metrology and precision microwave heating of miniature flow systems