Low-power and high-performance SRAM design in high variability advanced CMOS technology

As process technologies shrink, the size and number of memories on a chip are exponentially increasing. Embedded SRAMs are a critical component in modern digital systems, and they strongly impact the overall power, performance, and area. To promote memory-related research in academia, this dissertation introduces OpenRAM, a flexible, portable and open-source memory compiler and characterization methodology for generating and verifying memory designs across different technologies.In addition, SRAM designs, focusing on improving power consumption, access time and bitcell stability are explored in high variability advanced CMOS technologies. To have a stable read/write operation for SRAM in high variability process nodes, a differential-ended single-port 8T bitcell is proposed that improves the read noise margin, write noise margin and readout bitcell current by 45%, 48% and 21%, respectively, compared to a conventional 6T bitcell. Also, a differential-ended single-port 12T bitcell for subthreshold operation is proposed that solves the half-select disturbance and allows efficient bit-interleaving. 12T bitcell has a leakage control mechanism which helps to reduce the power consumption and provides operation down to 0.3 V. Both 8T and 12T bitcells are analyzed in a 64 kb SRAM array using 32 nm technology. Besides, to further improve the access time and power consumption, two tracking circuits (multi replica bitline delay and reconfigurable replica bitline delay techniques) are proposed to aid the generation of accurate and optimum sense amplifier set time.An error tolerant SRAM architecture suitable for low voltage video application with dynamic power-quality management is also proposed in this dissertation. This memory uses three power supplies to improve the SRAM stability in low voltages. The proposed triple-supply approach achieves 63% improvement in image quality and 69% reduction in power consumption compared to a single-supply 64 kb SRAM array at 0.70 V

A full-custom digital-signal-processing unit for real-time cortical blood flow monitoring

Master'sMASTER OF ENGINEERIN

Embracing Visual Experience and Data Knowledge: Efficient Embedded Memory Design for Big Videos and Deep Learning

Energy efficient memory designs are becoming increasingly important, especially for applications related to mobile video technology and machine learning. The growing popularity of smart phones, tablets and other mobile devices has created an exponential demand for video applications in today?s society. When mobile devices display video, the embedded video memory within the device consumes a large amount of the total system power. This issue has created the need to introduce power-quality tradeoff techniques for enabling good quality video output, while simultaneously enabling power consumption reduction. Similarly, power efficiency issues have arisen within the area of machine learning, especially with applications requiring large and fast computation, such as neural networks. Using the accumulated data knowledge from various machine learning applications, there is now the potential to create more intelligent memory with the capability for optimized trade-off between energy efficiency, area overhead, and classification accuracy on the learning systems. In this dissertation, a review of recently completed works involving video and machine learning memories will be covered. Based on the collected results from a variety of different methods, including: subjective trials, discovered data-mining patterns, software simulations, and hardware power and performance tests, the presented memories provide novel ways to significantly enhance power efficiency for future memory devices. An overview of related works, especially the relevant state-of-the-art research, will be referenced for comparison in order to produce memory design methodologies that exhibit optimal quality, low implementation overhead, and maximum power efficiency.National Science FoundationND EPSCoRCenter for Computationally Assisted Science and Technology (CCAST

CMOS SPAD-based image sensor for single photon counting and time of flight imaging

The facility to capture the arrival of a single photon, is the fundamental limit to the detection of quantised electromagnetic radiation. An image sensor capable of capturing a picture with this ultimate optical and temporal precision is the pinnacle of photo-sensing. The creation of high spatial resolution, single photon sensitive, and time-resolved image sensors in complementary metal oxide semiconductor (CMOS) technology offers numerous benefits in a wide field of applications. These CMOS devices will be suitable to replace high sensitivity charge-coupled device (CCD) technology (electron-multiplied or electron bombarded) with significantly lower cost and comparable performance in low light or high speed scenarios. For example, with temporal resolution in the order of nano and picoseconds, detailed three-dimensional (3D) pictures can be formed by measuring the time of flight (TOF) of a light pulse. High frame rate imaging of single photons can yield new capabilities in super-resolution microscopy. Also, the imaging of quantum effects such as the entanglement of photons may be realised. The goal of this research project is the development of such an image sensor by exploiting single photon avalanche diodes (SPAD) in advanced imaging-specific 130nm front side illuminated (FSI) CMOS technology. SPADs have three key combined advantages over other imaging technologies: single photon sensitivity, picosecond temporal resolution and the facility to be integrated in standard CMOS technology. Analogue techniques are employed to create an efficient and compact imager that is scalable to mega-pixel arrays. A SPAD-based image sensor is described with 320 by 240 pixels at a pitch of 8μm and an optical efficiency or fill-factor of 26.8%. Each pixel comprises a SPAD with a hybrid analogue counting and memory circuit that makes novel use of a low-power charge transfer amplifier. Global shutter single photon counting images are captured. These exhibit photon shot noise limited statistics with unprecedented low input-referred noise at an equivalent of 0.06 electrons. The CMOS image sensor (CIS) trends of shrinking pixels, increasing array sizes, decreasing read noise, fast readout and oversampled image formation are projected towards the formation of binary single photon imagers or quanta image sensors (QIS). In a binary digital image capture mode, the image sensor offers a look-ahead to the properties and performance of future QISs with 20,000 binary frames per second readout with a bit error rate of 1.7 x 10-3. The bit density, or cumulative binary intensity, against exposure performance of this image sensor is in the shape of the famous Hurter and Driffield densitometry curves of photographic film. Oversampled time-gated binary image capture is demonstrated, capturing 3D TOF images with 3.8cm precision in a 60cm range

Cumulative index to NASA Tech Briefs, 1986-1990, volumes 10-14

Tech Briefs are short announcements of new technology derived from the R&D activities of the National Aeronautics and Space Administration. These briefs emphasize information considered likely to be transferrable across industrial, regional, or disciplinary lines and are issued to encourage commercial application. This cumulative index of Tech Briefs contains abstracts and four indexes (subject, personal author, originating center, and Tech Brief number) and covers the period 1986 to 1990. The abstract section is organized by the following subject categories: electronic components and circuits, electronic systems, physical sciences, materials, computer programs, life sciences, mechanics, machinery, fabrication technology, and mathematics and information sciences