A low-power native NMOS-based bandgap reference operating from −55°C to 125°C with Li-Ion battery compatibility

Summary The paper describes the implementation of a bandgap reference based on native-MOSFET transistors for low-power sensor node applications. The circuit can operate from −55°C to 125°C and with a supply voltage ranging from 1.5 to 4.2 V. Therefore, it is compatible with the temperature range of automotive and military-aerospace applications, and for direct Li-Ion battery attach. Moreover, the circuit can operate without any dedicated start-up circuit, thanks to its inherent single operating point. A mathematical model of the reference circuit is presented, allowing simple portability across technology nodes, with current consumption and silicon area as design parameters. Implemented in a 55-nm CMOS technology, the voltage reference achieves a measured average (maximum) temperature coefficient of 28 ppm/°C (43 ppm/°C) and a measured sample-to-sample variation within 57 mV, with a current consumption of 420 nA at 27°C

Design and implementation of a multi-modal sensor with on-chip security

With the advancement of technology, wearable devices for fitness tracking, patient monitoring, diagnosis, and disease prevention are finding ways to be woven into modern world reality. CMOS sensors are known to be compact, with low power consumption, making them an inseparable part of wireless medical applications and Internet of Things (IoT). Digital/semi-digital output, by the translation of transmitting data into the frequency domain, takes advantages of both the analog and digital world. However, one of the most critical measures of communication, security, is ignored and not considered for fabrication of an integrated chip. With the advancement of Moore\u27s law and the possibility of having a higher number of transistors and more complex circuits, the feasibility of having on-chip security measures is drawing more attention. One of the fundamental means of secure communication is real-time encryption. Encryption/ciphering occurs when we encode a signal or data, and prevents unauthorized parties from reading or understanding this information. Encryption is the process of transmitting sensitive data securely and with privacy. This measure of security is essential since in biomedical devices, the attacker/hacker can endanger users of IoT or wearable sensors (e.g. attacks at implanted biosensors can cause fatal harm to the user). This work develops 1) A low power and compact multi-modal sensor that can measure temperature and impedance with a quasi-digital output and 2) a low power on-chip signal cipher for real-time data transfer

A 2.98pJ/conversion 0.0023mm2 Dynamic Temperature Sensor with Fully On-Chip Corrections

Nowadays, many battery-operated SoCs for loT and environmental monitoring applications are equipped with temperature sensors. In these miniaturized systems, power and area are two critical concerns. One challenge for temperature sensors is that they are sensitive to process corners and random mismatch. Generally, a 2-point trim and systematic non-linear error removal are required, especially for resistor-based sensing front-ends with two types of resistors, whose spread is partially uncorrelated [1], [2]. These corrections are done off-chip and digitally in most publications. In particular for low power sensors, they may consume more power and area than the sensor itself when integrated on-chip [3]. This work presents a resistive temperature sensor that integrates on-chip analog offset, gain and non-linearity correction techniques, while keeping state-of-the-art power and size performance. The prototype consumes 2.98pJ/conversion with an area of 0. 0023textmm 2 including all the correction techniques and achieves +0.7/-0.6 circC inaccuracy.</p

Ultra-Low-Power Sensors and Receivers for IoT Applications

The combination of ultra-low power analog front-ends and CMOS-compatible transducers enable new applications, such as environmental monitors, household appliances, health trackers, etc. that are seamlessly integrated into our daily lives. Furthermore, wireless connectivity allows many of these sensors to operate both independently and collectively. These techniques collectively fulfil the recent surge of internet-of-things (IoT) applications that have the potential to fundamentally change daily life for millions of people.In this dissertation, the circuit and system design of wireless receivers and sensors is presented that explores the challenges of implementing long lifespan, high accuracy, and large coverage range IoT sensor networks. The first is a wake-up receiver (WuRX), which continuously monitors the RF environment to wake up a higher-power radio upon detection of a predetermined RF signature. This work both improves sensitivity and reduces power over prior art through a multi-faceted design featuring an impedance transformation network with large passive voltage gain, an active envelope detector with high input impedance to facilitate large passive voltage gain, a low-power precision comparator, and a low-leakage digital baseband correlator.Although pushing the prior WuRX performance boundary by orders of magnitude, the first work shows moderate sensitivity, inferior temperature robustness, and large area with external lumped components. Thus, the second work shows a miniaturized WuRX that is temperature-compensated, yet still consumes only nano-watt power and millimeter area while operating at 9 GHz. To further reduce the area, a global common-mode feedback is utilized across the envelope detector and baseband amplifier that eliminates the need for off-chip ac-coupling components. Multiple temperature-compensation techniques are proposed to maintain constant bandwidth of the signal path and constant clock frequency. Both WuRXs operate at 0.4 V supply, consume near-zero power and achieve ~-70 dBm sensitivity.Lastly, the first reported CMOS 2-in-1 relative humidity and temperature sensor is presented. A unified analog front-end interfaces on-chip transducers and converts the inputs into a frequency vis a high-linearity frequency-locked loop. An incomplete-settling switched-capacitor-based Wheatstone bridge is proposed to sense the inputs in a power-efficient fashion

Ultra-Low Power Circuit Design for Miniaturized IoT Platform

This thesis examines the ultra-low power circuit techniques for mm-scale Internet of Things (IoT) platforms. The IoT devices are known for their small form factors and limited battery capacity and lifespan. So, ultra-low power consumption of always-on blocks is required for the IoT devices that adopt aggressive duty-cycling for high power efficiency and long lifespan. Several problems need to be addressed regarding IoT device designs, such as ultra-low power circuit design techniques for sleep mode and energy-efficient and fast data rate transmission for active mode communication. Therefore, this thesis highlights the ultra-low power always-on systems, focusing on energy efficient optical transmission in order to miniaturize the IoT systems. First, this thesis presents a battery-less sub-nW micro-controller for an always-operating system implemented with a newly proposed logic family. Second, it proposes an always-operating sub-nW light-to-digital converter to measure instant light intensity and cumulative light exposure, which employs the characteristics of this proposed logic family. Third, it presents an ultra-low standby power optical wake-up receiver with ambient light canceling using dual-mode operation. Finally, an energy-efficient low power optical transmitter for an implantable IoT device is suggested. Implications for future research are also provided.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/145862/1/imhotep_1.pd

Current-mode processing based Temperature-to-Digital Converters for MEMS applications

This thesis presents novel Temperature-to-Digital Converters (TDCs) designed and fabricated in CMOS technology. These integrated smart temperature sensing circuits are widely employed in the Micro-Electro-Mechanical Systems (MEMS) field in order to mitigate the impact of the ambient temperature on their performance. In this framework, the increasingly stringent demands of the market have led the cost-effectiveness specification of these compensation solutions to an higher and higher level, directly translating into the requirement of more and more compact designs (< 0.1 mm²); in addition to this, considering that the great majority of the systems whose thermal drift needs to be compensated is battery supplied, ultra-low energy-per-conversion (< 10 nJ) is another requirement of primary importance. This thesis provides a detailed description of two different test-chips (mas fuerte and es posible) that have been designed with this orientation and that are the result of three years of research activity; for both devices, the conception, design, layout and testing phases are all described in detail and are supported by simulation and measurement results.This thesis presents novel Temperature-to-Digital Converters (TDCs) designed and fabricated in CMOS technology. These integrated smart temperature sensing circuits are widely employed in the Micro-Electro-Mechanical Systems (MEMS) field in order to mitigate the impact of the ambient temperature on their performance. In this framework, the increasingly stringent demands of the market have led the cost-effectiveness specification of these compensation solutions to an higher and higher level, directly translating into the requirement of more and more compact designs (< 0.1 mm²); in addition to this, considering that the great majority of the systems whose thermal drift needs to be compensated is battery supplied, ultra-low energy-per-conversion (< 10 nJ) is another requirement of primary importance. This thesis provides a detailed description of two different test-chips (mas fuerte and es posible) that have been designed with this orientation and that are the result of three years of research activity; for both devices, the conception, design, layout and testing phases are all described in detail and are supported by simulation and measurement results

Arrayable Voltage-Controlled Ring-Oscillator for Direct Time-of-Flight Image Sensors

Direct time-of-flight (d-ToF) estimation with high frame rate requires the incorporation of a time-to-digital converter (TDC) at pixel level. A feasible approach to a compact implementation of the TDC is to use the multiple phases of a voltage-controlled ring-oscillator (VCRO) for the finest bits. The VCRO becomes central in determining the performance parameters of a d-ToF image sensor. In this paper, we are covering the modeling, design, and measurement of a CMOS pseudo-differential VCRO. The oscillation frequency, the jitter due to mismatches and noise and the power consumption are analytically evaluated. This design has been incorporated into a 64x64-pixel array. It has been fabricated in a 0.18 mu m standard CMOS technology. Occupation area is 28x29 mu m(2) and power consumption is 1.17 mW at 850 MHz. The measured gain of the VCRO is of 477 MHz/V with a frequency tuning range of 53%. Moreover, it features a linearity of 99.4% over a wide range of control frequencies, namely, from 400 to 850 MHz. The phase noise is of -102 dBc/Hz at 2 MHz offset frequency from 850 MHz. The influence of these parameters in the performance of the TDC has been measured. The minimum time bin of the TDC is 147 ps with a rms DNL/INL of 0.13/1.7LSB.Office of Naval Research (USA) N000141410355Ministerio de Economía y Competitividad TEC2015-66878-C3-1-RJunta de Andalucía P12-TIC 233

Variability-aware design of CMOS nanopower reference circuits

Questo lavoro è inserito nell'ambito della progettazione di circuiti microelettronici analogici con l'uso di tecnologie scalate, per le quali ha sempre maggiore importanza il problema della sensibilità delle grandezze alle variazioni di processo. Viene affrontata la progettazione di generatori di quantità di riferimento molto precisi, basati sull’uso di dispositivi che sono disponibili anche in tecnologie CMOS standard e che sono “intrinsecamente” più robusti rispetto alle variazioni di processo. Questo ha permesso di ottenere una bassa sensibilità al processo insieme ad un consumo di potenza estremamente ridotto, con il principale svantaggio di una elevata occupazione di area. Tutti i risultati sono stati ottenuti in una tecnologia 0.18μm CMOS. In particolare, abbiamo progettato un riferimento di tensione, ottenendo una deviazione standard relativa della tensione di riferimento dello 0.18% e un consumo di potenza inferiore a 70 nW, sulla base di misure su un set di 20 campioni di un singolo batch. Sono anche disponibili risultati relativi alla variabilità inter batch, che mostrano una deviazione standard relativa cumulativa della tensione di riferimento dello 0.35%. Abbiamo quindi progettato un riferimento di corrente, ottenendo anche in questo caso una sensibilità al processo della corrente di riferimento dell’1.4% con un consumo di potenza inferiore a 300 nW (questi sono risultati sperimentali ottenuti dalle misure su 20 campioni di un singolo batch). I riferimenti di tensione e di corrente proposti sono stati quindi utilizzati per la progettazione di un oscillatore a rilassamento a bassa frequenza, che unisce una ridotta sensibilità al processo, inferiore al 2%, con un basso consumo di potenza, circa 300 nW, ottenuto sulla base di simulazioni circuitali. Infine, nella progettazione dei blocchi sopra menzionati, abbiamo applicato un metodo per la determinazione della stabilità dei punti di riposo, basato sull’uso dei CAD standard utilizzati per la progettazione microelettronica. Questo approccio ci ha permesso di determinare la stabilità dei punti di riposo desiderati, e ci ha anche permesso di stabilire che i circuiti di start up spesso non sono necessari

Design and debugging of multi-step analog to digital converters

With the fast advancement of CMOS fabrication technology, more and more signal-processing functions are implemented in the digital domain for a lower cost, lower power consumption, higher yield, and higher re-configurability. The trend of increasing integration level for integrated circuits has forced the A/D converter interface to reside on the same silicon in complex mixed-signal ICs containing mostly digital blocks for DSP and control. However, specifications of the converters in various applications emphasize high dynamic range and low spurious spectral performance. It is nontrivial to achieve this level of linearity in a monolithic environment where post-fabrication component trimming or calibration is cumbersome to implement for certain applications or/and for cost and manufacturability reasons. Additionally, as CMOS integrated circuits are accomplishing unprecedented integration levels, potential problems associated with device scaling – the short-channel effects – are also looming large as technology strides into the deep-submicron regime. The A/D conversion process involves sampling the applied analog input signal and quantizing it to its digital representation by comparing it to reference voltages before further signal processing in subsequent digital systems. Depending on how these functions are combined, different A/D converter architectures can be implemented with different requirements on each function. Practical realizations show the trend that to a first order, converter power is directly proportional to sampling rate. However, power dissipation required becomes nonlinear as the speed capabilities of a process technology are pushed to the limit. Pipeline and two-step/multi-step converters tend to be the most efficient at achieving a given resolution and sampling rate specification. This thesis is in a sense unique work as it covers the whole spectrum of design, test, debugging and calibration of multi-step A/D converters; it incorporates development of circuit techniques and algorithms to enhance the resolution and attainable sample rate of an A/D converter and to enhance testing and debugging potential to detect errors dynamically, to isolate and confine faults, and to recover and compensate for the errors continuously. The power proficiency for high resolution of multi-step converter by combining parallelism and calibration and exploiting low-voltage circuit techniques is demonstrated with a 1.8 V, 12-bit, 80 MS/s, 100 mW analog to-digital converter fabricated in five-metal layers 0.18-µm CMOS process. Lower power supply voltages significantly reduce noise margins and increase variations in process, device and design parameters. Consequently, it is steadily more difficult to control the fabrication process precisely enough to maintain uniformity. Microscopic particles present in the manufacturing environment and slight variations in the parameters of manufacturing steps can all lead to the geometrical and electrical properties of an IC to deviate from those generated at the end of the design process. Those defects can cause various types of malfunctioning, depending on the IC topology and the nature of the defect. To relive the burden placed on IC design and manufacturing originated with ever-increasing costs associated with testing and debugging of complex mixed-signal electronic systems, several circuit techniques and algorithms are developed and incorporated in proposed ATPG, DfT and BIST methodologies. Process variation cannot be solved by improving manufacturing tolerances; variability must be reduced by new device technology or managed by design in order for scaling to continue. Similarly, within-die performance variation also imposes new challenges for test methods. With the use of dedicated sensors, which exploit knowledge of the circuit structure and the specific defect mechanisms, the method described in this thesis facilitates early and fast identification of excessive process parameter variation effects. The expectation-maximization algorithm makes the estimation problem more tractable and also yields good estimates of the parameters for small sample sizes. To allow the test guidance with the information obtained through monitoring process variations implemented adjusted support vector machine classifier simultaneously minimize the empirical classification error and maximize the geometric margin. On a positive note, the use of digital enhancing calibration techniques reduces the need for expensive technologies with special fabrication steps. Indeed, the extra cost of digital processing is normally affordable as the use of submicron mixed signal technologies allows for efficient usage of silicon area even for relatively complex algorithms. Employed adaptive filtering algorithm for error estimation offers the small number of operations per iteration and does not require correlation function calculation nor matrix inversions. The presented foreground calibration algorithm does not need any dedicated test signal and does not require a part of the conversion time. It works continuously and with every signal applied to the A/D converter. The feasibility of the method for on-line and off-line debugging and calibration has been verified by experimental measurements from the silicon prototype fabricated in standard single poly, six metal 0.09-µm CMOS process