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High Mobility Flexible Graphene Field-Effect Transistors with Self-Healing Gate Dielectrics

By Chun-Chieh Lu (1775827), Yung-Chang Lin (636527), Chao-Hui Yeh (1477687), Ju-Chun Huang (2081911) and Po-Wen Chiu (1477678)

Abstract

A high-mobility low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible plastic substrate using high-capacitance natural aluminum oxide as a gate dielectric in a self-aligned device configuration. The high capacitance of the native aluminum oxide and the self-alignment, which minimizes access resistance, yield a high current on/off ratio and an operation voltage below 3 V, along with high electron and hole mobility of 230 and 300 cm<sup>2</sup>/V·s, respectively. Moreover, the native aluminum oxide is resistant to mechanical bending and exhibits self-healing upon electrical breakdown. These results indicate that self-aligned graphene FETs can provide remarkably improved device performance and stability for a range of applications in flexible electronics

Topics: Biophysics, Biotechnology, Sociology, Information Systems not elsewhere classified, graphene, FET, device, aluminum oxide
Year: 2012
DOI identifier: 10.1021/nn301199j.s001
OAI identifier: oai:figshare.com:article/2520949
Provided by: FigShare
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