Statistical switching kinetics in ferroelectrics

By assuming a more realistic nucleation and polarization reversal scenario we build a new statistical switching model for ferroelectrics, which is different from either the Kolmogorov-Avrami-Ishibashi (KAI) model or the Nucleation-Limited-Switching (NLS) model. After incorporating a time-dependent depolarization field this model gives a good description about the retardation behavior in polycrystalline thin films at medium or low fields, which can not be described by the traditional KAI model. This model predicts correctly n=1 for polycrystalline thin films at high Eappl or ceramic bulks in the ideal case

Resistive Switching in Memristive Electrochemical Metallization Devices

We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system. The ion transport model is consistently coupled with solvers for the electric field and thermal diffusion. We show that the model is able to describe not only the formation of conducting filaments but also its dissolution. Furthermore, we calculate realistic current-voltage characteristics and resistive switching kinetics. Finally, we discuss in detail the influence of both the electric field and the local heat on the switching processes of the device

Polarization switching at the nanoscale in ferroelectric copolymer thin films

The polarization switching kinetics were measured at the nanoscale in continuous thin films of a ferroelectric copolymer of vinylidene fluoride and trifluoroethylene. The dependence of the switching rate on voltage for a 54-nm thick film exhibits extrinsic nucleation and domain-growth type kinetics with no true threshold coercive field, and is qualitatively different from the behavior of an 18-nm thick film, which exhibits intrinsic switching kinetics, and a true threshold field. The results are consistent with studies of thin film capacitors of much larger area and with a recent refinement of the theory of the critical size for intrinsic switching

Unifying thermodynamic and kinetic descriptions of single-molecule processes: RNA unfolding under tension

We use mesoscopic non-equilibrium thermodynamics theory to describe RNA unfolding under tension. The theory introduces reaction coordinates, characterizing a continuum of states for each bond in the molecule. The unfolding considered is so slow that one can assume local equilibrium in the space of the reaction coordinates. In the quasi-stationary limit of high sequential barriers, our theory yields the master equation of a recently proposed sequential-step model. Non-linear switching kinetics is found between open and closed states. Our theory unifies the thermodynamic and kinetic descriptions and offers a systematic procedure to characterize the dynamics of the unfolding processComment: 13 pages, 3 figure

Switching kinetics of ferroelectric polymer nanomesas

The switching dynamics and switching time of ferroelectric nanomesas grown from the paraelectric phase of ultrathin Langmuir–Blodgett vinylidene fluoride and trifluoroethylene copolymer films are investigated. Ferroelectric nanomesas are created through heat treatment and self-organization and have an average height of 10 nm and an average diameter of 100 nm. Ferroelectric nanomesas are highly crystalline and are in the ferroelectric phase and switch faster than 50 μs. The dependence of switching time on applied voltage implies an extrinsic switching nature

Switching kinetics of ferroelectric polymer nanomesas

The switching dynamics and switching time of ferroelectric nanomesas grown from the paraelectric phase of ultrathin Langmuir–Blodgett vinylidene fluoride and trifluoroethylene copolymer films are investigated. Ferroelectric nanomesas are created through heat treatment and self-organization and have an average height of 10 nm and an average diameter of 100 nm. Ferroelectric nanomesas are highly crystalline and are in the ferroelectric phase and switch faster than 50 μs. The dependence of switching time on applied voltage implies an extrinsic switching nature