Comparative study of the MASH digital delta-sigma modulators

The paper focuses on the Multi-stAge noise SHaping (MASH) digital delta-sigma modulator (DDSM) that employs multi-moduli (MM-MASH). Different architectures of the MASH DDSM are compared. In particular, it is proven that a higherorder error feedback modulator (EFM) has the same sequence length as a first-order EFM (EFM1) in an MM-MASH. In addition, the method that is required to setup the quantisation moduli of the MM-MASH is introduced. The theory is validated by simulation

Application of the effective Fisher matrix to the frequency domain inspiral waveforms

The Fisher matrix (FM) has been generally used to predict the accuracy of the gravitational wave parameter estimation. Although a limitation of the FM has been well known, it is still mainly used due to its very low computational cost compared to the Monte Carlo simulations. Recently, Rodriguez et al. [Phys. Rev. D 88, 084013 (2013)] performed Markov chain Monte Carlo (MCMC) simulations for nonspinning binary systems with total masses $M \leq 20 M_{\odot}$, they found systematic differences between the predictions from FM and MCMC for $M>10 M_{\odot}$. On the other hand, an effective Fisher matrix (eFM) was recently introduced by Cho et al. [Phys. Rev. D 87, 24004 (2013)]. The eFM is a semi-analytic approach to the standard FM, in which the partial derivative is taken by a quadratic fitting function to the local overlap surface. In this work, we apply the eFM method to several nonspinning binary systems and find that the error bounds in eFM are qualitatively in good agreement with the MCMC results of Rodriguez et al. in all mass regions. In particular, we provide concrete examples showing an importance of taking into account the template-dependent frequency cutoff of the inspiral waveforms.Comment: 13 pages, 5figures; final version accepted for publication in CQG; changed significantly from v

Nanodielectric mapping of a model polystyrene-poly(vinyl acetate) blend by electrostatic force microscopy

We present a simple method to quantitatively image the dielectric permittivity of soft materials at nanoscale using electrostatic force microscopy (EFM) by means of the double pass method. The EFM experiments are based on the measurement of the frequency shifts of the oscillating tip biased at two different voltages. A numerical treatment based on the equivalent charge method allows extracting the values of the dielectric permittivity at each image point. This method can be applied with no restrictions of film thickness and tip radius. This method has been applied to image the morphology and the nanodielectric properties of a model polymer blend of polystyrene and poly(vinyl acetate)

Scanned Probe Microscopy of Electronic Transport in Carbon Nanotubes

We use electrostatic force microscopy and scanned gate microscopy to probe the conducting properties of carbon nanotubes at room temperature. Multi-walled carbon nanotubes are shown to be diffusive conductors, while metallic single-walled carbon nanotubes are ballistic conductors over micron lengths. Semiconducting single-walled carbon nanotubes are shown to have a series of large barriers to conduction along their length. These measurements are also used to probe the contact resistance and locate breaks in carbon nanotube circuits.Comment: 4 page

Dielectric properties of thin insulating layers measured by Electrostatic Force Microscopy

In order to measure the dielectric permittivity of thin insulting layers, we developed a method based on electrostatic force microscopy (EFM) experiments coupled with numerical simulations. This method allows to characterize the dielectric properties of materials without any restrictions of film thickness, tip radius and tip-sample distance. The EFM experiments consist in the detection of the electric force gradient by means of a double pass method. The numerical simulations, based on the equivalent charge method (ECM), model the electric force gradient between an EFM tip and a sample, and thus, determine from the EFM experiments the relative dielectric permittivity by an inverse approach. This method was validated on a thin SiO2 sample and was used to characterize the dielectric permittivity of ultrathin poly(vinyl acetate) and polystyrene films at two temperatures

First principles investigation of transition-metal doped group-IV semiconductors: Rx{_x}Y1−x_{1-x} (R=Cr, Mn, Fe; Y=Si, Ge)

A number of transition-metal (TM) doped group-IV semiconductors, R$_{x}$Y$_{1-x}$ (R=Cr, Mn and Fe; Y=Si, Ge), have been studied by the first principles calculations. The obtained results show that antiferromagnetic (AFM) order is energetically more favored than ferromagnetic (FM) order in Cr-doped Ge and Si with $x$=0.03125 and 0.0625. In 6.25% Fe-doped Ge, FM interaction dominates in all range of the R-R distances while for Fe-doped Ge at 3.125% and Fe-doped Si at both concentrations of 3.125% and 6.25%, only in a short R-R range can the FM states exist. In the Mn-doped case, the RKKY-like mechanism seems to be suitable for the Ge host matrix, while for the Mn-doped Si, the short-range AFM interaction competes with the long-range FM interaction. The different origin of the magnetic orders in these diluted magnetic semiconductors (DMSs) makes the microscopic mechanism of the ferromagnetism in the DMSs more complex and attractive.Comment: 14 pages, 2 figures, 6 table

Photoluminescence spectrum of an interacting two-dimensional electron gas at \nu=1

We report on the theoretical photoluminescence spectrum of the interacting two-dimensional electron gas at filling factor one (\nu=1). We considered a model similar to the one adopted to study the X-ray spectra of metals and solved it analytically using the bosonization method previously developed for the two-dimensional electron gas at \nu=1. We calculated the emission spectra of the right and the left circularly polarized radiations for the situations where the distance between the two-dimensional electron gas and the valence band hole are smaller and greater than the magnetic length. For the former, we showed that the polarized photoluminescence spectra can be understood as the recombination of the so-called excitonic state with the valence band hole whereas, for the latter, the observed emission spectra can be related to the recombination of a state formed by a spin down electron bound to n spin waves. This state seems to be a good description for the quantum Hall skyrmion.Comment: Revised version, 10 pages, 5 figures, accepted to Phys. Rev.