Quantum well heterostructures grown by molecular beam epitaxy on silicon-on-gallium arsenide substrates

Silicon-on-gallium arsenide ~SonG! wafers have recently been proposed as optimal substrates for monolithic integration of GaAs-based optoelectronic devices with silicon electronics. In this letter it is demonstrated that high quality quantum well heterostructures can be grown on SonG substrates under conditions consistent with the survival of pre-existing electronics. Photoluminescence and cathodoluminescence measurements confirm that these layers are sufficiently high quality to allow integration of light emitting and laser diodes on SonG substrates.This work was supported by the U.S. Army Research Office through Contract No. DAAG55-98-1- 0320Peer reviewe