Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires

The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. To reveal the surface controlled sensing mechanism, intentional lattice oxygen defects are created on the surfaces of GaN nanowires for the elucidation of charge transfer process in methane (CH4) sensing. Experimental and simulation results of electron energy loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the possible presence of 2(ON) and VGa-3ON defect complexes. A global resistive response for sensor devices of ensemble nanowires and a localized charge transfer process in single GaN nanowires are studied in situ scanning by Kelvin probe microscopy (SKPM). A localized charge transfer process, involving the VGa-3ON defect complex on nanowire surface is attributed in controlling the global gas sensing behavior of the oxygen rich ensemble GaN nanowires.Comment: 42 pages, 6 figures, Journa

Factorization of quantum charge transport for non-interacting fermions

We show that the statistics of the charge transfer of non-interacting fermions through a two-lead contact is generalized binomial, at any temperature and for any form of the scattering matrix: an arbitrary charge-transfer process can be decomposed into independent single-particle events. This result generalizes previous studies of adiabatic pumping at zero temperature and of transport induced by bias voltage.Comment: 13 pages, 3 figures, typos corrected, references adde

Four Body Charge Transfer Process in Proton Helium Collision

Recent advancements in experimental techniques now allow for the study of fully differential cross sections for 4-body collisions. Theoretical fully differential cross sections will be presented and compared with absolute experimental data for transfer-excitation in proton-helium collisions. The role of different scattering mechanism will be discussed

The electrode resistance of ZrO2---Y2O3(-Bi2O3) solid electrolytes with Pt electrodes

The electrode resistance (Re1) at low over-voltages has been determined for Bi2O3 free and Bi2O3 doped yttria-stabilized zirconia with sputtered platinum electrodes. The anode and cathode resistances are measured separately and are equal. Bi2O3 causes a decrease of the electrode resistance at small overvoltage and with 5 × 10−4 < PO2 less-than-or-equals, slant 1 atm. The rate determining step for the electrode reaction under the measuring conditions probably is a charge-transfer process in which oxygen adsorbs dissociatively on the bismuth free and associatively on the bismuth doped samples. The complex impedance behaviour of the electrode reaction can be interpreted in terms of R-C circuits in the PO2 range of 10−2−1 atm

Charge transfer in buried-channel charge-coupled devices

A detailed numerical simulation of the charge-transfer process in buried-channel CCDs will be presented. The limitations on the device performance due to incomplete free charge transfer, device parameters and clocking waveforms will be discussed