Systematic Control of Carrier Doping without Disorder at Interface of Oxide Heterostructures

We propose a method to systematically control carrier densities at the interface of transition-metal oxide heterostructures without introducing disorders. By inserting non-polar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control the total carrier densities per unit cell systematically up to high values of the order unity.Comment: 8 pages, 9 figure

Results of a 0.03- scale aerodynamic characteristics investigation of Boeing 747 carrier (model no. AX 1319 I-1) mated with a space shuttle orbiter (model 45-0) conducted in the Boeing transonic wind tunnel (CA5), volume 1

The performance, stability, and control characteristics of various carrier aircraft configurations are presented. Aerodynamic characteristics of the carrier mated with the Orbiter, carrier alone, and Orbiter alone were investigated. Carrier support system tare and interference effects were determined. Six-component force and moment data were recorded for the carrier and Orbiter. Buffet onset characteristics of the carrier vertical tail and horizontal tail were recorded. Angles of attack from -3 deg through 26 deg and angles of slideslip between +12 deg and -12 deg were investigated at Mach numbers from 0.15 through 0.70. Photographs are included

Carrier population control and surface passivation in solar cells

Controlling the concentration of charge carriers near the surface is essential for solar cells. It permits to form regions with selective conductivity for either electrons or holes and it also helps to reduce the rate at which they recombine. Chemical passivation of the surfaces is equally important, and it can be combined with population control to implement carrier-selective, passivating contacts for solar cells. This paper discusses different approaches to suppress surface recombination and to manipulate the concentration of carriers by means of doping, work function and charge. It also describes some of the many surface-passivating contacts that are being developed for silicon solar cells, restricted to experiments performed by the authors.Funding from the Australian Government via ARENA (project RND003), ACAP (project on "Passivated contacts") and the ARC (DP150104331) is gratefully acknowledged

Discriminator aided phase lock acquisition for suppressed carrier signals

A discriminator aided technique for acquisition of phase lock to a suppressed carrier signal utilizes a Costas loop which is initially operated open loop and control voltage for its VCXO is derived from a phase detector that compares the VCXO to a reference frequency thus establishing coarse frequency resolution with the received signal. Then the Costas loop is closed with the low-pass filter of the channel having a bandwidth much greater (by a factor of about 10) than in the I channel so that a frequency discriminator effect results to aid carrier resolution. Finally, after carrier acquisition, the Q-channel filter of the Costas loop is switched to a bandwidth substantially equal to that of the I-channel for carrier tracking

Tuning of metal-insulator transition of two-dimensional electrons at parylene/SrTiO3_3 interface by electric field

Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal transition (IMT) in a two dimensional (2D) electron gas at the interface of insulating SrTiO$_3$ single crystals. Superconductivity was observed in a limited number of devices doped far beyond the IMT, which may imply the presence of 2D metal-superconductor transition. This realization of a two-dimensional metallic state on the most widely-used perovskite oxide is the best manifestation of the potential of oxide electronics