Storage capabilities of a 4-junction single electron trap with an on-chip resistor

We report on the operation of a single electron trap comprising a chain of four Al/AlOx/Al tunnel junctions attached, at one side, to a memory island and, at the other side, to a miniature on-chip Cr resistor R=50 kOhm which served to suppress cotunneling. At appropriate voltage bias the bi-stable states of the trap, with the charges differing by the elementary charge e, were realized. At low temperature, spontaneous switching between these states was found to be infrequent. For instance, at T=70 mK the system was capable of holding an electron for more than 2 hours, this time being limited by the time of the measurement.Comment: 3 pages of text and 2 figure

Single-charge escape processes through a hybrid turnstile in a dissipative environment

We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, t ~ 2-20s, in our two-junction circuit are comparable with those of typical multi-junction, N >= 4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology.Comment: Submitted to New Journal of Physics 201

Pumping properties of the hybrid single-electron transistor in dissipative environment

Pumping characteristics were studied of the hybrid normal-metal/superconductor single-electron transistor embedded in a high-ohmic environment. Two 3 micrometer-long microstrip resistors of CrOx with a sum resistance R=80kOhm were placed adjacent to this hybrid device. Substantial improvement of pumping and reduction of the subgap leakage were observed in the low-MHz range. At higher frequencies 0.1-1GHz, a slowdown of tunneling due to the enhanced damping and electron heating negatively affected the pumping, as compared to the reference bare devices.Comment: 3 pages 4 figure

Two-junction superconductor-normal metal single-electron trap in a combined on-chip RC environment

Dissipative properties of the electromagnetic environment as well as on-chip RC filtering are shown to suppress random state switchings in the two-junction superconductor(S) - normal metal(N) electron trap. In our experiments, a local high-ohmic resistor increased the hold time of the trap by up to two orders of magnitude. A strong effect of on-chip noise filtering was observed for different on-chip geometries. The obtained results are promising for realization of the current standard on the basis of the S-N hybrid turnstile.Comment: 4 pages 3 figures LT2

Radio-frequency Bloch-transistor electrometer

A quantum-limited electrometer based on charge modulation of the Josephson supercurrent in the Bloch transistor inserted into a superconducting ring is proposed. As this ring is inductive coupled to a high-Q resonance tank circuit, the variations of the charge on the transistor island (input signal) are converted into variations of amplitude and phase of radio-frequency oscillations in the tank. These variations are amplified and then detected. The output noise, the back-action fluctuations and their cross-correlation are computed. It is shown that our device enables measurements of the charge with a sensitivity which is determined by the energy resolution of its amplifier, that can be reduced down to the standard quantum limit of \hbar/2. On the basis of this setup a "back-action-evading" scheme of the charge measurements is proposed.Comment: 5 pages incl. 2 figure

Long hold times in a two-junction electron trap

The hold time $\tau$ of a single-electron trap is shown to increase significantly due to suppression of environmentally assisted tunneling events. Using two rf-tight radiation shields instead of a single one, we demonstrate increase of $\tau$ by a factor exceeding $10^3$, up to about 10 hours, for a trap with only two superconductor (S) -- normal-metal (N) tunnel junctions and an on-chip resistor $R$ (R-SNS structure). In the normal state, the improved shielding made it possible to observe $\tau\sim$ 100 s, which is in reasonable agreement with the quantum-leakage-limited level expected for the two-electron cotunneling process.Comment: 4 pages, 3 figure

Metallic single-electron transistor without traditional tunnel barriers

We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel junctions of traditional SETs. Our transistor with a total asymptotic resistance of 110 kOhm showed a very sharp Coulomb blockade and reproducible, deep and strictly e-periodic gate modulation in wide ranges of bias currents I and gate voltages V_g. In the Coulomb blockade region (|V| < 0.5 mV), we observed a strong suppression of the cotunneling current allowing appreciable modulation curves V-V_g to be measured at currents I as low as 100 fA. The noise figure of our SET was found to be similar to that of typical Al/AlOx/Al single-electron transistors.Comment: 5 pages incl. 4 fig

Josephson charge-phase qubit with radio frequency readout: coupling and decoherence

The charge-phase Josephson qubit based on a superconducting single charge transistor inserted in a low-inductance superconducting loop is considered. The loop is inductively coupled to a radio-frequency driven tank circuit enabling the readout of the qubit states by measuring the effective Josephson inductance of the transistor. The effect of qubit dephasing and relaxation due to electric and magnetic control lines as well as the measuring system is evaluated. Recommendations for operation of the qubit in magic points producing minimum decoherence are given.Comment: 11 pages incl. 6 fig