THE STRUCTURE AND THE GAS SENSETIVE PROPERTIES OF THE THIN FILMS OF ZINC OXIDE

The films were taken by the ion-beans method sputtering. It was shown that the samples have constant crystal structure and have good gas sensivity.Работа выполнена при поддержке Министерства образования и науки в рамках проектной части государственного задания

THE STRUCTURE AND THE ELECTRICAL PROPERTIES OF MULTILAYER SYSTEM In2O3-C

The films were taken by the ion-beans method sputtering. It is shown that the film In2O3-C has an X-ray amorphous structure with embedded In2O3 nanocrystallites. The films have a high gas sensitivity to hydrogen.Работа выполнена при поддержке Министерства образования и науки в рамках проектной части государственного задания (3.1867.2017/4.6)

INFLUENCE OF AMORPHOUS CARBON ON THE STRUCTURE AND ELECTRICAL PROPERTIES OF (ZnO/С)81 THIN FILMS

(ZnO/C)81 thin films was prepared by ion beam sputtering. Analysis of the structure for resulting thin films showed that the ZnO layers are in the nanocrystalline state, and the carbon layers are in amorphous state. By adding amorphous carbon, the process of recrystallization in (ZnO/C)81 thin films was reduced in comparison with ZnO films (grain size increase).Работа выполнена при поддержке Министерства образования и науки в рамках проектной части государственного задания (проект № 3.1867.2017/4.6)

THE STRUCTURE AND THE ELECTRICAL PROPERTIES OF HETEROGENEOUS NANOSYSTEMS BASED ON ZnO AND SnO2 OXIDE SEMICONDUCTORS

The effect of heat treatment on the structure and the electrical properties of ZnO/SnO2 multilayer thin-film systems studied. It was found that the films have a layered structure that is stable up to 400°C. After annealing at 400°C and 600°C Mott variable range hopping con-duction mechanism observed.Работа выполнена при поддержке Министерства науки и высшего образования РФ в рамках государственного задания (проект № FZGM-2020-0007)

Conduction Mechanisms in the Thin Film Structure [(Co40Fe40B20)34(SiO2)66/ZnO]112

The paper presents the results of analysis of the mechanisms of electrotransport in thin-film multilayer structures [(Co40Fe40B20)34(SiO2)66/ZnO]112 in the temperature range 77-300 K.Работа выполнена при поддержке гранта Президента Российской Федерации для государственной поддержки молодых российских ученых - кандидатов наук МК-4296.2022.1.

OPTICAL PROPERTIES OF (In2O3/SiO2)25 MULTILAYER STRUCTURES

(In2O3/SiO2)25 multilayer structures were obtained by ion-beam sputtering. The structure of (In2O3/SiO2)25 thin films are amorphous. Multilayer structures have high transparency and low electrical resistance, which makes them a promising material for transparent electronics.Работа была выполнена при поддержке государственного задания (№ FZGM-2020-0007)

THE ELECTRICAL PROPERTIES OF THE MULTILAYER SYSTEM [(Co40Fe40B20)34(SiO2)66/ZnO]112

It was shown that the change in the electrical resistivity of [(Co40Fe40B20)34(SiO2)66/ZnO]112 films from their thickness is associated with the formation of a multilayer structure and a decrease in the specific number of conductive interface regions with increasing film thickness.Работа была выполнена при поддержке РФФИ (проект № 19-48-360010)

INFLUENCE OF SYNTHESIS CONDITIONS ON THE OPTICAL PROPERTIES OF THE ZNO-C THIN FILM SYSTEM

The optical properties of ZnO-С thin film system prepared by ion-beam sputtering has been investigated. The addition of carbon in synthesis process leads to a decrease in the trans-parency of the film by almost 2 times. The results of calculating the band gap for the obtained samples are presented.Работа была выполнена при поддержке РФФИ (проект № 19-48-360010)