Reversible optical doping of graphene

The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of graphene exfoliated on a SiO$_2$/Si substrate can be finely and reversibly tuned between electron and hole doping with visible photons. This photo-induced doping happens under moderate laser power conditions but is significantly affected by the substrate cleaning method. In particular, it is found to require hydrophilic substrates and to vanish in suspended graphene. These findings suggest that optically gated graphene devices operating with a sub-second time scale can be envisioned but also that Raman spectroscopy is not always as non-invasive as generally assumed

Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling

The so-called buffer layer (BL) is a carbon rich reconstructed layer formed during the sublimation of SiC (0001). The existence of covalent bonds between some of the carbon atoms in this layer and the underlying silicon atoms makes it different from epitaxial graphene. We report a systematical and statistical investigation of the BL signature and its coupling with epitaxial graphene by Raman spectroscopy. Three different kinds of BLs are studied: bare buffer layer obtained by direct growth (BL 0), interfacial buffer layer situated between graphene and SiC (c-BL 1) and the interfacial buffer layer without graphene above (u-BL 1). To obtain the latter, we develop a mechanical exfoliation of graphene by depositing and subsequently removing an epoxy-based resin or nickel layer. The observed BLs are ordered-like on the whole BL growth temperature range. BL 0 Raman signature may vary from sample to sample but also forms patches on the same terrace. u-BL 1 share similar properties with BL 0 , albeit with more variability. These BLs have a strikingly larger overall intensity than BL with graphene on top. The signal onset on the high frequency side upshifts upon graphene coverage, that cannot be explained by a simple strain effect. Two fine peaks situated at 1235 and 1360 cm-1 are present for epitaxial monolayer while absent for BL and transferred graphene. These findings point to a coupling between graphene and BL

Synthese, caracterisation et etudes physiques des fullerenes C60 et C70 et de leurs derives

SIGLEAvailable from INIST (FR), Document Supply Service, under shelf-number : T 82538 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc

Synthèse et propriétés physiques de nanotubes de carbone monofeuillets individuels

MONTPELLIER-BU Sciences (341722106) / SudocSudocFranceF

Resonant Raman Excitation Profiles On Individual Carbon Nanotubes of Known Absolute Optical Absorption Spectra

Recently, we determined using spatial modulation spectroscopy, over a broad optical spectral range, the spectrum and amplitude of the absorption cross-section of individual semiconducting single-wall carbon nanotubes. Here, we will present resonant Raman excitation profiles (REP) of radial breathing modes and G modes measured on the same SWNTs. The transition energies and full width at half-maximum (FWHM) obtained using both measurements techniques will be compared to discuss the different models commonly used to fit REP as illustrated on Figure 1. Furthermore, interference effects on Raman intensity will also be evidenced in the case of two energetically close optical transitions. Finally, some recent results obtained on other systems (SWNTs homogeneous dimer and double-walled carbon nanotubes) will be briefly reported

Probing the Intrinsic Vibrational and Optical Properties ofIndividual Chirality-Identified Carbon Nanotubes by Raman Spectroscopy

International audienceThe goal of this chapter is to review the main information derived from Raman spectroscopy on individual suspended (free-standing) chiralityidentified single-wall carbon nanotubes (SWCNTs) and double-wall carbonnanotubes (DWCNTs) with a special focus on the characteristics of their radial breathing modes and G modes, including their resonance conditions. ForSWCNTs, the different relationships between the radial breathing mode frequency and the inverse of the diameter illustrate the high sensitivity of individual suspended SWCNTs to their environmental conditions. The intrinsicprofiles of the optical longitudinal (LO) and transverse (TO) G modes are unambiguously identified both for metallic and semiconducting chiral and achiral SWCNTs, and the diameter dependence of the LO and TO frequencies are established. In DWCNTs, the intertube coupling, originating from the van der Waals interaction between the inner and outer tubes, plays an important role in determining the features/characteristics of the collectiveradial breathing-like modes and G modes

Growth and physical properties of individual single-walled carbon nanotubes.

Growth and physical properties of individual single-walled carbon nanotubes

Electronic properties of hybrid van der Waals heterostructures transistor

International audienceToday, most of electronic devices are based on heterostructures made by molecular beam epitaxy. The impact of van der Waals heterostructures made of 2D materials, already significant at the academic level [1], could generate a technological breakthrough in this field of electronics. Indeed, due to the weak van der Waals interlayer interactions, several materials can be assembled with a precise control of their thicknesses or their twist angles and with high quality interfaces.Recently, hybrid van der waals heterostructures, obtained by combining 2D materials and self-organized organic layers has been developed [2]. Such approach is promising to push further the versatility in terms of materials and thus a wide range of properties are expected.In this poster, we present recent results obtained on field effect transistor based on an hybrid van der Waals heterostructure made of molybdenum disulfide (MoS2) for the inorganic part and quinoidal zwitterions (QZ) for the organic part. The organic layer deposition is achieved under high vacuum, on top of the MoS2 channel of the transistor and the evolution of the transfer characteristic of the transistor is measured in situ.We observed a n-type doping and an increase of the charge carrier density of two orders of magnitudes which is comparable to the doping obtained with optimized charge transfer molecules [3][4]. These results which demonstrate the high compatibility of the QZ with MoS2 open the way for future investigations on functionalized hybrid QZ-2D materials heterostructures[1] A. K. Geim & I. V. Grigorieva Nature 499, 419–425 (2013)[2] Gobbi, M., Orgiu, E., Samorì, P., Adv. Mater. 2018, 30, 1706103.[3] Kiriya, D., Tosun, M., Zhao, P., Kang, J. S., & Javey, A. (2014). Air-Stable Surface Charge TransferDoping of MoS2 by Benzyl Viologen. Journal of the American Chemical Society, 136(22)[4] Dey, S., Matte, H. S. S. R., Shirodkar, S. N., Waghmare, U. V., & Rao, C. N. R. (2013). Charge-Transfer Interaction between Few-Layer MoS2and Tetrathiafulvalene. Chemistry - An Asian Journal,8(8

Probing the structure of single-walled carbon nanotubes by resonant Raman scattering

International audienceWe review the main information that we have obtained from combined Raman spectroscopy and electron diffraction experiments on individual free-standing single-walled carbon nanotubes. This information concerns: the radial breathing mode vs diameter relationship; the dependence of the frequency and lineshape of the G-modes in semiconducting and metallic tubes; the evaluation of the optical transition energies for individual free-standing SWNTs. From these data, we can define Raman criteria allowing the indexing of carbon nanotubes from their Raman features only. We show the efficiency of this approach to assign the (n,m) indices of individual chiral and achiral single-walled carbon nanotubes. These criteria are also applied to identify tubes grown on a substrate from a single wavelength Raman experiments. These results obtained on index-identified individual nanotubes are compared with theoretical prediction