A Memristor Model with Piecewise Window Function

In this paper, we present a memristor model with piecewise window function, which is continuously differentiable and consists of three nonlinear pieces. By introducing two parameters, the shape of this window function can be flexibly adjusted to model different types of memristors. Using this model, one can easily obtain an expression of memristance depending on charge, from which the numerical value of memristance can be readily calculated for any given charge, and eliminate the error occurring in the simulation of some existing window function models

Modeling the AgInSbTe Memristor

The AgInSbTe memristor shows gradual resistance tuning characteristics, which makes it a potential candidate to emulate biological plastic synapses. The working mechanism of the device is complex, and both intrinsic charge-trapping mechanism and extrinsic electrochemical metallization effect are confirmed in the AgInSbTe memristor. Mathematical model of the AgInSbTe memristor has not been given before. We propose the flux-voltage controlled memristor model. With piecewise linear approximation technique, we deliver the flux-voltage controlled memristor model of the AgInSbTe memristor based on the experiment data. Our model fits the data well. The flux-voltage controlled memristor model and the piecewise linear approximation method are also suitable for modeling other kinds of memristor devices based on experiment data

Modeling the Flux-Charge Relation of Memristor with Neural Network of Smooth Hinge Functions

The memristor was proposed to characterize the flux-charge relation. We propose the generalized flux-charge relation model of memristor with neural network of smooth hinge functions. There is effective identification algorithm for the neural network of smooth hinge functions. The representation capability of this model is theoretically guaranteed. Any functional flux-charge relation of a memristor can be approximated by the model. We also give application examples to show that the given model can approximate the flux-charge relation of existing piecewise linear memristor model, window function memristor model, and a physical memristor device

A Phone Learning Model for Enhancing Productivity of Visually Impaired Civil Servants

Phone-based learning in civil service is the use of voice technologies to deliver learning and capacity building training services to government employees. The Internet revolution and advancement in Information and Communications Technology (ICT) have given rise to online and remote staff training for the purpose of enhancing workers productivity. The need for civil servants in Nigeria to develop capacity that will enhance knowledge is a key requirement to having competitive advantage in the work place. Existing online learning platforms (such as web-based learning, mobile learning, etc) did not consider the plight of the visually impaired. These platforms provide graphical interfaces that require sight to access. The visually impaired civil servants require auditory access to functionalities that exist in learning management system on the Internet. Thus a gap exist between the able-bodied and visually impaired civil servants on accessibility to e-learning platform. The objective of this paper is to provide a personalized telephone learning model and a prototype application that will enhance the productivity of the visually impaired workers in Government establishments in Nigeria. The model was designed using Unified Modeling Language (UML) diagram. The prototype application was implemented and evaluated. With the proposed model and application, the visually and mobility impaired worker are able to participate in routine staff training and consequently enhances their productivity just like their able-bodied counterparts. The prototype application also serves as an alternative training platform for the able-bodied workers. Future research direction for this study will include biometric authentication of learners accessing the applicatio

Generalized linear isotherm regularity equation of state applied to metals

A three-parameter equation of state (EOS) without physically incorrect oscillations is proposed based on the generalized Lennard-Jones (GLJ) potential and the approach in developing linear isotherm regularity (LIR) EOS of Parsafar and Mason [J. Phys. Chem., 1994, 49, 3049]. The proposed (GLIR) EOS can include the LIR EOS therein as a special case. The three-parameter GLIR, Parsafar and Mason (PM) [Phys. Rev. B, 1994, 49, 3049], Shanker, Singh and Kushwah (SSK) [Physica B, 1997, 229, 419], Parsafar, Spohr and Patey (PSP) [J. Phys. Chem. B, 2009, 113, 11980], and reformulated PM and SSK EOSs are applied to 30 metallic solids within wide pressure ranges. It is shown that the PM, PMR and PSP EOSs for most solids, and the SSK and SSKR EOSs for several solids, have physically incorrect turning points, and pressure becomes negative at high enough pressure. The GLIR EOS is capable not only of overcoming the problem existing in other five EOSs where the pressure becomes negative at high pressure, but also gives results superior to other EOSs.Comment: 9 pages, 3 figure

ASAP : towards accurate, stable and accelerative penetrating-rank estimation on large graphs

Pervasive web applications increasingly require a measure of similarity among objects. Penetrating-Rank (P-Rank) has been one of the promising link-based similarity metrics as it provides a comprehensive way of jointly encoding both incoming and outgoing links into computation for emerging applications. In this paper, we investigate P-Rank efficiency problem that encompasses its accuracy, stability and computational time. (1) We provide an accuracy estimate for iteratively computing P-Rank. A symmetric problem is to find the iteration number K needed for achieving a given accuracy ε. (2) We also analyze the stability of P-Rank, by showing that small choices of the damping factors would make P-Rank more stable and well-conditioned. (3) For undirected graphs, we also explicitly characterize the P-Rank solution in terms of matrices. This results in a novel non-iterative algorithm, termed ASAP , for efficiently computing P-Rank, which improves the CPU time from O(n 4) to O( n 3 ). Using real and synthetic data, we empirically verify the effectiveness and efficiency of our approaches

Atomic Layering, Intermixing and Switching Mechanism in Ge-Sb-Te based Chalcogenide Superlattices.

GeSbTe-based chalcogenide superlattice (CSLs) phase-change memories consist of GeSbTe layer blocks separated by van der Waals bonding gaps. Recent high resolution electron microscopy found two types of disorder in CSLs, a chemical disorder within individual layers, and SbTe bilayer stacking faults connecting one block to an adjacent block which allows individual block heights to vary. The disorder requires a generalization of the previous switching models developed for CSL systems. Density functional calculations are used to describe the stability of various types of intra-layer disorder, how the block heights can vary by means of SbTe-based stacking faults and using a vacancy-mediated kink motion, and also to understand the nature of the switching process in more chemically disordered CSLs