2 research outputs found
Understanding the Origin of Formation and Active Sites for Thiomolybdate [Mo<sub>3</sub>S<sub>13</sub>]<sup>2–</sup> Clusters as Hydrogen Evolution Catalyst through the Selective Control of Sulfur Atoms
[Mo<sub>3</sub>S<sub>13</sub>]<sup>2–</sup> clusters have
become known as one of the most efficient catalysts for the hydrogen
evolution reaction (HER) because most of the sulfur (S) atoms in the
cluster are exposed, resulting in many active sites. However, the
origin of the cluster formation and active S sites in the cluster
is unknown, hindering the development of efficient catalysts. Herein,
the mechanism of the transition from amorphous MoS<sub>3</sub> to
[Mo<sub>3</sub>S<sub>13</sub>]<sup>2–</sup> clusters is systematically
investigated. In addition, the active S sites have been identified
by the selective removal of S atoms via low-temperature heat treatment.
In summary, we believe that the clusters grow from amorphous MoS<sub>3</sub> with apical S atoms, and bridging S atoms are the active
HER sites in the [Mo<sub>3</sub>S<sub>13</sub>]<sup>2–</sup> clusters. The clusters deposited on carbon nanotubes exhibited good
electrochemical HER activity with a low onset potential of −96
mV, a Tafel slope of 40 mV/decade, and stability for 1000 cycles
Defect-Assisted Heavily and Substitutionally Boron-Doped Thin Multiwalled Carbon Nanotubes Using High-Temperature Thermal Diffusion
Carbon nanotubes have shown great
potential as conductive fillers in various composites, macro-assembled
fibers, and transparent conductive films due to their superior electrical
conductivity. Here, we present an effective defect engineering strategy
for improving the intrinsic electrical conductivity of nanotube assemblies
by thermally incorporating a large number of boron atoms into substitutional
positions within the hexagonal framework of the tubes. It was confirmed
that the defects introduced after vacuum ultraviolet and nitrogen
plasma treatments facilitate the incorporation of a large number of
boron atoms (ca. 0.496 atomic %) occupying the trigonal sites on the
tube sidewalls during the boron doping process, thus eventually increasing
the electrical conductivity of the carbon nanotube film. Our approach
provides a potential solution for the industrial use of macro-structured
nanotube assemblies, where properties, such as high electrical conductance,
high transparency, and lightweight, are extremely important