Defect-Assisted
Heavily and Substitutionally Boron-Doped Thin Multiwalled Carbon Nanotubes
Using High-Temperature Thermal Diffusion
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Abstract
Carbon nanotubes have shown great
potential as conductive fillers in various composites, macro-assembled
fibers, and transparent conductive films due to their superior electrical
conductivity. Here, we present an effective defect engineering strategy
for improving the intrinsic electrical conductivity of nanotube assemblies
by thermally incorporating a large number of boron atoms into substitutional
positions within the hexagonal framework of the tubes. It was confirmed
that the defects introduced after vacuum ultraviolet and nitrogen
plasma treatments facilitate the incorporation of a large number of
boron atoms (ca. 0.496 atomic %) occupying the trigonal sites on the
tube sidewalls during the boron doping process, thus eventually increasing
the electrical conductivity of the carbon nanotube film. Our approach
provides a potential solution for the industrial use of macro-structured
nanotube assemblies, where properties, such as high electrical conductance,
high transparency, and lightweight, are extremely important